SUPER LOW NOISE InGaAs HEMT

DESCRIPTION The MGF4951A/MGF4952A super-low noise HEMT (High Electron Mobility Transistor) is designed for use in C to K band amplifiers. The lead-less ceramic package assures minimum parasitic losses. FEATURES Low noise figure @ f=12GHz MGF4951A : NFmin. = 0.40dB (Typ.) MGF495

High Frequency Devices-GaAs High Frequency Devices Low Noise GaAs HEMTs MGF4951A

DESCRIPTION\nThe MGF4951A/MGF4952A super-low noise HEMT (High Electron Mobility Transistor) is designed for use in C to K band amplifiers. The lead-less ceramic package assures minimum parasitic losses.FEATURES\nLow noise figure @ f=12GHz\nMGF4951A : NFmin. = 0.40dB (Typ.)\nMGF4952A : NFmin. = 0.60d Low noise figure @ f=12GHz\nMGF4951A : NFmin. = 0.40dB (Typ.)\nMGF4952A : NFmin. = 0.60dB (Typ.);

SUPER LOW NOISE InGaAs HEMT

文件：184.61 Kbytes Page：5 Pages

SUPER LOW NOISE InGaAs HEMT

文件：184.61 Kbytes Page：5 Pages

SUPER LOW NOISE InGaAs HEMT

DESCRIPTION The MGF4951A/MGF4952A super-low noise HEMT (High Electron Mobility Transistor) is designed for use in C to K band amplifiers. The lead-less ceramic package assures minimum parasitic losses. FEATURES Low noise figure @ f=12GHz MGF4951A : NFmin. = 0.40dB (Typ.) MGF495

Memory controller

GENERAL DESCRIPTION The memory controller SAA4951 has been designed for high end TV sets using 2fH-technics. The circuit provides all necessary write, read and clock pulses to control different field memory concepts. Furthermore the drive signals for the horizontal and vertical deflection power s

Adjustable Micropower Voltage Regulators

文件：436.15 Kbytes Page：14 Pages

Adjustable Micropower Voltage Regulators

文件：436.15 Kbytes Page：14 Pages