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型号 功能描述 生产厂家 企业 LOGO 操作
MJE13005DF

TRIPLE DIFFUSED NPN TRANSISTOR

HIGH VOLTAGE HIGH SPEED POWER SWITCH APPLICATION. • Built-in Free wheeling Diode makes efficient anti saturation operation. • Suitable for half bridge light ballast Applications. • Low base drive requirement.

KECKEC(Korea Electronics)

开益禧无锡开益禧半导体有限公司

MJE13005DF

Switching Transistor, TO-220IS, 400V, 5A

• Low Leakage Current\n• Low Saturation Voltage\n• Suitable for using Switching application;

KECKEC(Korea Electronics)

开益禧无锡开益禧半导体有限公司

NPN SILICON POWER TRANSISTOR

SWITCHMODE Series NPN Silicon Power Transistors These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE applications such as Switching Regulator’s, Inverters, Motor Controls,

ONSEMI

安森美半导体

POWER TRANSISTORS(4A,300-400V,75W)

SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS ... designed for use in high-voltage,high-speed,power switching in inductive circuit, they are particularly suited for 115 and 220V switchmode applications such as switching regulators,inverters. DC-DC conveter, Motor controls, Solenoiid / Relay dri

MOSPEC

统懋

4 AMPERE NPN SILICON POWER TRANSISTOR 400 VOLTS 75 WATTS

4 AMPERE NPN SILICON POWER TRANSISTOR 400 VOLTS 75 WATTS These devices are designedfor high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V SWITCHMODE applications such as Switching Regulator’s, Inverters, Motor

MOTOROLA

摩托罗拉

Silicon Diffused Power Transistor

GENERAL DESCRIPTION The PHE13005 is a silicon npn power switching transistor in the TO220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc.

PHILIPS

飞利浦

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS

DESCRIPTION The devices are is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. They use a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. ■ MEDIUM VOLT

STMICROELECTRONICS

意法半导体

MJE13005DF产品属性

  • 类型

    描述

  • AEC-Q:

    N

  • Package:

    TO-220IS

  • Polarity:

    NPN

  • VCEO[V]:

    400

  • IC[A]:

    5

  • PC[W]:

    30

  • hFE_Min:

    18

  • hFE_Max:

    35

  • VCE(SAT)_MAX[V]:

    1

更新时间:2026-5-19 21:15:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ON
20+
TO-126
38900
原装优势主营型号-可开原型号增税票
ST
26+
TO-3P
60000
只有原装 可配单
ST
23+
TO-3P
16900
正规渠道,只有原装!
MOTOROLA/摩托罗拉
26+
TO-3P
240
现货供应
MOT
25+
4
公司优势库存 热卖中!
MOTOROLA/摩托罗拉
23+
TO-59
8510
原装正品代理渠道价格优势
ON
24+
N/A
4500
KEC
23+
TO-220F
8560
受权代理!全新原装现货特价热卖!
ST
25+
TO-3P
20000
原装,请咨询
ST
25+
TO-3P
20000
原装

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