位置:首页 > IC中文资料第181页 > MMBD1010LT1
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MMBD1010LT1 | Switching Diode Part of the GreenLine™ Portfolio of devices with energy−conserving traits. This switching diode has the following features: • Very Low Leakage (≤ 500 pA) promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair contingent upon the other di | ONSEMI 安森美半导体 | ||
MMBD1010LT1 | Switching Diode | ONSEMI 安森美半导体 | ||
PNP GENERAL PURPOSE DRIVER TRANSISTORS SURFACE MOUNT Low Saturation Voltage PNP Silicon Driver Transistors Part of the GreenLine™ Portfolio of devices with energy–conserving traits. This PNP Silicon Epitaxial Planar Transistor is designed to conserve energy in general purpose driver applications. This device is housed in the SOT-23 and SC–59 pack | MOTOROLA 摩托罗拉 | |||
Low Saturation Voltage PNP Silicon Driver Transistors Part of the GreenLineTM Portfolio of devices with energy–conserving traits. This PNP Silicon Epitaxial Planar Transistor is designed to conserve energy in general purpose driver applications. This device is housed in the SOT-23 and SC–59 packages which are designed | LRC 乐山无线电 | |||
PNP GENERAL PURPOSE DRIVER TRANSISTORS SURFACE MOUNT Low Saturation Voltage PNP Silicon Driver Transistors Part of the GreenLine Portfolio of devices with energy–conserving traits. This PNP Silicon Epitaxial Planar Transistor is designed to conserve energy in general purpose driver applications. This device is housed in the SOT-23 and SC–59 packa | ONSEMI 安森美半导体 | |||
Low Saturation Voltage 文件:118.71 Kbytes Page:1 Pages | ETL 亚历电子 |
MMBD1010LT1产品属性
- 类型
描述
- 型号
MMBD1010LT1
- 制造商
Rochester Electronics LLC
- 功能描述
- Tape and Reel
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MOT |
25+ |
1380 |
公司优势库存 热卖中!! |
||||
ON |
9129+ |
SOT23 |
2070 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
ON/安森美 |
23+ |
SOT-23 |
24190 |
原装正品代理渠道价格优势 |
|||
ON |
24+ |
SOT-23 |
5000 |
公司存货 |
|||
ON |
26+ |
Sot-163 |
86720 |
全新原装正品价格最实惠 承诺假一赔百 |
|||
ON(安森美) |
23+ |
标准封装 |
5000 |
原厂原装现货订货价格优势终端BOM表可配单提供样品 |
|||
ON |
1708+ |
? |
7500 |
只做原装进口,假一罚十 |
|||
三年内 |
1983 |
只做原装正品 |
|||||
ON |
22+ |
SOT23 |
20000 |
公司只做原装 品质保障 |
|||
ON/安森美 |
2447 |
SOT-23 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
MMBD1010LT1规格书下载地址
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商品目录 结型场效应晶体管(JFET) 连续漏极电流(Id)(25°C 时) - 漏源电压(Vdss) - 栅源极阈值电压 - 漏源导通电阻 - 类型 N 沟道 最大功率耗散(Ta=25°C) 225mW
2020-11-12
DdatasheetPDF页码索引
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