型号 功能描述 生产厂家 企业 LOGO 操作

POWER TRANSISTOR 2 AMPERES 1000 VOLTS, 50 WATTS Bipolar NPN Transistor

Bipolar NPN Transistor High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector−Emitter Diode and Built−In Efficient Antisaturation Network The MJD18002D2 is a state−of−the−art high speed, high gain bipolar transistor (H2BIP). Tight dynamic characteristics and lot to lot mini

ONSEMI

安森美半导体

POWER TRANSISTOR 2 AMPERES 1000 VOLTS, 50 WATTS Bipolar NPN Transistor

Bipolar NPN Transistor High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector−Emitter Diode and Built−In Efficient Antisaturation Network The MJD18002D2 is a state−of−the−art high speed, high gain bipolar transistor (H2BIP). Tight dynamic characteristics and lot to lot mini

ONSEMI

安森美半导体

更新时间:2025-12-30 11:33:01
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ON
23+
TO-252
11846
一级代理商现货批发,原装正品,假一罚十
ONSEMI/安森美
2511
TO-252-3
360000
电子元器件采购降本30%!原厂直采,砍掉中间差价
ON/安森美
23+
TO-252
13000
原厂授权一级代理,专业海外优势订货,价格优势、品种
ON/安森美
20+
TO-252
32500
现货很近!原厂很远!只做原装
ON/安森美
23+
SOT252
50000
全新原装正品现货,支持订货
ON
24+
SOT252
89000
特价特价100原装长期供货.
ON
10+
TO-252
1000
普通
ON/安森美
2022+
SOT252
12888
原厂代理 终端免费提供样品
ON
24+
DPAK4LEADSingleG
8866
NK/南科功率
2025+
TO-252
986966
国产

MJD18002D2T4GMOS芯片相关品牌

MJD18002D2T4GMOS数据表相关新闻