| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MJE13005DF | TRIPLE DIFFUSED NPN TRANSISTOR HIGH VOLTAGE HIGH SPEED POWER SWITCH APPLICATION. • Built-in Free wheeling Diode makes efficient anti saturation operation. • Suitable for half bridge light ballast Applications. • Low base drive requirement. | KECKEC(Korea Electronics) 开益禧无锡开益禧半导体有限公司 | ||
MJE13005DF | Switching Transistor, TO-220IS, 400V, 5A • Low Leakage Current\n• Low Saturation Voltage\n• Suitable for using Switching application; | KECKEC(Korea Electronics) 开益禧无锡开益禧半导体有限公司 | ||
NPN SILICON POWER TRANSISTOR SWITCHMODE Series NPN Silicon Power Transistors These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE applications such as Switching Regulator’s, Inverters, Motor Controls, | ONSEMI 安森美半导体 | |||
POWER TRANSISTORS(4A,300-400V,75W) SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS ... designed for use in high-voltage,high-speed,power switching in inductive circuit, they are particularly suited for 115 and 220V switchmode applications such as switching regulators,inverters. DC-DC conveter, Motor controls, Solenoiid / Relay dri | MOSPEC 统懋 | |||
4 AMPERE NPN SILICON POWER TRANSISTOR 400 VOLTS 75 WATTS 4 AMPERE NPN SILICON POWER TRANSISTOR 400 VOLTS 75 WATTS These devices are designedfor high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V SWITCHMODE applications such as Switching Regulator’s, Inverters, Motor | MOTOROLA 摩托罗拉 | |||
Silicon Diffused Power Transistor GENERAL DESCRIPTION The PHE13005 is a silicon npn power switching transistor in the TO220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc. | PHILIPS 飞利浦 | |||
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS DESCRIPTION The devices are is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. They use a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. ■ MEDIUM VOLT | STMICROELECTRONICS 意法半导体 |
MJE13005DF产品属性
- 类型
描述
- AEC-Q:
N
- Package:
TO-220IS
- Polarity:
NPN
- VCEO[V]:
400
- IC[A]:
5
- PC[W]:
30
- hFE_Min:
18
- hFE_Max:
35
- VCE(SAT)_MAX[V]:
1
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON |
20+ |
TO-126 |
38900 |
原装优势主营型号-可开原型号增税票 |
|||
ST |
26+ |
TO-3P |
60000 |
只有原装 可配单 |
|||
ST |
23+ |
TO-3P |
16900 |
正规渠道,只有原装! |
|||
MOTOROLA/摩托罗拉 |
26+ |
TO-3P |
240 |
现货供应 |
|||
MOT |
25+ |
4 |
公司优势库存 热卖中! |
||||
MOTOROLA/摩托罗拉 |
23+ |
TO-59 |
8510 |
原装正品代理渠道价格优势 |
|||
ON |
24+ |
N/A |
4500 |
||||
KEC |
23+ |
TO-220F |
8560 |
受权代理!全新原装现货特价热卖! |
|||
ST |
25+ |
TO-3P |
20000 |
原装,请咨询 |
|||
ST |
25+ |
TO-3P |
20000 |
原装 |
MJE13005DF规格书下载地址
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DdatasheetPDF页码索引
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