COMPLEMENTARY SILICON POWER TRANSISTORS

16 A COMPLEMENTARY SILICON POWER TRANSISTORS 250 V, 200 W The MJL21195 and MJL21196 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. •Total Harmonic Distortion Characterized •High DC Cur

Bipolar Transistor, NPN, 250 V, 16 A

The MJL21195 and MJL21196 Bipolar Complementary Audio Power Transistors utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. • Total Harmonic Distortion Characterized\n• High DC Current Gain - hFE = 25 Min @ IC = 8 Adc\n• Excellent Gain Linearity\n• High SOA: 2.25 A, 80 V, 1 Second;

16 A COMPLEMENTARY SILICON POWER TRANSISTORS 250 V, 200 W

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Silicon Power Transistors

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Silicon Power Transistors

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isc Silicon NPN Power Transistor

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封装/外壳：TO-264-3，TO-264AA 包装：散装 描述：TRANS NPN 250V 16A TO264 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

音频功放晶体管

音频功放晶体管

200 Watt Silicon Epitaxial Planar NPN Type Power Transistor

DESCRIPTION ·With TO-3PL-SQ(TO-3PBL/TO-3BPL) pkg ·Complement to type MJL21195A APPLICATIONS ·Power amplifier applications ·Recommended for 100W high fidelity audio frequency amplifier output stage

200 Watt Silicon Epitaxial Planar NPN Type Power Transistor

DESCRIPTION ·With TO-3PL-SQ(TO-3PBL/TO-3BPL) pkg ·Complement to type MJL21195G APPLICATIONS ·Power amplifier applications ·Recommended for 100W high fidelity audio frequency amplifier output stage

Silicon Power Transistors

文件：132.52 Kbytes Page：6 Pages

封装/外壳：TO-264-3，TO-264AA 包装：散装 描述：TRANS NPN 250V 16A TO264 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Silicon Power Transistors

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16 A COMPLEMENTARY SILICON POWER TRANSISTORS 250 V, 200 W

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COMPLEMENTARY SILICON POWER TRANSISTORS

Silicon Power Transistors The MJ21195 and MJ21196 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. Features • Total Harmonic Distortion Characterized • High DC Current Gain − hFE = 25 Min @ IC = 8 Ad

Silicon Power Transistors

MJW21195 (PNP) MJW21196 (NPN) The MJW21195 and MJW21196 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. Features •Total Harmonic Distortion Characterized •High DC Current Gain −hFE= 2

16 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS, 200 WATTS

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