6A Peak Low-Side MOSFET Driver Bipolar/CMOS/DMOS Process

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封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC GATE DRVR LOW-SIDE 8SOIC 集成电路（IC） 栅极驱动器

P-Channel Enhancement Mode Field Effect Transistor

General Description The AO4429 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge. This device is suitable for use as a load switch. The device is ESD protected. Standard Product AO4429 is Pb-free (meets ROHS & Sony 259 specifications). AO4429L is a

P-Channel Enhancement Mode Field Effect Transistor

General Description The AO4429 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge. This device is suitable for use as a load switch. The device is ESD protected. Standard Product AO4429 is Pb-free (meets ROHS & Sony 259 specifications). AO4429L is a

DELAY MODULES,TTL,SURFACE MOUNTED

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The RPC56xx and SPC56xx families of devices have internal Flash

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Ultra_Low On-resistance, Simple Drive Requirement

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