位置：首页 > IC中文资料 > MMBD110DWT1G
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
DualSchottkyBarrierDiodes DualSchottkyBarrierDiodes Applicationcircuitdesignsaremovingtowardtheconsolidationofdevicecountandintosmallerpackages.ThenewSOT–363packageisasolutionwhichsimplifiescircuitdesign,reducesdevicecount,andreducesboardspacebyputtingtwodiscretedevicesinonesmall | MotorolaMotorola, Inc 摩托罗拉加尔文制造公司 |  |   | |
DualSchottkyBarrierDiodes Applicationcircuitdesignsaremovingtowardtheconsolidationofdevicecountandintosmallerpackages.ThenewSOT−363packageisasolutionwhichsimplifiescircuitdesign,reducesdevicecount,andreducesboardspacebyputtingtwodiscretedevicesinonesmallsix−leadedpackage.TheSOT−3 | ONSEMION Semiconductor 安森美半导体安森美半导体公司 |  | | |
DualSchottkyBarrierDiodes Features ●ExtremelyLowMinorityCarrierLifetime ●VeryLowCapacitance ●LowReverseLeakage | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 |  | | |
DualSCHOTTKYBarrierDiodes Applicationcircuitdesignsaremovingtowardtheconsolidationofdevicecountandintosmallerpackages.ThenewSOT–363packageisasolutionwhichsimplifiescircuitdesign,reducesdevicecount,andreducesboardspacebyputtingtwodiscretedevicesinonesmallsix–leadedpackage.TheSOT–3 | LRCLeshan Radio Company 乐山无线电乐山无线电股份有限公司 |  | | |
DualSCHOTTKYBarrierDiodes 文件：414.6 Kbytes Page：4 Pages | ETLE-Tech Electronics LTD 亚历电子亚历电子有限公司 |  | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON/安森美 |
23+ |
NA |
42000 |
只做原装 |
|||
ON/安森美 |
22+ |
NA |
8435 |
可订货 请确认 |
|||
三年内 |
1983 |
只做原装正品 |
|||||
ONSemiconductor |
23+ |
SOT363 |
3000 |
全新原装假一赔十 |
|||
MOT |
97 |
3000 |
公司优势库存 热卖中!! |
||||
ONSemiconduc |
23+ |
SOT363 |
9526 |
||||
ON |
22+ |
NA |
2925 |
原装正品支持实单 |
|||
MOTOROLA/摩托罗拉 |
2450+ |
SOT-363 |
8850 |
只做原装正品假一赔十为客户做到零风险!! |
|||
ON/安森美 |
23+ |
NA |
25630 |
原装正品 |
|||
ON/安森美 |
21+ |
NA |
12820 |
只做原装,质量保证 |
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2020-11-12
DdatasheetPDF页码索引
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