Ignition IGBT 15 Amps, 410 Volts

Internally Clamped N-Channel IGBT This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over–Voltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high volt

Ignition IGBT 15 Amps, 410 Volts N-Channel TO-220 and D2PAK

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Ignition IGBT 15 Amps, 410 Volts

Internally Clamped N-Channel IGBT

Internally Clamped N-Channel IGBT This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over–Voltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high volt

Ignition IGBT 15 Amps, 410 Volts

Internally Clamped N-Channel IGBT This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over–Voltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high volt

Ignition IGBT 15 Amps, 410 Volts N-Channel TO-220 and D2PAK

文件：91.6 Kbytes Page：10 Pages

封装/外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB 包装：管件 描述：IGBT 440V 15A 150W D2PAK 分立半导体产品 晶体管 - UGBT、MOSFET - 单

Internally Clamped N-Channel IGBT

15A, 400V N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 15N40 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalan

DESIGN/PROCESS CHANGE NOTIFICATION

Description SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti

N-Channel MOSFET 400V, 15A, 0.3廓

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high

N-CHANNEL POWER MOSFET

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N-Channel Enhancement Mode MOSFET

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