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MMBD354LT1G价格
参考价格:¥0.3202
型号:MMBD354LT1G 品牌:ONSemi 备注:这里有MMBD354LT1G多少钱,2026年最近7天走势,今日出价,今日竞价,MMBD354LT1G批发/采购报价,MMBD354LT1G行情走势销售排行榜,MMBD354LT1G报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MMBD354LT1G | Dual Hot Carrier Mixer Diodes Dual Hot Carrier Mixer Diodes These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra−fast switching circuits. Features •Very Low Capacitance −Less Than 1.0 pF @ Zero V •Low Forward Voltage −0.5 V (Typ) @ IF= 10 mA •P | ONSEMI 安森美半导体 | ||
MMBD354LT1G | 封装/外壳:TO-236-3,SC-59,SOT-23-3 包装:管件 描述:DIODE SCHOTTKY 7V 225MW SOT23-3 分立半导体产品 二极管 - 射频 | ONSEMI 安森美半导体 | ||
MMBD354LT1G | Dual Hot Carrier Mixer Diodes 文件:122.87 Kbytes Page:3 Pages | ONSEMI 安森美半导体 | ||
MMBD354LT1G | Dual Hot Carrier Mixer Diodes 文件:93.76 Kbytes Page:3 Pages | ONSEMI 安森美半导体 | ||
Dual Hot Carrier Mixer Diodes Dual Hot Carrier Mixer Diodes These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra–fast switching circuits. • Very Low Capacitance — Less Than 1.0 pF @ Zero Volts • Low Forward Voltage — 0.5 Volts (Typ) @ IF= 10 mA | Motorola 摩托罗拉 | |||
Dual Hot Carrier Mixer Diodes Dual Hot Carrier Mixer Diodes These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra−fast switching circuits. Features •Very Low Capacitance −Less Than 1.0 pF @ Zero V •Low Forward Voltage −0.5 V (Typ) @ IF= 10 mA •P | ONSEMI 安森美半导体 | |||
Dual Hot Carrier Mixer Diodes Dual Hot Carrier Mixer Diodes These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra–fast switching circuits. • Very Low Capacitance — Less Than 1.0 pF @ Zero Volts • Low Forward Voltage — 0.5 Volts (Typ) @ I F = 10 mA | LRC 乐山无线电 | |||
Dual Hot Carrier Mixer Diodes 文件:93.76 Kbytes Page:3 Pages | ONSEMI 安森美半导体 |
MMBD354LT1G产品属性
- 类型
描述
- 型号
MMBD354LT1G
- 功能描述
整流器 7V 225mW Dual Common Cathode
- RoHS
否
- 制造商
Vishay Semiconductors
- 产品
Standard Recovery Rectifiers
- 反向电压
100 V
- 恢复时间
1.2 us
- 正向连续电流
2 A
- 最大浪涌电流
35 A 反向电流
- IR
5 uA
- 安装风格
SMD/SMT
- 封装/箱体
DO-221AC
- 封装
Reel
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON(安森美) |
2511 |
TO-236-3,SC-59,SOT-23-3 |
4650 |
电子元器件采购降本 30%!公司原厂直采,砍掉中间差价 |
|||
三年内 |
1983 |
只做原装正品 |
|||||
ON |
24+ |
SOT-23 (TO-236) |
25000 |
ON全系列可订货 |
|||
ON/安森美 |
23+ |
SOT23 |
50000 |
全新原装正品现货,支持订货 |
|||
ON(安森美) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
ON/安森美 |
25+ |
电联咨询 |
7800 |
公司现货,提供拆样技术支持 |
|||
ON/安森美 |
2022+ |
6925 |
原厂原装,假一罚十 |
||||
ON |
24+ |
原厂封装 |
65250 |
支持样品,原装现货,提供技术支持! |
|||
ON(安森美) |
26+ |
NA |
60000 |
只有原装 可配单 |
|||
ON/安森美 |
2019+ |
SOT23 |
36000 |
原盒原包装 可BOM配套 |
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MMBD354LT1G规格书下载地址
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商品目录 结型场效应晶体管(JFET) 连续漏极电流(Id)(25°C 时) - 漏源电压(Vdss) - 栅源极阈值电压 - 漏源导通电阻 - 类型 N 沟道 最大功率耗散(Ta=25°C) 225mW
2020-11-12
DdatasheetPDF页码索引
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