Trench and Field Stop IGBT 650V 40A

Features • Low switching losses • Maximum junction temperature 175°C • Positive temperature coefficient • High ruggedness, temperature stable • High short circuit capability(5μs) • Halogen Free. “Green” Device (Note 1) • Epoxy Meets UL 94 V-0 Flammability Rating • Lead Free Finish/RoHS Com

IGBT Discrete

Trench and Field Stop IGBT 650V 40A

Features • Low switching losses • Maximum junction temperature 175°C • Positive temperature coefficient • High ruggedness, temperature stable • High short circuit capability(5μs) • Halogen Free. “Green” Device (Note 1) • Epoxy Meets UL 94 V-0 Flammability Rating • Lead Free Finish/RoHS Com

封装/外壳：TO-247-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IGBT 650V 40A,TO-247AB 分立半导体产品 晶体管 - UGBT、MOSFET - 单

Field Stop IGBT 650 V, 40 A

General Description Using novel field stop IGBT technology, onsemi’s new series of field stop 2nd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, induction heating, telecom, ESS and PFC applications where low conduction and switching losses are essential. Featu

DESIGN/PROCESS CHANGE NOTIFICATION

Description SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti

650V, 40A Field Stop IGBT

General Description Using novel field stop IGBT technology, Fairchild®’s field stop IGBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications where low conduction and switching losses are essential. Features • High Current Capability • Low Saturation Voltage: VCE

N-Channel Enhancement Mode MOSFET

文件：241.88 Kbytes Page：4 Pages

New Products, Tips and Tools for Power and Mobile Applications

文件：3.23672 Mbytes Page：12 Pages