SUPER LOW NOISE InGaAs HEMT

DESCRIPTION The MGF4951A/MGF4952A super-low noise HEMT (High Electron Mobility Transistor) is designed for use in C to K band amplifiers. The lead-less ceramic package assures minimum parasitic losses. FEATURES Low noise figure @ f=12GHz MGF4951A : NFmin. = 0.40dB (Typ.) MGF495

SUPER LOW NOISE InGaAs HEMT

DESCRIPTION The MGF4951A/MGF4952A super-low noise HEMT (High Electron Mobility Transistor) is designed for use in C to K band amplifiers. The lead-less ceramic package assures minimum parasitic losses. FEATURES Low noise figure @ f=12GHz MGF4951A : NFmin. = 0.40dB (Typ.) MGF495

High Frequency Devices-GaAs High Frequency Devices Low Noise GaAs HEMTs MGF4951A

DESCRIPTION\nThe MGF4951A/MGF4952A super-low noise HEMT (High Electron Mobility Transistor) is designed for use in C to K band amplifiers. The lead-less ceramic package assures minimum parasitic losses.FEATURES\nLow noise figure @ f=12GHz\nMGF4951A : NFmin. = 0.40dB (Typ.)\nMGF4952A : NFmin. = 0.60d Low noise figure @ f=12GHz\nMGF4951A : NFmin. = 0.40dB (Typ.)\nMGF4952A : NFmin. = 0.60dB (Typ.);

SUPER LOW NOISE InGaAs HEMT

文件：184.61 Kbytes Page：5 Pages

SUPER LOW NOISE InGaAs HEMT

文件：184.61 Kbytes Page：5 Pages

Memory controller

GENERAL DESCRIPTION The memory controller SAA4951 has been designed for high end TV sets using 2fH-technics. The circuit provides all necessary write, read and clock pulses to control different field memory concepts. Furthermore the drive signals for the horizontal and vertical deflection power s

Adjustable Micropower Voltage Regulators

文件：436.15 Kbytes Page：14 Pages

Adjustable Micropower Voltage Regulators

文件：436.15 Kbytes Page：14 Pages