TRIPLE DIFFUSED NPN TRANSISTOR

HIGH VOLTAGE HIGH SPEED POWER SWITCH APPLICATION. • Built-in Free wheeling Diode makes efficient anti saturation operation. • Suitable for half bridge light ballast Applications. • Low base drive requirement.

Silicon NPN Power Transistor

DESCRIPTION • High Voltage Capability • High Speed Switching • Wide Area of Safe Operation APPLICATIONS • Fluorescent lamp • Electronic ballast • Electronic transformer • Switch mode power supply

Switching Transistor, TO-220AB, 400V, 5A

• Low Leakage Current\n• Low Saturation Voltage\n• Suitable for using Switching application;

丝印代码：D-PAK；TRANSISTOR (NPN)

TRANSISTOR (NPN) SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE SWITCHING APPLICATION. HIGH SPEED DC-DC CONVERTER APPLICATION. FLUORESCENT LIGHT BALLASTOR APPLICATION. FEATURES High Collector Voltage : V CBO =700V.

NPN D SERIES TRANSISTORS

● FEATURES： ■ HIGH VOLTAGE CAPABILITY ■ HIGH SPEED SWITCHING ■ WIDE SOA ■ RoHS COMPLIANT ● APPLICATION: ■ FLUORESCENT LAMP ■ ELECTRONIC BALLAST ■ ELECTRONIC TRANSFORMER ■ SWITCH MODE POWER SUPPLY

Bipolar Transistor

The UTC MJE13005D is a high voltage fast-switching NPN power transistor. It is characterized by high breakdown voltage, high current capability, high switching speed and high reliability.   The UTC MJE13005D is intended to be used in energy-saving light, electronic ballast, high frequency switching • High Breakdown Voltage \n• High Current Capability \n• High Switching Speed \n• High Reliability \n• RoHS-Compliant Product;

TRANSISTOR:Genreal Purpuse

TRIPLE DIFFUSED NPN TRANSISTOR

文件：67.73 Kbytes Page：4 Pages

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

文件：108.06 Kbytes Page：3 Pages

TRIPLE DIFFUSED NPN TRANSISTOR

HIGH VOLTAGE HIGH SPEED POWER SWITCH APPLICATION. • Built-in Free wheeling Diode makes efficient anti saturation operation. • Suitable for half bridge light ballast Applications. • Low base drive requirement.

TRIPLE DIFFUSED NPN TRANSISTOR

HIGH VOLTAGE HIGH SPEED POWER SWITCH APPLICATION. • Built-in Free wheeling Diode makes efficient anti saturation operation. • Suitable for half bridge light ballast Applications. • Low base drive requirement.

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The UTC MJE13005D-Kis a high voltage fast-switching NPN power transistor. It is characterized by high breakdown voltage, high current capability, high switching speed and high reliability. The UTC MJE13005D-Kis intended to be used in energy-saving light, electronic ballast, high fre

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The UTC MJE13005D-Kis a high voltage fast-switching NPN power transistor. It is characterized by high breakdown voltage, high current capability, high switching speed and high reliability. The UTC MJE13005D-Kis intended to be used in energy-saving light, electronic ballast, high fre

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The UTC MJE13005D-Kis a high voltage fast-switching NPN power transistor. It is characterized by high breakdown voltage, high current capability, high switching speed and high reliability. The UTC MJE13005D-Kis intended to be used in energy-saving light, electronic ballast, high fre

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The UTC MJE13005D-Kis a high voltage fast-switching NPN power transistor. It is characterized by high breakdown voltage, high current capability, high switching speed and high reliability. The UTC MJE13005D-Kis intended to be used in energy-saving light, electronic ballast, high fre

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The UTC MJE13005D-Kis a high voltage fast-switching NPN power transistor. It is characterized by high breakdown voltage, high current capability, high switching speed and high reliability. The UTC MJE13005D-Kis intended to be used in energy-saving light, electronic ballast, high fre

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The UTC MJE13005D-Kis a high voltage fast-switching NPN power transistor. It is characterized by high breakdown voltage, high current capability, high switching speed and high reliability. The UTC MJE13005D-Kis intended to be used in energy-saving light, electronic ballast, high fre

Silicon NPN transistor in a TO-92 Plastic Package.

Descriptions Silicon NPN transistor in a TO-92 Plastic Package. Features High Voltage, High Switching Speed. Applications Suitable for electrocircuit of charger ect..

Silicon NPN transistor in a TO-126(R) Plastic Package

Descriptions Silicon NPN transistor in a TO-126(R) Plastic Package. Features High Voltage Capability High Speed Switching. Applications High frequency electronic lighting, switching power supply applications.

Silicon NPN transistor in a TO-220 Plastic Package.

Descriptions Silicon NPN transistor in a TO-220 Plastic Package. Features High voltage capability, high speed switching. Applications High frequency electronic lighting, switching power supply applications .

Silicon NPN transistor in a TO-251 Plastic Package.

Descriptions Silicon NPN transistor in a TO-251 Plastic Package. Features High voltage capability, high speed switching. Applications High frequency electronic lighting, switching power supply applications.

Silicon NPN transistor in a TO-252 Plastic Package.

Descriptions Silicon NPN transistor in a TO-252 Plastic Package. Features High voltage capability, high speed switching. Applications High frequency electronic lighting, switching power supply applications.

Silicon NPN transistor in a TO-126(R) Plastic Package

Descriptions Silicon NPN transistor in a TO-126(R) Plastic Package. Features High Voltage Capability, High Speed Switching. Applications High frequency electronic lighting, switching power supply applications.

Silicon NPN transistor in a TO-220 Plastic Package.

Descriptions Silicon NPN transistor in a TO-220 Plastic Package. Features High voltage capability, high speed switching. Applications High frequency electronic lighting, switching power supply applications .

Silicon NPN transistor in a TO-220F Plastic Package

Descriptions Silicon NPN transistor in a TO-220F Plastic Package. Features High voltage capability, high speed switching. Applications High frequency electronic lighting, switching power supply applications .

Silicon NPN transistor in a TO-220 Plastic Package.

Descriptions Silicon NPN transistor in a TO-220 Plastic Package. Features High voltage capability, high speed switching. Applications High frequency electronic lighting, switching power supply applications .

Silicon NPN transistor in a TO-220F Plastic Package

Descriptions Silicon NPN transistor in a TO-220F Plastic Package. Features High voltage capability, high speed switching. Applications High frequency electronic lighting, switching power supply applications.

Silicon NPN transistor in a TO-263 Plastic Package.

Descriptions Silicon NPN transistor in a TO-263 Plastic Package. Features High voltage capability, high speed switching. Applications High frequency electronic lighting, switching power supply applications.

Silicon NPN transistor in a TO-251 Plastic Package.

Descriptions Silicon NPN transistor in a TO-251 Plastic Package. Features High voltage capability, high speed switching. Applications High frequency electronic lighting, switching power supply applications.

Silicon NPN transistor in a TO-220 Plastic Package.

Descriptions Silicon NPN transistor in a TO-220 Plastic Package. Features High voltage capability, high speed switching. Applications High frequency electronic lighting, switching power supply applications .

TRIPLE DIFFUSED NPN TRANSISTOR

文件：67.73 Kbytes Page：4 Pages

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

文件：108.06 Kbytes Page：3 Pages

TRIPLE DIFFUSED NPN TRANSISTOR

文件：56.71 Kbytes Page：4 Pages

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

文件：124.62 Kbytes Page：3 Pages

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

文件：108.06 Kbytes Page：3 Pages

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

文件：124.62 Kbytes Page：3 Pages

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

文件：124.62 Kbytes Page：3 Pages

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

文件：124.62 Kbytes Page：3 Pages

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

文件：124.62 Kbytes Page：3 Pages

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

文件：124.62 Kbytes Page：3 Pages

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

文件：108.06 Kbytes Page：3 Pages

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

文件：124.62 Kbytes Page：3 Pages

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

文件：124.62 Kbytes Page：3 Pages

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

文件：124.62 Kbytes Page：3 Pages

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

文件：124.62 Kbytes Page：3 Pages

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

文件：124.62 Kbytes Page：3 Pages

NPN SILICON POWER TRANSISTOR

SWITCHMODE Series NPN Silicon Power Transistors These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE applications such as Switching Regulator’s, Inverters, Motor Controls,

POWER TRANSISTORS(4A,300-400V,75W)

SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS ... designed for use in high-voltage,high-speed,power switching in inductive circuit, they are particularly suited for 115 and 220V switchmode applications such as switching regulators,inverters. DC-DC conveter, Motor controls, Solenoiid / Relay dri

4 AMPERE NPN SILICON POWER TRANSISTOR 400 VOLTS 75 WATTS

4 AMPERE NPN SILICON POWER TRANSISTOR 400 VOLTS 75 WATTS These devices are designedfor high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V SWITCHMODE applications such as Switching Regulator’s, Inverters, Motor

Silicon Diffused Power Transistor

GENERAL DESCRIPTION The PHE13005 is a silicon npn power switching transistor in the TO220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc.

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS

DESCRIPTION The devices are is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. They use a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. ■ MEDIUM VOLT