位置:首页 > IC中文资料第5181页 > MG100
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
TECHNICAL DATA TRANSISTOR BJT POWER MODULE | TOSHIBA 东芝 | |||
TECHNICAL DATA TRANSISTOR BJT POWER MODULE | TOSHIBA 东芝 | |||
TECHNICAL DATA TRANSISTOR BJT POWER MODULE | TOSHIBA 东芝 | |||
TRANSISTOR MODULES [WESTCODE] WESTCODE TRANSISTOR MODULES are designed for use in various types of motor control and other high power switching applications and consist of insulated type DARLINGTON TRANSISTORS. The electrodes are fully isolated from heat sink. Single ended electrode construction is used to greatly | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
TRANSISTOR MODULES [WESTCODE] WESTCODE TRANSISTOR MODULES are designed for use in various types of motor control and other high power switching applications and consist of insulated type DARLINGTON TRANSISTORS. The electrodes are fully isolated from heat sink. Single ended electrode construction is used to greatly | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
TRANSISTOR MODULES [WESTCODE] WESTCODE TRANSISTOR MODULES are designed for use in various types of motor control and other high power switching applications and consist of insulated type DARLINGTON TRANSISTORS. The electrodes are fully isolated from heat sink. Single ended electrode construction is used to greatly | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
N CHANNEL IGBT (HIGH PWER SWITCHING, MOTOR CONTROL APPLICATIONS)
| TOSHIBA 东芝 | |||
N CHANNEL IGBT (HIGH PWER SWITCHING, MOTOR CONTROL APPLICATIONS) High Power Switching Applications Motor Control Applications ● High input impedance ● High spee : tf = 0.35µs (max) trr = 0.15µs (max) ● Low saturation voltage : VCE (sat) = 3.5V (max) ● Enhancement-mode ● The electrodes are isolated from case. | TOSHIBA 东芝 | |||
N CHANNEL IGBT (HIGH PWER SWITCHING, MOTOR CONTROL APPLICATIONS) High Power Switching Applications Motor Control Applications ● The electrodes are isolated from case. ● High input impedance. ● 6 IGBTs built into 1 package. ● Enhancement-mode. ● High speed : tf = 0.30µs (Max) (IC = 100A) trr = 0.15µs (Max) (IF = 100A) ● Low satura | TOSHIBA 东芝 | |||
TRANSISTOR MODULES [WESTCODE] WESTCODE TRANSISTOR MODULES are designed for use in various types of motor control and other high power switching applications and consist of insulated type DARLINGTON TRANSISTORS. The electrodes are fully isolated from heat sink. Single ended electrode construction is used to greatly | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
TRANSISTOR MODULES [WESTCODE] WESTCODE TRANSISTOR MODULES are designed for use in various types of motor control and other high power switching applications and consist of insulated type DARLINGTON TRANSISTORS. The electrodes are fully isolated from heat sink. Single ended electrode construction is used to greatly | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
TRANSISTOR MODULES [WESTCODE] WESTCODE TRANSISTOR MODULES are designed for use in various types of motor control and other high power switching applications and consist of insulated type DARLINGTON TRANSISTORS. The electrodes are fully isolated from heat sink. Single ended electrode construction is used to greatly | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
TRANSISTOR MODULES [WESTCODE] WESTCODE TRANSISTOR MODULES are designed for use in various types of motor control and other high power switching applications and consist of insulated type DARLINGTON TRANSISTORS. The electrodes are fully isolated from heat sink. Single ended electrode construction is used to greatly | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
TRANSISTOR MODULES [WESTCODE] WESTCODE TRANSISTOR MODULES are designed for use in various types of motor control and other high power switching applications and consist of insulated type DARLINGTON TRANSISTORS. The electrodes are fully isolated from heat sink. Single ended electrode construction is used to greatly | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
TRANSISTOR MODULES [WESTCODE] WESTCODE TRANSISTOR MODULES are designed for use in various types of motor control and other high power switching applications and consist of insulated type DARLINGTON TRANSISTORS. The electrodes are fully isolated from heat sink. Single ended electrode construction is used to greatly | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
high input impedance GTR Module Silicon N-Channel IGBT High Power Switching Applications Motor Control Applications | TOSHIBA 东芝 | |||
N CHANNEL IGBT (HIGH PWER SWITCHING, MOTOR CONTROL APPLICATIONS) High Power Switching applications Motor Control Applications ● High input impedance ● High speed : tf = 0.5µs (Max) trr = 0.5µs (Max) ● Low saturation voltage : VCE (sat) = 4.0V (Max) ● Enhancement-mode ● Includes a complete half bridge in one package. ● The electrodes are isolated from cas | TOSHIBA 东芝 | |||
N CHANNEL IGBT (HIGH PWER SWITCHING, MOTOR CONTROL APPLICATIONS) High Power Switching Applications Motor Control Applications ● High input impedance ● High speed : tf = 0.5µs (max) trr = 0.5µs (max) ● Low saturation voltage : VCE (sat) = 4.0V (max) ● Enhancement-mode ● Includes a complete half bridge in one package. ● The el | TOSHIBA 东芝 | |||
N CHANNEL IGBT (HIGH PWER SWITCHING, MOTOR CONTROL APPLICATIONS) High Power Switching Applications Motor Control Applications • High input impedance • High speed : tf = 0.3µs (Max) @Inductive load • Low saturation voltage : VCE (sat) = 3.6V (Max) • Enhancement-mode • Includes a complete half bridge in one package. • The electr | TOSHIBA 东芝 | |||
N CHANNEL IGBT (HIGH PWER SWITCHING, MOTOR CONTROL APPLICATIONS) High Power Switching Applications Motor Control Applications • High Input Impedance • High Speed : tf = 0.3µs (Max) @Inductive load • Low Saturation Voltage : VCE (sat) = 3.6V (Max) • Enhancement-Mode • Includes a Complete Half Bridge in One Package | TOSHIBA 东芝 | |||
TOSHIBA IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications ● High input impedance ● Enhancement-mode ● The electrodes are isolated from case. | TOSHIBA 东芝 | |||
GUNN Diodes Cathode Heat Sink 文件:210.66 Kbytes Page:4 Pages | Microsemi 美高森美 | |||
GUNN Diodes Cathode Heat Sink 文件:210.66 Kbytes Page:4 Pages | Microsemi 美高森美 | |||
GUNN Diodes Cathode Heat Sink 文件:210.66 Kbytes Page:4 Pages | Microsemi 美高森美 | |||
GUNN Diodes Cathode Heat Sink 文件:210.66 Kbytes Page:4 Pages | Microsemi 美高森美 | |||
砷化镓霍尔元件 | matrixsens 矩阵光电 | |||
GUNN Diodes Cathode Heat Sink 文件:210.66 Kbytes Page:4 Pages | Microsemi 美高森美 | |||
Ferrite Chip Beads 文件:206.52 Kbytes Page:1 Pages | Bourns 伯恩斯 | |||
GUNN Diodes Cathode Heat Sink 文件:210.66 Kbytes Page:4 Pages | Microsemi 美高森美 | |||
GUNN Diodes Cathode Heat Sink 文件:210.66 Kbytes Page:4 Pages | Microsemi 美高森美 | |||
封装/外壳:接线柱 包装:托盘 描述:GAAS GUNN EPI DOWN HERMETIC PILL 分立半导体产品 二极管 - 射频 | Microchip 微芯科技 | |||
GUNN Diodes Cathode Heat Sink 文件:210.66 Kbytes Page:4 Pages | Microsemi 美高森美 | |||
封装/外壳:接线柱 包装:托盘 描述:GAAS GUNN EPI DOWN HERMETIC STUD 分立半导体产品 二极管 - 射频 | Microchip 微芯科技 | |||
GUNN Diodes Cathode Heat Sink 文件:210.66 Kbytes Page:4 Pages | Microsemi 美高森美 | |||
PIN 二极管 | Microchip 微芯科技 | |||
GUNN Diodes Cathode Heat Sink 文件:210.66 Kbytes Page:4 Pages | Microsemi 美高森美 | |||
TECHNICAL DATA | TOSHIBA 东芝 | |||
N CHANNEL IGBT (HIGH PWER SWITCHING, MOTOR CONTROL APPLICATIONS) 文件:171.65 Kbytes Page:4 Pages | TOSHIBA 东芝 | |||
N CHANNEL IGBT (HIGH PWER SWITCHING, MOTOR CONTROL APPLICATIONS) 文件:251.45 Kbytes Page:5 Pages | TOSHIBA 东芝 | |||
N CHANNEL IGBT (HIGH PWER SWITCHING, MOTOR CONTROL APPLICATIONS) 文件:252.34 Kbytes Page:5 Pages | TOSHIBA 东芝 | |||
N CHANNEL IGBT (HIGH PWER SWITCHING, MOTOR CONTROL APPLICATIONS) 文件:299.67 Kbytes Page:6 Pages | TOSHIBA 东芝 | |||
Precision Wirewound Resistors 100 Series / SM Series / PC Series • Resistances to 6 Megohms • Resistance Tolerances to ±0.005 • Temperature Coeffcients of ±2 ppm/°C • High TCR Available (Balco & Platinum Wire) • 100 Acceptance Tested / Traceable to NIST • Long Term Stability / 100ppm/year • Matched Resistance Sets t | Riedon | |||
1.3 Watts Axial Leaded Zener Diodes VOLTAGE RANGE: 2.4 - 200V POWER: 1.3Wa t t s Features ● Complete Voltage Range 2.4 to 200 Volts ● High peak reverse power dissipation ● High reliability ● Low leakage current | SUNMATE 森美特 | |||
SHIELDED SMT POWER INDUCTORS ● FEATURE Various high power inductor are Superior to be high saturation for surface mounting ● APPLICATIONS 2 DC/DC converter power supply, Telecommunication equipment | PRODUCTWELL | |||
100/200 文件:3.83844 Mbytes Page:2 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
TOGGLE SWITCHES - MINIATURE 文件:1.55809 Mbytes Page:10 Pages | E-SWITCH |
MG100产品属性
- 类型
描述
- 型号
MG100
- 制造商
MALLORY
- 功能描述
POTENTIOMETER 3 DAYS FACTORY CERTS
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TOSHIBA/东芝 |
专业模块 |
MODULE |
8513 |
模块原装主营-可开原型号增税票 |
|||
TOSHIBA |
23+ |
模块 |
900 |
全新原装正品,量大可订货!可开17%增值票!价格优势! |
|||
TOSHIBA |
模块 |
1520 |
全新原装正品 数量多可订货 一级代理优势 |
||||
IGBT |
NEW |
模块 |
3562 |
代理全系列销售, 全新原装正品,价格优势,长期供应,量大可订 |
|||
IGBT |
23+ |
模块 |
69 |
||||
TOSHIBA/东芝 |
23+ |
module |
13000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
24+ |
40 |
正反极配对 |
|||||
原厂 |
2023+ |
模块 |
600 |
专营模块,继电器,公司原装现货 |
|||
TOSHIBA/东芝 |
2447 |
MODULE |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
TOSHIBA |
23+ |
标准封装 |
5000 |
原厂授权一级代理 IGBT模块 可控硅 晶闸管 熔断器质保 |
MG100芯片相关品牌
MG100规格书下载地址
MG100参数引脚图相关
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- MFWZ003
- MFWPTVT
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- MFWPSVT
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- MFWPSRU
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- MFWPDS
- MFWPDRU
- MFWPDRA
- MFWB5TS
- MFWB5SS
- MFWB5DS
- MFWATVT
- MFWATS
- MFWATRU
- MFWATRA
MG100数据表相关新闻
MG802C256Q-8
MG802C256Q-8
2023-10-31MF-MSHT110KX-2
进口代理
2022-7-12MF-SM050-2
MF-SM050-2
2020-12-29MFR0W4F1002A50
属性 参数值 商品目录 金属膜电阻 阻值(欧姆) 10K 精度 ±1%_ 功率 1/4W 温度系数 ±50ppm/°C属性 参数值 商品目录 金属膜电阻 阻值(欧姆) 10K 精度 ±1%_ 功率 1/4W 温度系数 ±50ppm/°C
2020-12-4MG725-12.5K-1%
MG725-12.5K-1%
2020-10-16MGA-31289-TR1G射频放大器原装热卖
MGA-31289-TR1G全新原装正品现货热卖,假一罚十!
2019-11-6
DdatasheetPDF页码索引
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