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MG10晶体管资料
MG10...400别名：MG10...400三极管、MG10...400晶体管、MG10...400晶体三极管
MG10...400生产厂家：日本东芝公司
MG10...400制作材料：Si-P+Darl
MG10...400性质：
MG10...400封装形式：
MG10...400极限工作电压：
MG10...400最大电流允许值：
MG10...400最大工作频率：<1MHZ或未知
MG10...400引脚数：
MG10...400最大耗散功率：
MG10...400放大倍数：
MG10...400图片代号：NO
MG10...400vtest：0
MG10...400htest：999900
- MG10...400atest：0
MG10...400wtest：0
MG10...400代换 MG10...400用什么型号代替：
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
TECHNICAL DATA TRANSISTORBJTPOWERMODULE | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 |  |   | |
TECHNICAL DATA TRANSISTORBJTPOWERMODULE | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
TECHNICAL DATA TRANSISTORBJTPOWERMODULE | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
TRANSISTOR MODULES [WESTCODE] WESTCODETRANSISTORMODULESaredesignedforuseinvarioustypesofmotorcontrolandotherhighpowerswitchingapplicationsandconsistofinsulatedtypeDARLINGTONTRANSISTORS.Theelectrodesarefullyisolatedfromheatsink.Singleendedelectrodeconstructionisusedtogreatly | ETCList of Unclassifed Manufacturers 未分类制造商 |  | | |
TRANSISTOR MODULES [WESTCODE] WESTCODETRANSISTORMODULESaredesignedforuseinvarioustypesofmotorcontrolandotherhighpowerswitchingapplicationsandconsistofinsulatedtypeDARLINGTONTRANSISTORS.Theelectrodesarefullyisolatedfromheatsink.Singleendedelectrodeconstructionisusedtogreatly | ETCList of Unclassifed Manufacturers 未分类制造商 | | | |
TRANSISTOR MODULES [WESTCODE] WESTCODETRANSISTORMODULESaredesignedforuseinvarioustypesofmotorcontrolandotherhighpowerswitchingapplicationsandconsistofinsulatedtypeDARLINGTONTRANSISTORS.Theelectrodesarefullyisolatedfromheatsink.Singleendedelectrodeconstructionisusedtogreatly | ETCList of Unclassifed Manufacturers 未分类制造商 | | | |
N CHANNEL IGBT (HIGH PWER SWITCHING, MOTOR CONTROL APPLICATIONS)
| TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
N CHANNEL IGBT (HIGH PWER SWITCHING, MOTOR CONTROL APPLICATIONS) HighPowerSwitchingApplications MotorControlApplications ●Highinputimpedance ●Highspee:tf=0.35µs(max) trr=0.15µs(max) ●Lowsaturationvoltage:VCE(sat)=3.5V(max) ●Enhancement-mode ●Theelectrodesareisolatedfromcase. | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
N CHANNEL IGBT (HIGH PWER SWITCHING, MOTOR CONTROL APPLICATIONS) HighPowerSwitchingApplications MotorControlApplications ●Theelectrodesareisolatedfromcase. ●Highinputimpedance. ●6IGBTsbuiltinto1package. ●Enhancement-mode. ●Highspeed:tf=0.30µs(Max)(IC=100A) trr=0.15µs(Max)(IF=100A) ●Lowsatura | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
TRANSISTOR MODULES [WESTCODE] WESTCODETRANSISTORMODULESaredesignedforuseinvarioustypesofmotorcontrolandotherhighpowerswitchingapplicationsandconsistofinsulatedtypeDARLINGTONTRANSISTORS.Theelectrodesarefullyisolatedfromheatsink.Singleendedelectrodeconstructionisusedtogreatly | ETCList of Unclassifed Manufacturers 未分类制造商 | | | |
TRANSISTOR MODULES [WESTCODE] WESTCODETRANSISTORMODULESaredesignedforuseinvarioustypesofmotorcontrolandotherhighpowerswitchingapplicationsandconsistofinsulatedtypeDARLINGTONTRANSISTORS.Theelectrodesarefullyisolatedfromheatsink.Singleendedelectrodeconstructionisusedtogreatly | ETCList of Unclassifed Manufacturers 未分类制造商 | | | |
TRANSISTOR MODULES [WESTCODE] WESTCODETRANSISTORMODULESaredesignedforuseinvarioustypesofmotorcontrolandotherhighpowerswitchingapplicationsandconsistofinsulatedtypeDARLINGTONTRANSISTORS.Theelectrodesarefullyisolatedfromheatsink.Singleendedelectrodeconstructionisusedtogreatly | ETCList of Unclassifed Manufacturers 未分类制造商 | | | |
TRANSISTOR MODULES [WESTCODE] WESTCODETRANSISTORMODULESaredesignedforuseinvarioustypesofmotorcontrolandotherhighpowerswitchingapplicationsandconsistofinsulatedtypeDARLINGTONTRANSISTORS.Theelectrodesarefullyisolatedfromheatsink.Singleendedelectrodeconstructionisusedtogreatly | ETCList of Unclassifed Manufacturers 未分类制造商 | | | |
TRANSISTOR MODULES [WESTCODE] WESTCODETRANSISTORMODULESaredesignedforuseinvarioustypesofmotorcontrolandotherhighpowerswitchingapplicationsandconsistofinsulatedtypeDARLINGTONTRANSISTORS.Theelectrodesarefullyisolatedfromheatsink.Singleendedelectrodeconstructionisusedtogreatly | ETCList of Unclassifed Manufacturers 未分类制造商 | | | |
TRANSISTOR MODULES [WESTCODE] WESTCODETRANSISTORMODULESaredesignedforuseinvarioustypesofmotorcontrolandotherhighpowerswitchingapplicationsandconsistofinsulatedtypeDARLINGTONTRANSISTORS.Theelectrodesarefullyisolatedfromheatsink.Singleendedelectrodeconstructionisusedtogreatly | ETCList of Unclassifed Manufacturers 未分类制造商 | | | |
high input impedance GTRModule SiliconN-ChannelIGBT HighPowerSwitchingApplications MotorControlApplications | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
N CHANNEL IGBT (HIGH PWER SWITCHING, MOTOR CONTROL APPLICATIONS) HighPowerSwitchingapplications MotorControlApplications ●Highinputimpedance ●Highspeed:tf=0.5µs(Max)trr=0.5µs(Max) ●Lowsaturationvoltage:VCE(sat)=4.0V(Max) ●Enhancement-mode ●Includesacompletehalfbridgeinonepackage. ●Theelectrodesareisolatedfromcas | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
N CHANNEL IGBT (HIGH PWER SWITCHING, MOTOR CONTROL APPLICATIONS) HighPowerSwitchingApplications MotorControlApplications ●Highinputimpedance ●Highspeed:tf=0.5µs(max) trr=0.5µs(max) ●Lowsaturationvoltage :VCE(sat)=4.0V(max) ●Enhancement-mode ●Includesacompletehalfbridgeinonepackage. ●Theel | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
N CHANNEL IGBT (HIGH PWER SWITCHING, MOTOR CONTROL APPLICATIONS) HighPowerSwitchingApplications MotorControlApplications •Highinputimpedance •Highspeed:tf=0.3µs(Max) @Inductiveload •Lowsaturationvoltage :VCE(sat)=3.6V(Max) •Enhancement-mode •Includesacompletehalfbridgeinonepackage. •Theelectr | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
N CHANNEL IGBT (HIGH PWER SWITCHING, MOTOR CONTROL APPLICATIONS) HighPowerSwitchingApplications MotorControlApplications •HighInputImpedance •HighSpeed:tf=0.3µs(Max) @Inductiveload •LowSaturationVoltage :VCE(sat)=3.6V(Max) •Enhancement-Mode •IncludesaCompleteHalfBridgeinOnePackage | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
TOSHIBA IGBT Module Silicon N Channel IGBT HighPower&HighSpeedSwitchingApplications ●Highinputimpedance ●Enhancement-mode ●Theelectrodesareisolatedfromcase. | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
GUNN Diodes Cathode Heat Sink 文件：210.66 Kbytes Page：4 Pages | MicrosemiMicrosemi Corporation 美高森美美高森美公司 |  | | |
GUNN Diodes Cathode Heat Sink 文件：210.66 Kbytes Page：4 Pages | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
GUNN Diodes Cathode Heat Sink 文件：210.66 Kbytes Page：4 Pages | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
GUNN Diodes Cathode Heat Sink 文件：210.66 Kbytes Page：4 Pages | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
GUNN Diodes Cathode Heat Sink 文件：210.66 Kbytes Page：4 Pages | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
Ferrite Chip Beads 文件：206.52 Kbytes Page：1 Pages | BournsBourns Inc. 伯恩斯（邦士） |  | | |
GUNN Diodes Cathode Heat Sink 文件：210.66 Kbytes Page：4 Pages | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
GUNN Diodes Cathode Heat Sink 文件：210.66 Kbytes Page：4 Pages | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
封装/外壳：接线柱 包装：托盘 描述：GAAS GUNN EPI DOWN HERMETIC PILL 分立半导体产品 二极管 - 射频 | MicrochipMicrochip Technology Inc. 微芯科技微芯科技股份有限公司 |  | | |
GUNN Diodes Cathode Heat Sink 文件：210.66 Kbytes Page：4 Pages | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
封装/外壳：接线柱 包装：托盘 描述：GAAS GUNN EPI DOWN HERMETIC STUD 分立半导体产品 二极管 - 射频 | MicrochipMicrochip Technology Inc. 微芯科技微芯科技股份有限公司 | | | |
GUNN Diodes Cathode Heat Sink 文件：210.66 Kbytes Page：4 Pages | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
GUNN Diodes Cathode Heat Sink 文件：210.66 Kbytes Page：4 Pages | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
N CHANNEL IGBT (HIGH PWER SWITCHING, MOTOR CONTROL APPLICATIONS) 文件：171.65 Kbytes Page：4 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
N CHANNEL IGBT (HIGH PWER SWITCHING, MOTOR CONTROL APPLICATIONS) 文件：251.45 Kbytes Page：5 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
N CHANNEL IGBT (HIGH PWER SWITCHING, MOTOR CONTROL APPLICATIONS) 文件：252.34 Kbytes Page：5 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
N CHANNEL IGBT (HIGH PWER SWITCHING, MOTOR CONTROL APPLICATIONS) 文件：299.67 Kbytes Page：6 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
GUNN Diodes Cathode Heat Sink 文件：210.66 Kbytes Page：4 Pages | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
GUNN Diodes Cathode Heat Sink 文件：210.66 Kbytes Page：4 Pages | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
GUNN Diodes Cathode Heat Sink 文件：210.66 Kbytes Page：4 Pages | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
GUNN Diodes Cathode Heat Sink 文件：210.66 Kbytes Page：4 Pages | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
GUNN Diodes Cathode Heat Sink 文件：210.66 Kbytes Page：4 Pages | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
GUNN Diodes Cathode Heat Sink 文件：210.66 Kbytes Page：4 Pages | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
GUNN Diodes Cathode Heat Sink 文件：210.66 Kbytes Page：4 Pages | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
GUNN Diodes Cathode Heat Sink 文件：210.66 Kbytes Page：4 Pages | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
GUNN Diodes Cathode Heat Sink 文件：210.66 Kbytes Page：4 Pages | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
GUNN Diodes Cathode Heat Sink 文件：210.66 Kbytes Page：4 Pages | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
GUNN Diodes Cathode Heat Sink 文件：210.66 Kbytes Page：4 Pages | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
GUNN Diodes Cathode Heat Sink 文件：210.66 Kbytes Page：4 Pages | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
GUNN Diodes Cathode Heat Sink 文件：210.66 Kbytes Page：4 Pages | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
GUNN Diodes Cathode Heat Sink 文件：210.66 Kbytes Page：4 Pages | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
GUNN Diodes Cathode Heat Sink 文件：210.66 Kbytes Page：4 Pages | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
GUNN Diodes Cathode Heat Sink 文件：210.66 Kbytes Page：4 Pages | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
GUNN Diodes Cathode Heat Sink 文件：210.66 Kbytes Page：4 Pages | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
GUNN Diodes Cathode Heat Sink 文件：210.66 Kbytes Page：4 Pages | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
GUNN Diodes Cathode Heat Sink 文件：210.66 Kbytes Page：4 Pages | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
GUNN Diodes Cathode Heat Sink 文件：210.66 Kbytes Page：4 Pages | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
GUNN Diodes Cathode Heat Sink 文件：210.66 Kbytes Page：4 Pages | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
GUNN Diodes Cathode Heat Sink 文件：210.66 Kbytes Page：4 Pages | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | |
MG10产品属性
- 类型
描述
- 型号
MG10
- 制造商
Cornell Dubilier Electronics
- 功能描述
Bushing Mount Wirewound Control
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TOSHIBA |
2018 |
模块 |
300 |
十七年VIP会员,诚信经营，一手货源，原装正品可零售！ |
|||
TOSHIBA |
NEW&ORG |
1800 |
模块专业分销商!原装正品!价格绝对优势! |
||||
TOSHIBA |
23+ |
标准封装 |
5000 |
原厂授权一级代理 IGBT模块 可控硅 晶闸管 熔断器质保 |
|||
TOSHIBA |
模块 |
1520 |
全新原装正品 数量多可订货 一级代理优势 |
||||
TOSHIBA |
18+ |
2173 |
公司大量全新正品 随时可以发货 |
||||
TOSHIBA |
2018+ |
module |
6000 |
全新原装正品现货,假一赔佰 |
|||
GTR |
23+ |
模块 |
99 |
||||
TOSHIBA |
23+24 |
模块 |
2980 |
模块专业供货,优势现货,价格市场最优! |
|||
TOSHIBA |
95+ |
5 |
特价热销现货库存100%原装正品欢迎来电订购! |
||||
TOSHIBA |
2021+ |
模块 |
6430 |
原装现货/欢迎来电咨询 |
MG10芯片相关品牌
MG10规格书下载地址
MG10参数引脚图相关
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- molex连接器
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- MG134C
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- MG02
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- MFWZ003
- MFWPTVT
- MFWPTS
- MFWPTRU
- MFWPTRA
- MFWPSVT
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- MFWPDVT
- MFWPDS
- MFWPDRU
- MFWPDRA
- MFWB5TS
- MFWB5SS
- MFWB5DS
- MFWATVT
- MFWATS
- MFWATRU
- MFWATRA
- MF500
- MF3304
- MF178
- MF1164
- MF1161
- MDS60
- MDS26
- MDS21
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- MDL01
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MG10数据表相关新闻
MG802C256Q-8
MG802C256Q-8
2023-10-31MF-MSHT110KX-2
进口代理
2022-7-12MF-SM050-2
MF-SM050-2
2020-12-29MFR0W4F1002A50
属性参数值 商品目录金属膜电阻 阻值（欧姆）10K 精度±1%_ 功率1/4W 温度系数±50ppm/°C属性参数值 商品目录金属膜电阻 阻值（欧姆）10K 精度±1%_ 功率1/4W 温度系数±50ppm/°C
2020-12-4MG725-12.5K-1%
MG725-12.5K-1%
2020-10-16MGA-31289-TR1G射频放大器原装热卖
MGA-31289-TR1G全新原装正品现货热卖，假一罚十！
2019-11-6
DdatasheetPDF页码索引
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