MOS Gated Schottky Diode

Super low forward voltage drop

文件：158.31 Kbytes Page：3 Pages

Super low forward voltage drop

文件：158.31 Kbytes Page：3 Pages

Super low forward voltage drop

文件：158.31 Kbytes Page：3 Pages

Super low forward voltage drop

文件：158.31 Kbytes Page：3 Pages

IGBT

FEATURES · Low Saturation Voltage:VCE(sat)=1.75V@IC=30A · High Speed Switching · High Input Impedance APPLICATIONS · General Purpose Inverters · Automotive Chargers · UPS,PFC · Induction Heating

1300 V, 30 A Shorted-anode IGBT

Features • High Speed Switching • Low Saturation Voltage: VCE(sat) = 1.75 V @ IC = 30 A • High Input Impedance • RoHS Compliant Applications • Induction Heating, Microwave Oven General Description Using advanced field stop trench and shorted-anode technology, Fairchild’s shorted-anode

30.0 Ampere Surface Mount Dual Series Connection Ultra Fast Recovery Rectifiers

Features ※ ThinkiSemi latest&matured process FRD/FRED ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power S

Shorted AnodeTM IGBT

文件：646.77 Kbytes Page：8 Pages

thinQ!TM SiC Schot tky Diode

文件：753.63 Kbytes Page：11 Pages