丝印代码：89；High Conductance Low Leakage Diode

High Conductance Low Leakage Diode Sourced from Process 1T.

SURFACE MOUNT SWITCHING DIODES

Case : SOT-23 Molded Plastic Operating Temperature : -65°C to 150°C

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：散装 描述：DIODE ARRAY GP 30V 50MA SOT23-3 分立半导体产品 二极管 - 整流器 - 阵列

DIODE ARRAY GP 30V 50MA SOT23-3

高电导、低泄漏二极管

采用工艺1T设计

High Conductance Low Leakage Diode

High Conductance Low Leakage Diode

丝印代码：89A；High Conductance Low Leakage Diode

High Conductance Low Leakage Diode Sourced from Process 1T.

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR） 描述：DIODE ARRAY GP 30V 50MA SOT23-3 分立半导体产品 二极管 - 整流器 - 阵列

Integrated Circuit VCR Hall Switch

Description: This device operates with a small permanent magnet and provides switching operation by increasing or decreasing the magnetic flux density. The device features operation on alternate magnetic field and a wide range of operating temperature.

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for DC/DC Converters and power management application of notebook computers. FEATURES • Super low on-state resistance RDS(on)1 = 19.0 mΩ TYP. (VGS = 10 V, ID = 4.0 A) RDS(on)2 = 30.0 mΩ TYP. (VGS = 4.5 V, ID =

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for DC/DC Converters and power management application of notebook computers. FEATURES • Super low on-state resistance RDS(on)1 = 19.0 mΩ TYP. (VGS = 10 V, ID = 4.0 A) RDS(on)2 = 30.0 mΩ TYP. (VGS = 4.5 V, ID =

1.5/1.9GHz BAND FRONT-END GaAs MMIC

文件：564.26 Kbytes Page：26 Pages

High Speed Power Driver

文件：298.57 Kbytes Page：11 Pages