Radiation Hardened Low-Side GaN FET Driver

Features • Wide operating voltage range of 4.5V to 13.2V • Up to 14.7V logic inputs (regardless of VDD level) • Inverting and non-inverting inputs • Optimized to drive enhancement mode GaN FETs • Internal 4.5V regulated gate drive voltage • Independent outputs for adjustable turn-on/turn-of

Radiation Hardened Low-Side GaN FET Driver

Features • Wide operating voltage range of 4.5V to 13.2V • Up to 14.7V logic inputs (regardless of VDD level) • Inverting and non-inverting inputs • Optimized to drive enhancement mode GaN FETs • Internal 4.5V regulated gate drive voltage • Independent outputs for adjustable turn-on/turn-of

Radiation Hardened Low-Side GaN FET Driver

Features • Wide operating voltage range of 4.5V to 13.2V • Up to 14.7V logic inputs (regardless of VDD level) • Inverting and non-inverting inputs • Optimized to drive enhancement mode GaN FETs • Internal 4.5V regulated gate drive voltage • Independent outputs for adjustable turn-on/turn-of

Radiation Hardened Low-Side GaN FET Driver

Features • Wide operating voltage range of 4.5V to 13.2V • Up to 14.7V logic inputs (regardless of VDD level) • Inverting and non-inverting inputs • Optimized to drive enhancement mode GaN FETs • Internal 4.5V regulated gate drive voltage • Independent outputs for adjustable turn-on/turn-of

Accessory Kit for Modular & Microline Passive Oscilloscope Probes

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