型号 功能描述 生产厂家&企业 LOGO 操作
MJW21191

8.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON 150 VOLTS 100 WATTS

Specifically designed for power audio output, or high power drivers in audio amplifiers. • DC Current Gain Specified up to 8.0 Amperes at Temperature • All On Characteristics at Temperature • High SOA: 20 A, 18 V, 100 ms • TO–247AE Package

Motorola

摩托罗拉

MJW21191

POWER TRANSISTORS COMPLEMENTARY SILICON

Specifically designed for power audio output, or high power drivers in audio amplifiers. • DC Current Gain Specified up to 8.0 A at Temperature • All On Characteristics at Temperature • High SOA: 20 A, 18 V, 100 ms • TO−247AE Package • Pb−Free Packages are Available*

ONSEMI

安森美半导体

MJW21191

Silicon PNP Power Transistors

DESCRIPTION • With TO-247 package • Complement to type MJW21192 • Wild area of safe operation APPLICATIONS • Designed for power audio output, high power drivers in audio amplifiers

SAVANTIC

MJW21191

isc Silicon PNP Power Transistor

DESCRIPTION • DC Current Gain • High Area of Safe Operation APPLICATIONS • Designed for power audio output, or high power drivers in audio amplifiers.

ISC

无锡固电

MJW21191

Silicon PNP Power Transistor

DESCRIPTION • DC Current Gain Specified up to 8.0 at Temperature • High SOA: 20 A, 18 V, 100 ms • TO−3PN Package • Complement to Type MJW21192 APPLICATIONS • designed for power audio output, or high power drivers in audio amplifiers applications

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

MJW21191

封装/外壳:TO-247-3 包装:托盘 描述:TRANS PNP 150V 8A TO247-3 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ONSEMI

安森美半导体

MJW21191

8.0 A POWER TRANSISTORS COMPLEMENTARY SILICON 150 V, 125 W

文件:73.63 Kbytes Page:6 Pages

ONSEMI

安森美半导体

MJW21191

Silicon NPN Power Transistors

文件:120.62 Kbytes Page:3 Pages

SAVANTIC

8.0 A POWER TRANSISTORS COMPLEMENTARY SILICON 150 V, 125 W

文件:73.63 Kbytes Page:6 Pages

ONSEMI

安森美半导体

封装/外壳:TO-247-3 包装:托盘 描述:TRANS PNP 150V 8A TO247-3 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ONSEMI

安森美半导体

MJW21191产品属性

  • 类型

    描述

  • 型号

    MJW21191

  • 功能描述

    两极晶体管 - BJT 8A 150V 100W PNP

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    PNP 集电极—基极电压

  • VCBO

    集电极—发射极最大电压

  • VCEO

    - 40 V 发射极 - 基极电压

  • VEBO

    - 6 V

  • 增益带宽产品fT

    直流集电极/Base Gain hfe

  • Min

    100 A

  • 安装风格

    SMD/SMT

  • 封装/箱体

    PowerFLAT 2 x 2

更新时间:2025-8-7 11:20:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ON(安森美)
2511
4945
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价
ON/安森美
23+
TO-3P
13000
原厂授权一级代理,专业海外优势订货,价格优势、品种
ON(安森美)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
ON(安森美)
23+
标准封装
5000
原厂原装现货订货价格优势终端BOM表可配单提供样品
ON
23+
2800
正品原装货价格低
ONSEMI/安森美
24+
TO-3P
7800
全新原厂原装正品现货,低价出售,实单可谈
ON
2025+
TO-3P
3785
全新原厂原装产品、公司现货销售
ON
22+
TO-3P
3000
原装正品,支持实单
ON/安森美
22+
TO-3P
6000
十年配单,只做原装
24+
8866

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