Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Sustaining Voltage-: VCEO(SUS) = 250V(Min) ·High Switching Speed APPLICATIONS ·Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line operated switch-mode app

NPN SILICON POWER TRANSISTORS

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Breake Away Header .025(0.64mm) Square Posts

[FOXCONN] Breake Away Header .025 (0.64mm) Square Posts

Breake Away Header .025(0.64mm) Square Posts

[FOXCONN] Breake Away Header .025 (0.64mm) Square Posts

Quad SPST JFET Analog Switches

General Description These devices are a monolithic combination of bipolar and JFET technology producing the industry’s first one chip quad JFET switch. A unique circuit technique is employed to main tain a constant resistance over the analog voltage range of ±10V. The input is designed to opera

Quad SPST JFET Analog Switches

General Description These devices are a monolithic combination of bipolar and JFET technology producing the industry’s first one chip quad JFET switch. A unique circuit technique is employed to main tain a constant resistance over the analog voltage range of ±10V. The input is designed to opera

RADIAL LEADED INDUCTORS

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