位置：首页 > IC中文资料第6351页 > MGF0905
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MGF0905 | L,S BAND POWER GaAs FET? DESCRIPTION The MGF0905A, GaAs FET with an N-channel schottky gate, is designed for use in UHF band amplifiers. FEATURES • High output power Po=34.0dBm(TYP.) @f=1.65GHz,Pin=26dBm • High power gain Gp=8.0dB(TYP.) @f=1.65GHz,Pin=26dBm • High power added efficiency P.A.E =40(TYP.) | Mitsubishi 三菱电机 |   | |
L,S BAND POWER GaAs FET? DESCRIPTION The MGF0905A, GaAs FET with an N-channel schottky gate, is designed for use in UHF band amplifiers. FEATURES • High output power Po=34.0dBm(TYP.) @f=1.65GHz,Pin=26dBm • High power gain Gp=8.0dB(TYP.) @f=1.65GHz,Pin=26dBm • High power added efficiency P.A.E =40(TYP.) | Mitsubishi 三菱电机 | | ||
L,S BAND POWER GaAs FET? DESCRIPTION The MGF0905A, GaAs FET with an N-channel schottky gate, is designed for use in UHF band amplifiers. FEATURES High output power Po=34.0dBm(TYP.) @f=1.65GHz,Pin=26dBm High power gain Gp=8.0dB(TYP.) @f=1.65GHz,Pin=26dBm High power added efficiency P.A.E =4 | Mitsubishi 三菱电机 | | ||
L,S BAND POWER GaAs FET? DESCRIPTION The MGF0905A, GaAs FET with an N-channel schottky gate, is designed for use in UHF band amplifiers. FEATURES High output power Po=34.0dBm(TYP.) @f=1.65GHz,Pin=26dBm High power gain Gp=8.0dB(TYP.) @f=1.65GHz,Pin=26dBm High power added efficiency P.A.E =4 | Mitsubishi 三菱电机 | | ||
GaAs FET with an N-channel schottky gate | Mitsubishi 三菱电机 | | ||
High-power GaAs FET (small signal gain stage) 文件：157.19 Kbytes Page：4 Pages | Mitsubishi 三菱电机 | | ||
GaAs FET with an N-channel schottky gate L,S BAND POWER GaAs FET | Mitsubishi 三菱电机 | | ||
High-power GaAs FET (small signal gain stage) 文件：157.19 Kbytes Page：4 Pages | Mitsubishi 三菱电机 | | ||
SPRING-LOADED CONNECTORS Discrete Spring-Loaded Contacts 文件：145.27 Kbytes Page：1 Pages | MILL-MAX | | ||
METAL Brush 文件：512.86 Kbytes Page：1 Pages | ASSUN | | ||
METAL Brush 文件：291.74 Kbytes Page：1 Pages | ASSUN | | ||
METAL Brush 文件：328.31 Kbytes Page：1 Pages | ASSUN | | ||
Internally Matched LNA Module 文件：458.77 Kbytes Page：3 Pages | ASB | |
MGF0905产品属性
- 类型
描述
- 型号
MGF0905
- 制造商
MITSUBISHI
- 制造商全称
Mitsubishi Electric Semiconductor
- 功能描述
L,S BAND POWER GaAs FET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MITSUBISHI/三菱 |
21+ |
ORIGINAL |
10000 |
全新原装 公司现货 价格优 |
|||
MITSU |
23+ |
GF-21 |
13000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
MITSUBISHI |
NA |
5500 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
MITSUBISH |
24+ |
SMD |
5000 |
MITSUBISH专营品牌原装正品假一罚十 |
|||
MITSUBIS |
23+ |
TO-59 |
8510 |
原装正品代理渠道价格优势 |
|||
MITSUBISH |
20+ |
GF-21 |
29516 |
高频管全新原装主营-可开原型号增税票 |
|||
MITSUBISHI |
23+ |
假一赔十 |
50000 |
全新原装正品现货,支持订货 |
|||
MITSUBIS |
24+ |
195 |
现货供应 |
||||
MITSUBISHI/三菱 |
24+ |
NA/ |
35 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
TI |
23+ |
NA |
12000 |
全新原装假一赔十 |
MGF0905规格书下载地址
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