Silicon Power Transistors

The MJW21193 and MJW21194 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. Features  Total Harmonic Distortion Characterized  High DC Current Gain  Excellent Gain Linearity  High SOA  These

封装/外壳：TO-247-3 包装：散装 描述：TRANS NPN 250V 16A TO247-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Silicon Power Transistors

文件：151.04 Kbytes Page：7 Pages

16 A COMPLEMENTARY SILICON POWER TRANSISTORS 250 V, 200 W

文件：74.05 Kbytes Page：8 Pages

Silicon Power Transistors

文件：124.88 Kbytes Page：7 Pages

isc Silicon NPN Power Transistor

DESCRIPTION • Total Harmonic Distortion Characterized • High DC Current Gain • High Area of Safe Operation APPLICATIONS • Designed for high power audio output, disk head positioners and linear applications.

COMPLEMENTARY SILICON POWER TRANSISTORS

Silicon Power Transistors The MJ21193 (PNP) and MJ21194 (NPN) utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. Features • Total Harmonic Distortion Characterized • High DC Current Gain − hFE= 25 Mi

Silicon NPN Power Transistors

DESCRIPTION • With TO-3 package • Complement to type MJ21193 • Excellent gain linearity APPLICATIONS • Designed for high power audio output,disk head positioners and linear applications

Silicon Power Transistors

文件：163.56 Kbytes Page：6 Pages

Silicon Power Transistors

文件：73.54 Kbytes Page：6 Pages