丝印代码：2727SL；LOW COST 27 MHZ VCXO

Features • Packaged in 8-pin narrow SOIC • Uses an inexpensive 13.500 MHz external crystal • On-chip VCXO with pull range of 200 ppm (minimum) • VCXO input tuning voltage 0 to 3.3 V • 25 mA output drive capability at TTL levels • Advanced, low-power, sub-micron CMOS process • 5 V operating

封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：管件 描述：IC VCXO/PLL CLK SYNTHESIZR 8SOIC 集成电路（IC） 时钟发生器，PLL，频率合成器

丝印代码：2727SL；LOW COST 27 MHZ VCXO

Features • Packaged in 8-pin narrow SOIC • Uses an inexpensive 13.500 MHz external crystal • On-chip VCXO with pull range of 200 ppm (minimum) • VCXO input tuning voltage 0 to 3.3 V • 25 mA output drive capability at TTL levels • Advanced, low-power, sub-micron CMOS process • 5 V operating

封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：管件 描述：IC VCXO/PLL CLK SYNTHESIZR 8SOIC 集成电路（IC） 时钟发生器，PLL，频率合成器

Silicon Diffused Power Transistor

GENERAL DESCRIPTION High voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of high resolution monitors, suitable for operation up to 64 kHz. Designed to withstand VCES pulses up to 1700V.

Silicon Diffused Power Transistor

GENERAL DESCRIPTION High voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Designed to withstand VCES pulses up to 1700V.

Silicon Diffused Power Transistor

GENERAL DESCRIPTION High voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of high resolution monitors, suitable for operation up to 64 kHz. Designed to withstand VCES pulses up to 1700V.

Silicon Diffused Power Transistor

GENERAL DESCRIPTION High voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Designed to withstand VCES pulses up to 1700V.

N-Channel FET Synchronous Buck Regulator Controller for Low Output Voltages

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