位置：首页 > IC中文资料第1211页 > MJW21193
MJW21193价格
参考价格：￥13.5343
型号：MJW21193G 品牌：ONSemi 备注：这里有MJW21193多少钱，2026年最近7天走势，今日出价，今日竞价，MJW21193批发/采购报价，MJW21193行情走势销售排行榜，MJW21193报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MJW21193 | Silicon Power Transistors 16 A COMPLEMENTARY SILICON POWER TRANSISTORS 250 V, 200 W MJW21193 (PNP) MJW21194 (NPN) The MJW21193 and MJW21194 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. •Total Harmonic Distor | ONSEMI 安森美半导体 |   | |
MJW21193 | Silicon Power Transistors The MJW21193 and MJW21194 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. Features Total Harmonic Distortion Characterized High DC Current Gain Excellent Gain Linearity High SOA These | ONSEMI 安森美半导体 | | |
MJW21193 | Silicon Power Transistors 文件：124.88 Kbytes Page：7 Pages | ONSEMI 安森美半导体 | | |
MJW21193 | Silicon PNP transistor in a TO-3P Plastic Package. 文件：958.04 Kbytes Page：6 Pages | FOSHAN 蓝箭电子 | | |
MJW21193 | isc Silicon PNP Power Transistor 文件：279.26 Kbytes Page：2 Pages | ISC 无锡固电 | | |
MJW21193 | Silicon Power Transistors 文件：151.04 Kbytes Page：7 Pages | ONSEMI 安森美半导体 | | |
MJW21193 | 16 A COMPLEMENTARY SILICON POWER TRANSISTORS 250 V, 200 W 文件：74.05 Kbytes Page：8 Pages | ONSEMI 安森美半导体 | | |
MJW21193 | 封装/外壳：TO-247-3 包装：散装 描述：TRANS PNP 250V 16A TO247-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ONSEMI 安森美半导体 | | |
MJW21193 | 音频功放晶体管 | THUNDERSOFT 中科创达 | | |
MJW21193 | 音频三极管 | FOSHAN 蓝箭电子 | | |
MJW21193 | 双极晶体管，PNP，250 V，16 A | ONSEMI 安森美半导体 | | |
Silicon Power Transistors The MJW21193 and MJW21194 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. Features Total Harmonic Distortion Characterized High DC Current Gain Excellent Gain Linearity High SOA These | ONSEMI 安森美半导体 | | ||
Silicon Power Transistors The MJW21193 and MJW21194 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. Features Total Harmonic Distortion Characterized High DC Current Gain Excellent Gain Linearity High SOA These | ONSEMI 安森美半导体 | | ||
16 A COMPLEMENTARY SILICON POWER TRANSISTORS 250 V, 200 W 文件：74.05 Kbytes Page：8 Pages | ONSEMI 安森美半导体 | | ||
Silicon Power Transistors 文件：151.04 Kbytes Page：7 Pages | ONSEMI 安森美半导体 | | ||
Silicon Power Transistors 文件：124.88 Kbytes Page：7 Pages | ONSEMI 安森美半导体 | | ||
Silicon Power Transistors 文件：124.88 Kbytes Page：7 Pages | ONSEMI 安森美半导体 | | ||
Silicon Power Transistors 文件：151.04 Kbytes Page：7 Pages | ONSEMI 安森美半导体 | | ||
16 A COMPLEMENTARY SILICON POWER TRANSISTORS 250 V, 200 W 文件：74.05 Kbytes Page：8 Pages | ONSEMI 安森美半导体 | | ||
封装/外壳：TO-247-3 包装：散装 描述：TRANS PNP 250V 16A TO247-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ONSEMI 安森美半导体 | | ||
16 ampere complementary silicon power transistors 250 volts 250 watts Silicon Power Transistors The MJ21193 and MJ21194 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. • Total Harmonic Distortion Characterized • High DC Current Gain – hFE = 25 Min @ IC = 8 Adc • Excel | MOTOROLA 摩托罗拉 | | ||
COMPLEMENTARY SILICON POWER TRANSISTORS Silicon Power Transistors The MJ21193 (PNP) and MJ21194 (NPN) utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. Features • Total Harmonic Distortion Characterized • High DC Current Gain − hFE= 25 Mi | ONSEMI 安森美半导体 | | ||
Silicon PNP Power Transistors DESCRIPTION • With TO-3 package • Complement to type MJ21194 • Excellent gain linearity APPLICATIONS • Designed for high power audio output,disk head positioners and linear applications | SAVANTIC | | ||
Silicon Power Transistors 文件：122.36 Kbytes Page：6 Pages | ONSEMI 安森美半导体 | | ||
Silicon Power Transistors 文件：73.54 Kbytes Page：6 Pages | ONSEMI 安森美半导体 | |
MJW21193产品属性
- 类型
描述
- 型号
MJW21193
- 功能描述
两极晶体管 - BJT 16A 250V 200W PNP
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
PNP 集电极—基极电压
- VCBO
集电极—发射极最大电压
- VCEO
- 40 V 发射极 - 基极电压
- VEBO
- 6 V
- 增益带宽产品fT
直流集电极/Base Gain hfe
- Min
100 A
- 安装风格
SMD/SMT
- 封装/箱体
PowerFLAT 2 x 2
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON |
22+ |
TO-3P |
3000 |
原装正品,支持实单 |
|||
ON/安森美 |
21+ |
TO-247-3 |
8080 |
只做原装,质量保证 |
|||
ON/安森美 |
25+ |
TO-247-3 |
30000 |
原装正品公司现货,假一赔十! |
|||
ON/安森美 |
25+ |
TO-247 |
860000 |
明嘉莱只做原装正品现货 |
|||
ON |
24+ |
TO-247 |
8866 |
||||
ON(安森美) |
23+ |
标准封装 |
5000 |
原厂原装现货订货价格优势终端BOM表可配单提供样品 |
|||
ON |
1716+ |
? |
7500 |
只做原装进口,假一罚十 |
|||
三年内 |
1983 |
只做原装正品 |
|||||
ON(安森美) |
2447 |
TO-247-3 |
105000 |
30个/管一级代理专营品牌!原装正品,优势现货,长期 |
|||
ON/安森美 |
22+ |
TO-247-2 |
20000 |
公司只有原装 品质保障 |
MJW21193规格书下载地址
MJW21193参数引脚图相关
- nrf24l01
- nfc芯片
- NFC
- ne555定时器
- ne555
- nand闪存
- n74
- n100
- mxt
- murata
- mt7201
- mt6795
- msm8625q
- msm7227a
- MP4
- MP3
- mos晶体管
- mos管
- MOSFET
- molex连接器
- MK-070R
- MK06S
- MK063
- MK042
- MK03-1A66D-500W
- MK03-1A66C-500W
- MK03-1A66B-500W
- MK02FN128VLH10
- MK02FN128VFM10
- MK-0270
- MK0260
- MK02275R6BATA
- MK02275R6BAT2A
- MK02272R2BAT2A
- MK0227100FAT2A
- MK02/0-1B90-500W
- MK02/0-1A66-500W
- MK01-K
- MK01-I
- MK01-H
- MK01-E
- MK01-D
- MK01-C
- MK01-B
- MK-0150
- MJZ8180GML
- MJWI25
- MJWI20
- MJWI15
- MJWI10
- MJWI06C
- MJW3281AG
- MJW25
- MJW21196G
- MJW21195G
- MJW21194G
- MJW21193G
- MJW18020G
- MJW15
- MJW1302AG
- MJW10
- MJTPSMW-TR
- MJTPSMWTR
- MJTPSMWBTR
- MJTPSMWB
- MJTPSMW
- MJTPSJW69NTR
- MJTPSJW69N
- MJTPSJW66NTR
- MJTPSJW66N
- MJTPSHWB
- MJTPSHWA
- MJTP2205D
- MJTP2205B
- MJTP2205A
- MJTP1250
- MJTP1243
- MJTP1236G
- MJTP1236F
- MJT5050
- MJS7-R
- MJS750
- MJS700
- MJS6-R
- MJS5-R
- MJS500
- MJS4-R
- MJS400
- MJS3-R
- MJS350
- MJS3.5
- MJS2-R
- MJS250
- MJS22R
- MJS22
- MJS200
- MJS2.5
MJW21193数据表相关新闻
MJL1302A坚持十多年只做原装
MJL1302A坚持十多年只做原装
2025-1-21MK10DN512VLK10R
进口代理
2022-9-19MJL21195G
MJL21195G
2021-10-22MK10DN512VLK10
MK10DN512VLK10
2021-3-16MK10DN32VLF5
类别 集成电路（IC） 嵌入式 - 微控制器 制造商 NXP USA Inc. 系列 Kinetis K10 包装 托盘 零件状态 有源 核心处理器 ARM? Cortex?-M4 内核规格 32-位 速度 50MHz 连接能力 I2C，IrDA，SPI，UART/USART 外设 DMA，I2S，LVD，POR，PWM，WDT 程序存储容量 32KB（32K x 8） 程
2021-3-5MJE802G，MJE702G，只售原装货，片片来自原产，一级代理销售
MJE802G，MJE702G，只售原装货，片片来自原产，一级代理销售
2019-11-30
DdatasheetPDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80
- P81
- P82
- P83
- P84
- P85
- P86
- P87
- P88
- P89
- P90
- P91
- P92
- P93
- P94
- P95
- P96
- P97
- P98
- P99
- P100
- P101
- P102
- P103
- P104
- P105
- P106
- P107
- P108
