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MJ1333晶体管资料
MJ13330别名：MJ13330三极管、MJ13330晶体管、MJ13330晶体三极管
MJ13330生产厂家：美国摩托罗拉半导体公司
MJ13330制作材料：
MJ13330性质：低频或音频放大 （LF）_功率放大 （PA）
MJ13330封装形式：直插封装
MJ13330极限工作电压：400V
MJ13330最大电流允许值：20A
MJ13330最大工作频率：<1MHZ或未知
MJ13330引脚数：2
MJ13330最大耗散功率：175W
MJ13330放大倍数：
MJ13330图片代号：E-44
MJ13330vtest：400
MJ13330htest：999900
- MJ13330atest：20
MJ13330wtest：175
MJ13330代换 MJ13330用什么型号代替：2SC2220,2SC2366,2SD374,
MJ1333价格
参考价格：￥250.1058
型号：MJ13333 品牌：Semiconductors 备注：这里有MJ1333多少钱，2025年最近7天走势，今日出价，今日竞价，MJ1333批发/采购报价，MJ1333行情走势销售排行榜，MJ1333报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage-: VCEO(SUS) = 200V(Min) ·High Switching Speed APPLICATIONS ·Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line operated switch-mode app | ISC 无锡固电 |   | ||
Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage-: VCEO(SUS) = 250V(Min) ·High Switching Speed APPLICATIONS ·Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line operated switch-mode app | ISC 无锡固电 | | ||
Silicon NPN Power Transistor DESCRIPTION • Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 350V(Min) • High Switching Speed APPLICATIONS • Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line operated switch-mode applications. T | ISC 无锡固电 | | ||
SWITCHMODE SERIES NPN SILICON TRANSISTORS SWITCHMODE SERIES NPN SILICON TRANSISTORS …designed for high-voltage, high-speed, power switching in inductive circuits where fall time is critical , They are particularly suited for line operated switchmode applications such as: * Switching Regulators * Inverters * Solenoid and relay drivers | MOSPEC 统懋 | | ||
Silicon NPN Power Transistor DESCRIPTION • Collector-Emitter Sustaining Voltage- : VCEO(sus) = 350V(Min) • High Switching Speed APPLICATIONS • Designed for high-voltage .high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line operated switch-mode applications. T | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Silicon NPN Power Transistor DESCRIPTION • Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 400V(Min) • High Switching Speed APPLICATIONS • Designed for high-voltage .high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line operated switchmode appl | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
20 AMPERE NPN SILICON POWER TRANSISTORS 400-500 VOLTS 175 WATTS SWITCHMODE Series NPN Silicon Power Transistor The MJ13333 transistor is designed for high voltage, high–speed, power switching in inductive circuits where fall time is critical. It is particularly suited for line operated switchmode applications such as: • Switching Regulators • Inverters • S | Motorola 摩托罗拉 | | ||
NPN SILICON POWER TRANSISTORS The MJ13333 transistor is designed for high voltage, high–speed, power switching in inductive circuits where fall time is critical. It is particularly suited for line operated SWITCHMODE applications such as: • Switching Regulators • Inverters • Solenoid and Relay Drivers • Motor Controls • D | ONSEMI 安森美半导体 | | ||
SWITCHMODE SERIES NPN SILICON TRANSISTORS SWITCHMODE SERIES NPN SILICON TRANSISTORS …designed for high-voltage, high-speed, power switching in inductive circuits where fall time is critical , They are particularly suited for line operated switchmode applications such as: * Switching Regulators * Inverters * Solenoid and relay drivers | MOSPEC 统懋 | | ||
isc Silicon NPN Power Transistor DESCRIPTION • Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 400V(Min) • High Switching Speed APPLICATIONS • Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line operated switchmode appl | ISC 无锡固电 | | ||
isc Silicon NPN Power Transistor DESCRIPTION • Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 450V(Min) • High Switching Speed APPLICATIONS • Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line operated switchmode applications. • | ISC 无锡固电 | | ||
SWITCHMODE SERIES NPN SILICON TRANSISTORS SWITCHMODE SERIES NPN SILICON TRANSISTORS …designed for high-voltage, high-speed, power switching in inductive circuits where fall time is critical , They are particularly suited for line operated switchmode applications such as: * Switching Regulators * Inverters * Solenoid and relay drivers | MOSPEC 统懋 | | ||
Silicon NPN Power Transistor DESCRIPTION • Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 450V(Min) • High Switching Speed APPLICATIONS • Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line operated switchmode applications. • | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
SWITCHMODE SERIES NPN SILICON TRANSISTORS SWITCHMODE SERIES NPN SILICON TRANSISTORS …designed for high-voltage, high-speed, power switching in inductive circuits where fall time is critical , They are particularly suited for line operated switchmode applications such as: * Switching Regulators * Inverters * Solenoid and relay drivers | MOSPEC 统懋 | | ||
isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage-: VCEO(SUS) = 500V(Min) ·High Switching Speed APPLICATIONS ·Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are partic ularly suited for line operated switchmode applicati | ISC 无锡固电 | | ||
NPN SILICON POWER TRANSISTORS 文件：131.53 Kbytes Page：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
NPN SILICON POWER TRANSISTORS 文件：131.53 Kbytes Page：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
NPN SILICON POWER TRANSISTORS | ONSEMI 安森美半导体 | | ||
三极管 | MOSPEC 统懋 | | ||
三极管 | MOSPEC 统懋 | | ||
NPN SILICON TRANSISTORS 文件：41.09 Kbytes Page：1 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
NPN SILICON TRANSISTORS 文件：71.67 Kbytes Page：1 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
包装：卷带（TR） 描述：RESISTOR AXIAL 电阻器 通孔式电阻器 | OHMITE | | ||
封装/外壳：轴向 包装：卷带（TR） 描述：RES 133K OHM 1% 1/8W AXIAL 电阻器 通孔式电阻器 | OHMITE | | ||
High Speed Fuses Bussmann® Fuses in Allen-Bradley Drives The following data sheets contain information obtained directly from the manufacturer’s installation instruction manuals. Within each application there are specific requirements that detail how the Power Electronic Equipment should be installed and the prop | COOPER | | ||
High Speed Fuses Bussmann® Fuses in Allen-Bradley Drives The following data sheets contain information obtained directly from the manufacturer’s installation instruction manuals. Within each application there are specific requirements that detail how the Power Electronic Equipment should be installed and the prop | COOPER | | ||
SMD RF Manual Tunable Inductor 文件：134.08 Kbytes Page：2 Pages | YANTEL 研通高频 | | ||
Strain Relief Mounting Hole Punches 文件：130.259 Kbytes Page：1 Pages | Heyco | | ||
Fieldbus, 24 Pr #18 Str TC, PO Ins, IS/OS, PVC Jkt, CMG 文件：258.589 Kbytes Page：3 Pages | BELDEN 百通 | |
MJ1333产品属性
- 类型
描述
- 型号
MJ1333
- 制造商
ADV_SEMI
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MOTO |
24+ |
TO-39 |
27500 |
原装正品,价格最低! |
|||
ON/安森美 |
22+ |
TO-3 |
20000 |
公司只有原装 品质保障 |
|||
ON |
23+ |
TO-3 |
5500 |
现货,全新原装 |
|||
MOT/ON |
专业铁帽 |
TO-3 |
67500 |
铁帽原装主营-可开原型号增税票 |
|||
进口ON |
25+23+ |
TO-3 |
55302 |
绝对原装正品现货,全新深圳原装进口现货 |
|||
MORETHANALL |
23+ |
13000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
||||
MOT/ON |
专业铁帽 |
TO-3 |
2000 |
原装铁帽专营,代理渠道量大可订货 |
|||
ON/安森美 |
2023+ |
TO-3 |
8635 |
全新原装正品,优势价格 |
|||
MOT |
24+ |
1000 |
|||||
MOTOROLA |
24+ |
TO-3 |
35210 |
一级代理/放心采购 |
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MJ1333规格书下载地址
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MJ1333数据表相关新闻
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