LOW EMI CLOCK GENERATOR

Features • Packaged in 8-pin SOIC (MK1709S) and in 8-pin TSSOP (MK1709AG) • Pb-free package • Provides a spread spectrum output clock • Supports flat panel controllers • Guaranteed to +85° C operation • Accepts a clock input, provides same frequency dithered output • Good for all VGA mode

Low EMI Clock Generator

Description The MK1709 generates a low EMI output clock from a clock input. The part is designed to dither the LCD interface clock for flat panel graphics controllers. The device uses ICS’ proprietary mix of analog and digital Phase Locked Loop (PLL) technology to spread the frequency spectrum of

封装/外壳：8-TSSOP（0.173"，4.40mm 宽） 包装：管件 描述：IC CLK GENERATOR LOW EMI 8-TSSOP 集成电路（IC） 时钟发生器，PLL，频率合成器

Low EMI Clock Generator

Description The MK1709 generates a low EMI output clock from a clock input. The part is designed to dither the LCD interface clock for flat panel graphics controllers. The device uses ICS’ proprietary mix of analog and digital Phase Locked Loop (PLL) technology to spread the frequency spectrum of

LOW EMI CLOCK GENERATOR

Features • Packaged in 8-pin SOIC (MK1709S) and in 8-pin TSSOP (MK1709AG) • Pb-free package • Provides a spread spectrum output clock • Supports flat panel controllers • Guaranteed to +85° C operation • Accepts a clock input, provides same frequency dithered output • Good for all VGA mode

封装/外壳：8-TSSOP（0.173"，4.40mm 宽） 包装：卷带（TR） 描述：IC CLK GENERATOR LOW EMI 8-TSSOP 集成电路（IC） 时钟发生器，PLL，频率合成器

PRE-DRIVER FOR ULTRA-HIGH RESOLUTION COMPUTER DISPLAY

Description The CXA1709P is a bipolar IC designed for use in ultra-high resolution computer displays.

Integrated Circuit Dual Balanced Modulator for Video Cameras

Description: The NTE1709 is an integrated circuit in a 9–Lead SIP type package that incorporates two balanced modulators Features: • Dual Balanced Modulator • No External Bias Circuit Required • Carrier Suppression: 40dB Typ

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for DC/DC converters and power management switch. FEATURES • Low on-resistance RDS(on)1 = 9.3 mΩ (TYP.) (VGS = 10 V, ID = 4.5 A) RDS(on)2 = 13.8 mΩ (TYP.) (VGS = 4.5 V, ID = 4.5 A) • Low Ciss : Ciss = 1850 pF

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for DC/DC converters and power management switch. FEATURES • Low on-resistance RDS(on)1 = 9.3 mΩ (TYP.) (VGS = 10 V, ID = 4.5 A) RDS(on)2 = 13.8 mΩ (TYP.) (VGS = 4.5 V, ID = 4.5 A) • Low Ciss : Ciss = 1850 pF

DUAL HIGH-SPEED FET DRIVER

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