Silicon Diffused Power Transistor

GENERAL DESCRIPTION High voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of high resolution monitors, suitable for operation up to 64 kHz. Designed to withstand VCES pulses up to 1700V.

isc Silicon NPN Power Transistor

DESCRIPTION • Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 825V (Min) • High Switching Speed • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Designed for use in horizontal deflection circuits of color TV receivers.

Silicon NPN Power Transistors

DESCRIPTION • With TO-247 package • High voltage • High speed switching APPLICATIONS • For use in horizontal deflection circuits of high resolution monitors

Silicon NPN Power Transistors

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isc Silicon NPN Power Transistor

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isc Silicon NPN Power Transistor

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TRANSPARENT BLUE NEMA ENCLOSURE

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