位置：首页 > IC中文资料第6351页 > MGF0905A
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MGF0905A | L,S BAND POWER GaAs FET? DESCRIPTION The MGF0905A, GaAs FET with an N-channel schottky gate, is designed for use in UHF band amplifiers. FEATURES • High output power Po=34.0dBm(TYP.) @f=1.65GHz,Pin=26dBm • High power gain Gp=8.0dB(TYP.) @f=1.65GHz,Pin=26dBm • High power added efficiency P.A.E =40(TYP.) | MITSUBISHI 三菱电机 |   | |
MGF0905A | L,S BAND POWER GaAs FET? DESCRIPTION The MGF0905A, GaAs FET with an N-channel schottky gate, is designed for use in UHF band amplifiers. FEATURES High output power Po=34.0dBm(TYP.) @f=1.65GHz,Pin=26dBm High power gain Gp=8.0dB(TYP.) @f=1.65GHz,Pin=26dBm High power added efficiency P.A.E =4 | MITSUBISHI 三菱电机 | | |
MGF0905A | GaAs FET with an N-channel schottky gate DESCRIPTION\nThe MGF0905A, GaAs FET with an N-channel schottky gate, is designed for use in UHF band amplifiers.\nFEATURES\nHigh output power\n Po=34.0dBm(TYP.) @f=1.65GHz,Pin=26dBm\nHigh power gain\n Gp=8.0dB(TYP.) @f=1.65GHz,Pin=26dBm\nHigh power added efficiency\n P.A.E =40%(TYP.) @f=1. High output power\n Po=34.0dBm(TYP.) @f=1.65GHz,Pin=26dBm\nHigh power gain\n Gp=8.0dB(TYP.) @f=1.65GHz,Pin=26dBm\nHigh power added efficiency\n P.A.E =40%(TYP.) @f=1.65GHz,Pin=26dBmAPPLICATION\nFor UHF Band power amplifiersQUALITY\nGGRECOMMENDED BIAS CONDITIONS\nVds=8V\nIds=800mA\nRg=100Ω\; | MITSUBISHI 三菱电机 | | |
MGF0905A | High-power GaAs FET (small signal gain stage) 文件：157.19 Kbytes Page：4 Pages | MITSUBISHI 三菱电机 | | |
L,S BAND POWER GaAs FET? DESCRIPTION The MGF0905A, GaAs FET with an N-channel schottky gate, is designed for use in UHF band amplifiers. FEATURES High output power Po=34.0dBm(TYP.) @f=1.65GHz,Pin=26dBm High power gain Gp=8.0dB(TYP.) @f=1.65GHz,Pin=26dBm High power added efficiency P.A.E =4 | MITSUBISHI 三菱电机 | | ||
GaAs FET with an N-channel schottky gate L,S BAND POWER GaAs FET DESCRIPTION\nThe MGF0905A, GaAs FET with an N-channel schottky gate, is designed for use in UHF band amplifiers.\nFEATURES\nHigh output power\n Po=34.0dBm(TYP.) @f=1.65GHz,Pin=26dBm\nHigh power gain\n Gp=8.0dB(TYP.) @f=1.65GHz,Pin=26dBm\nHigh power added efficiency\n P.A.E =40%(TYP.) @f=1. High output power\n Po=34.0dBm(TYP.) @f=1.65GHz,Pin=26dBm\nHigh power gain\n Gp=8.0dB(TYP.) @f=1.65GHz,Pin=26dBm\nHigh power added efficiency\n P.A.E =40%(TYP.) @f=1.65GHz,Pin=26dBmAPPLICATION\nFor UHF Band power amplifiersQUALITY\nGGRECOMMENDED BIAS CONDITIONS\nVds=8V\nIds=800mA\nRg=100Ω\; | MITSUBISHI 三菱电机 | | ||
High-power GaAs FET (small signal gain stage) 文件：157.19 Kbytes Page：4 Pages | MITSUBISHI 三菱电机 | | ||
L,S BAND POWER GaAs FET? DESCRIPTION The MGF0905A, GaAs FET with an N-channel schottky gate, is designed for use in UHF band amplifiers. FEATURES • High output power Po=34.0dBm(TYP.) @f=1.65GHz,Pin=26dBm • High power gain Gp=8.0dB(TYP.) @f=1.65GHz,Pin=26dBm • High power added efficiency P.A.E =40(TYP.) | MITSUBISHI 三菱电机 | | ||
1Watt SIP7 Single & Dual Output 文件：111.33 Kbytes Page：3 Pages | RECOM | | ||
0.25 Watt SIP4 & DIP8 Single Output 文件：101.43 Kbytes Page：3 Pages | RECOM | | ||
1 Watt SIP7 SIP7 Single & Dual Output 文件：102.24 Kbytes Page：3 Pages | RECOM | |
MGF0905A产品属性
- 类型
描述
- 型号
MGF0905A
- 制造商
MITSUBISHI
- 制造商全称
Mitsubishi Electric Semiconductor
- 功能描述
L,S BAND POWER GaAs FET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MITS |
20+ |
NA |
35830 |
原装优势主营型号-可开原型号增税票 |
|||
MITSUBIS |
26+ |
195 |
现货供应 |
||||
MITSUBISH |
24+ |
SMD |
5000 |
MITSUBISH专营品牌原装正品假一罚十 |
|||
Mitsubis |
25+ |
66880 |
原装正品，欢迎询价 |
||||
MITSUBISHI/三菱 |
2450+ |
SMD |
8850 |
只做原装正品假一赔十为客户做到零风险!! |
|||
Mitsubish |
25+ |
NA |
1431 |
专做原装正品,假一罚百! |
|||
MOTOROLA |
25+ |
2789 |
全新原装自家现货!价格优势! |
||||
MITSUBISHI |
22+ |
N/A |
20000 |
公司只有原装 品质保障 |
|||
MITSUBISH |
NA |
5500 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
MITSUBISHI/三菱 |
25+ |
SMD |
15000 |
本公司 只做全新原装正品 |
MGF0905A规格书下载地址
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