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位置：首页 > IC中文资料 > MMBD101

MMBD101价格

参考价格：￥0.1710

型号：MMBD101LT1G 品牌：ON 备注：这里有MMBD101多少钱，2026年最近7天走势，今日出价，今日竞价，MMBD101批发/采购报价，MMBD101行情走势销售排行榜，MMBD101报价。
型号 功能描述 生产厂家 企业 LOGO 操作
MMBD101

SILICON SCHOTTKY BARRIER DIODES

Designed primarily for UHF mixer applications but suitable also for use in detector and ultra−fast switching circuits. Supplied in an inexpensive plastic package for low−cost, high−volume consumer requirements. Also available in Surface Mount package. Features • Low Noise Figure − 6.0 dB Typ @ 1

ONSEMI

安森美半导体

MMBD101

Schottky Barrier Diodes

Designed primarily for UHF mixer applications but suitable also for use in detector and ultra-fast switching circuits.Supplied in an inexpensive plastic package for low-cost,high-volume consumer requirements.Also available in Surface Mount package. • Low Noise Figure—6.0dB Typ@1.0GHz • Very Low

LRC

乐山无线电

MMBD101

Schottky Barrier Diodes

FEATURES ● Low noise figure -6.0dB @1.0GHz. ● Surface mount package ideally suited for automatic insertion. ● Very low capacitance –less than 1.0pF @zero volts. ● High forward conductance -0.5volts (typ.) @IF=10mA. ● MSL1. APPLICATIONS ● High speed switching.

BILIN

银河微电

MMBD101

Surface Mount Schottky Barrier Diode

Features Low Turn-on Voltage For UHF mixer application Also suitable for use in detector and ultra-fast switching circuits Low Noise Figure- 6.0dBTyp @ 1.0GHz Very Low Capacitance-Less Than 1.0pF @ 0V High Forward Conductance-0.5V(Typ) @ IF= 10mA

DAESAN

MMBD101

Schottky Barrier Diodes

Features ● Low Noise Figure-6.0dB Typ@1.0GHz ● Very Low Capacitance-Less Than 1.0pF@zero Volts ● High Forward Conductance-0.5volts(typ)@IF=10mA

KEXIN

科信电子

MMBD101

SURFACE MOUNT HIGH FREQUENCY SCHOTTKY DIODE

SURFACE MOUNT HIGH FREQUENCY SCHOTTKY DIODE VOLTAGE 7.0 Volts POWER 250mWatts FEATURES • Low Capacitance, Minimizing Insertion Losses in VHF Applications • Low VF : 0.5V (Typ) at IF = 10mA • Extremely Fast Switching Speed • In compliance with EU RoHS 2002/95/EC directives

PANJIT

強茂

MMBD101

SURFACE MOUNT SCHOTTKY BARRIER DIODE

Very Low Capacitance Low Noise Figure 6.0dB Typ. @ 1.0GHz PN Junction Guard Ring for Transient and ESD Protection For General Purpose Switching Applications Plastic Material – UL Recognition Flammability Classification 94V-0

WTE

Won-Top Electronics

MMBD101

Schottky Barrier Diode

Features ◇ Low noise figure -6.0dB @1.0GHz ◇ Surface mount package ideally suited for automatic insertion. ◇ Very low capacitance –less than 1.0pF @zero volts. ◇ High forward conductance -0.5volts (typ.) @IF=10mA. Applications ◇ High speed switching.

LUGUANG

鲁光电子

MMBD101

Schottky Barrier Diodes

FEATURES ● Low noise figure -6.0dB @1.0GHz ● Surface mount package ideally suited for automatic insertion. ● Very low capacitance –less than 1.0pF @zero volts. ● High forward conductance -0.5volts (typ.) @IF=10mA. APPLICATIONS ● High speed switching.

DSK

MMBD101

丝印代码：4M；Schottky Barrier Diode

文件：1.10316 Mbytes Page：2 Pages

LUGUANG

鲁光电子

MMBD101

SURFACE MOUNT HIGH FREQUENCY SCHOTTKY DIODE

文件：133.89 Kbytes Page：3 Pages

PANJIT

強茂

MMBD101

SURFACE MOUNT HIGH FREQUENCY SCHOTTKY DIODE

文件：84.98 Kbytes Page：3 Pages

PANJIT

強茂

MMBD101

Schottky Barrier Diodes

文件：203.09 Kbytes Page：3 Pages

BILIN

银河微电

MMBD1010LT1

Switching Diode

Part of the GreenLine™ Portfolio of devices with energy−conserving traits. This switching diode has the following features: • Very Low Leakage (≤ 500 pA) promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair contingent upon the other di

ONSEMI

安森美半导体

MMBD101L

7.0 V Low Noise Schottky Diode

The Schottky Diode is designed primarily for UHF mixer applications but suitable also for use in detector and ultra-fast switching circuits. This device is supplied in an inexpensive plastic package for low-cost, high-volume consumer requirements. It is also available in Surface Mount package. • Low Noise Figure - 6.0 dB Typ @ 1.0 GHz\n• High Forward Conductance - 0.5 Volts (Typ) @ IF = 10 mA\n• Pb-Free Packages are Available\n;

ONSEMI

安森美半导体

MMBD101LT1

Schottky Barrier Diodes

Designed primarily for UHF mixer applications but suitable also for use in detector and ultra-fast switching circuits.Supplied in an inexpensive plastic package for low-cost,high-volume consumer requirements.Also available in Surface Mount package. • Low Noise Figure—6.0dB Typ@1.0GHz • Very Low

LRC

乐山无线电

MMBD101LT1

SILICON SCHOTTKY BARRIER DIODES

Designed primarily for UHF mixer applications but suitable also for use in detector and ultra−fast switching circuits. Supplied in an inexpensive plastic package for low−cost, high−volume consumer requirements. Also available in Surface Mount package. Features • Low Noise Figure − 6.0 dB Typ @ 1

ONSEMI

安森美半导体

MMBD101LT1G

Schottky Barrier Diodes

Designed primarily for UHF mixer applications but suitable also for use in detector and ultra−fast switching circuits. Supplied in an inexpensive plastic package for low−cost, high−volume consumer requirements. Also available in Surface Mount package. Features • Low Noise Figure − 6.0 dB Typ @ 1

ONSEMI

安森美半导体

MMBD101-T1

SURFACE MOUNT SCHOTTKY BARRIER DIODE

Very Low Capacitance Low Noise Figure 6.0dB Typ. @ 1.0GHz PN Junction Guard Ring for Transient and ESD Protection For General Purpose Switching Applications Plastic Material – UL Recognition Flammability Classification 94V-0

WTE

Won-Top Electronics

MMBD101TS

SURFACE MOUNT HIGH FREQUENCY SCHOTTKY DIODE

FEATURES • Low Capacitance, Minimizing Insertion Losses in VHF Applications • Low Inductance, Small Lead-Length(SOD-523) Package • Low VF : 0.5V (Typ) at IF = 10mA • Extremely Fast Switching Speed • In compliance with EU RoHS 2002/95/EC directives

PANJIT

強茂

MMBD101W

SURFACE MOUNT HIGH FREQUENCY SCHOTTKY DIODE

FEATURES • Low Capacitance,Minimizing Insertion Losses in VHF Applications • Low VF : 0.5V (Typ) at IF=10mA • Extremely Fast Switching Speed • Pb free product are available : 99 Sn above can meet RoHS environment substance directive request

PANJIT

強茂

MMBD101WS

SURFACE MOUNT HIGH FREQUENCY SCHOTTKY DIODE

FEATURES • Low Capacitance, Minimizing Insertion Losses in VHF Applications • Low VF : 0.5V (Typ) at IF = 10mA • Extremely Fast Switching Speed • In compliance with EU RoHS 2002/95/EC directives

PANJIT

強茂

MMBD101_05

SURFACE MOUNT HIGH FREQUENCY SCHOTTKY DIODE

文件：84.98 Kbytes Page：3 Pages

PANJIT

強茂

MMBD101_07

SURFACE MOUNT HIGH FREQUENCY SCHOTTKY DIODE

文件：133.89 Kbytes Page：3 Pages

PANJIT

強茂

MMBD101_17

Schottky Barrier Diodes

文件：203.09 Kbytes Page：3 Pages

BILIN

银河微电

MMBD101_V01

Schottky Barrier Diode

文件：1.10316 Mbytes Page：2 Pages

LUGUANG

鲁光电子

MMBD1011

Surface Mount Switching Diode

文件：376.66 Kbytes Page：4 Pages

WEITRON

MMBD101LT1

Schottky Barrier Diodes

文件：65.08 Kbytes Page：4 Pages

ONSEMI

安森美半导体

MMBD101LT1

包装：散装 描述：DIODE SCHOTTKY 225MW 7V SOT23 分立半导体产品 二极管 - 整流器 - 阵列

ONSEMI

安森美半导体

MMBD101LT1G

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE SCHOTTKY 7V 225MW SOT23-3 分立半导体产品 二极管 - 射频

ONSEMI

安森美半导体

MMBD101LT1G

Schottky Barrier Diodes

文件：65.08 Kbytes Page：4 Pages

ONSEMI

安森美半导体

MMBD101TS

Small Signal Schottky

PANJIT

強茂

MMBD101WS

SURFACE MOUNT HIGH FREQUENCY SCHOTTKY DIODE

PANJIT

強茂

HER101

HIGH EFFICIENCY RECTIFIERS(1.0A,50-400V)

Switchmode Power Rectifiers HIGH EFFICIENCY RECTIFIERS 1.0 AMPERES 50 -- 400 VOLTS

MOSPEC

统懋

TIP101

DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS

DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60– 80– 100 VOLTS 80 WATTS . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain —hFE= 2500 (Typ) @ IC= 4.0 Adc • Collector–Emitter Sustaining Voltage — @ 30 mAdc

MOTOROLA

摩托罗拉

UPG101P

WIDE BAND AMPLIFIER CHIPS

DESCRIPTION PPG100P and PPG101P are GaAs integrated circuits designed as wide band amplifiers. Both devices are available in chip form. PPG100P is low noise amplifier from 50 MHz to 3 GHz and PPG101P is a medium power amplifier in the same frequency band. These devices are most suitable for the

NEC

瑞萨

LM101A

Operational Amplifiers

文件：509.25 Kbytes Page：17 Pages

NSC

国半

LM101AH

Operational Amplifiers

文件：509.25 Kbytes Page：17 Pages

NSC

国半

MMBD101产品属性

  • 类型

    描述

  • Pb-free：

    Pb

  • Halide free：

    H

  • Status：

    Active

  • Type：

    RF-SBD

  • Configuration：

    Single

  • VR Min (V)：

    7

  • VF Max (V)：

    0.6

  • IR Max (µA)：

    0.25

  • Cj (pF)：

    1

  • Package Type：

    SOT-23-3

MMBD101供应商更多...

更新时间：2026-8-3 23:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市得捷芯城科技有限公司
MMBD101LT1G
onsemi(安森美)
25+
SOT-23-3L
22412
正规渠道,免费送样。支持账期,BOM一站式配齐
询价
深圳市高捷芯城科技有限公司
MMBD101LT1G
ON(安森美)
24+
标准封装
7248
全新原装正品/价格优惠/质量保障
询价
上海意淼电子科技有限公司
MMBD101LT1
ON
23+
SOT23
20000
全新原装假一赔十
询价
深圳市联世界科技有限公司
MMBD101LT1G
ON
24+/25+
1410
原装正品现货库存价优
询价
深圳市益百分电子有限公司
MMBD101LT1
ON
02+
SOT23
2200
全新原装进口自己库存优势
询价
深圳市纳立科技有限公司
MMBD101LT1G
三年内
1983
只做原装正品
询价
深圳市富利微电子科技有限公司
MMBD101LT1G
ON/安森美
26+
SOT-23(SOT-23-3)
30000
原装正品公司现货,假一赔十!
询价
深圳市正纳电子有限公司
MMBD101LT1G
ON(安森美)
26+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
询价
深圳市芯球通科技有限公司
MMBD101LT1G
ON(安森美)
23+
SOT-23(SOT-23-3)
15150
公司只做原装正品,假一赔十
询价
深圳市亿联芯电子科技有限公司
MMBD101LT1G
ON/安森美
26+
SOT23
1450
原厂全新正品旗舰店优势现货
询价

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