位置：首页 > IC中文资料第4397页 > MJD18002D2T4G
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MJD18002D2T4G | POWER TRANSISTOR 2 AMPERES 1000 VOLTS, 50 WATTS Bipolar NPN Transistor Bipolar NPN Transistor High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector−Emitter Diode and Built−In Efficient Antisaturation Network The MJD18002D2 is a state−of−the−art high speed, high gain bipolar transistor (H2BIP). Tight dynamic characteristics and lot to lot mini | ONSEMI 安森美半导体 |   | |
MJD18002D2T4G | 封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：剪切带（CT）带盒（TB） 描述：TRANS NPN 450V 2A DPAK 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ONSEMI 安森美半导体 | | |
POWER TRANSISTOR 2 AMPERES 1000 VOLTS, 50 WATTS Bipolar NPN Transistor Bipolar NPN Transistor High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector−Emitter Diode and Built−In Efficient Antisaturation Network The MJD18002D2 is a state−of−the−art high speed, high gain bipolar transistor (H2BIP). Tight dynamic characteristics and lot to lot mini | ONSEMI 安森美半导体 | |
MJD18002D2T4G产品属性
- 类型
描述
- 型号
MJD18002D2T4G
- 功能描述
两极晶体管 - BJT BIP NPN 2A 450V TR F
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
PNP 集电极—基极电压
- VCBO
集电极—发射极最大电压
- VCEO
- 40 V 发射极 - 基极电压
- VEBO
- 6 V
- 增益带宽产品fT
直流集电极/Base Gain hfe
- Min
100 A
- 安装风格
SMD/SMT
- 封装/箱体
PowerFLAT 2 x 2
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
onsemi |
25+ |
DPAK |
21000 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
onsemi |
25+ |
DPAK |
21000 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
ON/安森美 |
22+ |
SOT252 |
100000 |
代理渠道/只做原装/可含税 |
|||
SANKEN |
24+ |
NA |
990000 |
明嘉莱只做原装正品现货 |
|||
24+ |
SOP |
240 |
现货供应 |
||||
MOT |
25+23+ |
TO252 |
49569 |
绝对原装正品现货,全新深圳原装进口现货 |
|||
ON |
22+ |
SOT252 |
3000 |
原装正品,支持实单 |
|||
ON |
25+ |
TO-252 |
35400 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
ON |
22+ |
SOT252 |
13475 |
进口原装 |
|||
ONFAI |
23+ |
TO-252 |
24190 |
原装正品代理渠道价格优势 |
MJD18002D2T4G规格书下载地址
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