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MG10晶体管资料

MG10...400别名：MG10...400三极管、MG10...400晶体管、MG10...400晶体三极管
MG10...400生产厂家：日本东芝公司
MG10...400制作材料：Si-P+Darl
MG10...400性质：
MG10...400封装形式：
MG10...400极限工作电压：
MG10...400最大电流允许值：
MG10...400最大工作频率：<1MHZ或未知
MG10...400引脚数：
MG10...400最大耗散功率：
MG10...400放大倍数：
MG10...400图片代号：NO
MG10...400vtest：0
MG10...400htest：999900
MG10...400atest：0
MG10...400wtest：0

MG10...400代换 MG10...400用什么型号代替：

型号	功能描述	生产厂家企业	LOGO
MG100G2CL1	TECHNICAL DATA TRANSISTOR BJT POWER MODULE	TOSHIBA 东芝	TOSHIBA
MG100G2DL1	TECHNICAL DATA TRANSISTOR BJT POWER MODULE	TOSHIBA 东芝	TOSHIBA
MG100G2JL1	TECHNICAL DATA TRANSISTOR BJT POWER MODULE	TOSHIBA 东芝	TOSHIBA
MG100G2YK1	TRANSISTOR MODULES [WESTCODE] WESTCODE TRANSISTOR MODULES are designed for use in various types of motor control and other high power switching applications and consist of insulated type DARLINGTON TRANSISTORS. The electrodes are fully isolated from heat sink. Single ended electrode construction is used to greatly	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
MG100G2YL1	TRANSISTOR MODULES [WESTCODE] WESTCODE TRANSISTOR MODULES are designed for use in various types of motor control and other high power switching applications and consist of insulated type DARLINGTON TRANSISTORS. The electrodes are fully isolated from heat sink. Single ended electrode construction is used to greatly	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
MG100H2YL1	TRANSISTOR MODULES [WESTCODE] WESTCODE TRANSISTOR MODULES are designed for use in various types of motor control and other high power switching applications and consist of insulated type DARLINGTON TRANSISTORS. The electrodes are fully isolated from heat sink. Single ended electrode construction is used to greatly	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
MG100J1BS11	N CHANNEL IGBT (HIGH PWER SWITCHING, MOTOR CONTROL APPLICATIONS)	TOSHIBA 东芝	TOSHIBA
MG100J1ZS40	N CHANNEL IGBT (HIGH PWER SWITCHING, MOTOR CONTROL APPLICATIONS) High Power Switching Applications Motor Control Applications ● High input impedance ● High spee : tf = 0.35µs (max) trr = 0.15µs (max) ● Low saturation voltage : VCE (sat) = 3.5V (max) ● Enhancement-mode ● The electrodes are isolated from case.	TOSHIBA 东芝	TOSHIBA
MG100J6ES50	N CHANNEL IGBT (HIGH PWER SWITCHING, MOTOR CONTROL APPLICATIONS) High Power Switching Applications Motor Control Applications ● The electrodes are isolated from case. ● High input impedance. ● 6 IGBTs built into 1 package. ● Enhancement-mode. ● High speed : tf = 0.30µs (Max) (IC = 100A) trr = 0.15µs (Max) (IF = 100A) ● Low satura	TOSHIBA 东芝	TOSHIBA
MG100M2YK1	TRANSISTOR MODULES [WESTCODE] WESTCODE TRANSISTOR MODULES are designed for use in various types of motor control and other high power switching applications and consist of insulated type DARLINGTON TRANSISTORS. The electrodes are fully isolated from heat sink. Single ended electrode construction is used to greatly	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
MG100M2YL1	TRANSISTOR MODULES [WESTCODE] WESTCODE TRANSISTOR MODULES are designed for use in various types of motor control and other high power switching applications and consist of insulated type DARLINGTON TRANSISTORS. The electrodes are fully isolated from heat sink. Single ended electrode construction is used to greatly	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
MG100N2YK1	TRANSISTOR MODULES [WESTCODE] WESTCODE TRANSISTOR MODULES are designed for use in various types of motor control and other high power switching applications and consist of insulated type DARLINGTON TRANSISTORS. The electrodes are fully isolated from heat sink. Single ended electrode construction is used to greatly	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
MG100N2YL1	TRANSISTOR MODULES [WESTCODE] WESTCODE TRANSISTOR MODULES are designed for use in various types of motor control and other high power switching applications and consist of insulated type DARLINGTON TRANSISTORS. The electrodes are fully isolated from heat sink. Single ended electrode construction is used to greatly	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
MG100Q2YK1	TRANSISTOR MODULES [WESTCODE] WESTCODE TRANSISTOR MODULES are designed for use in various types of motor control and other high power switching applications and consist of insulated type DARLINGTON TRANSISTORS. The electrodes are fully isolated from heat sink. Single ended electrode construction is used to greatly	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
MG100Q2YL1	TRANSISTOR MODULES [WESTCODE] WESTCODE TRANSISTOR MODULES are designed for use in various types of motor control and other high power switching applications and consist of insulated type DARLINGTON TRANSISTORS. The electrodes are fully isolated from heat sink. Single ended electrode construction is used to greatly	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
MG100Q2YS11	high input impedance GTR Module Silicon N-Channel IGBT High Power Switching Applications Motor Control Applications	TOSHIBA 东芝	TOSHIBA
MG100Q2YS40	N CHANNEL IGBT (HIGH PWER SWITCHING, MOTOR CONTROL APPLICATIONS) High Power Switching applications Motor Control Applications ● High input impedance ● High speed : tf = 0.5µs (Max) trr = 0.5µs (Max) ● Low saturation voltage : VCE (sat) = 4.0V (Max) ● Enhancement-mode ● Includes a complete half bridge in one package. ● The electrodes are isolated from cas	TOSHIBA 东芝	TOSHIBA
MG100Q2YS42	N CHANNEL IGBT (HIGH PWER SWITCHING, MOTOR CONTROL APPLICATIONS) High Power Switching Applications Motor Control Applications ● High input impedance ● High speed : tf = 0.5µs (max) trr = 0.5µs (max) ● Low saturation voltage : VCE (sat) = 4.0V (max) ● Enhancement-mode ● Includes a complete half bridge in one package. ● The el	TOSHIBA 东芝	TOSHIBA
MG100Q2YS51	N CHANNEL IGBT (HIGH PWER SWITCHING, MOTOR CONTROL APPLICATIONS) High Power Switching Applications Motor Control Applications • High input impedance • High speed : tf = 0.3µs (Max) @Inductive load • Low saturation voltage : VCE (sat) = 3.6V (Max) • Enhancement-mode • Includes a complete half bridge in one package. • The electr	TOSHIBA 东芝	TOSHIBA
MG100Q2YS51A	N CHANNEL IGBT (HIGH PWER SWITCHING, MOTOR CONTROL APPLICATIONS) High Power Switching Applications Motor Control Applications • High Input Impedance • High Speed : tf = 0.3µs (Max) @Inductive load • Low Saturation Voltage : VCE (sat) = 3.6V (Max) • Enhancement-Mode • Includes a Complete Half Bridge in One Package	TOSHIBA 东芝	TOSHIBA
MG100Q2YS65H	TOSHIBA IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications ● High input impedance ● Enhancement-mode ● The electrodes are isolated from case.	TOSHIBA 东芝	TOSHIBA
MG1001	GUNN Diodes Cathode Heat Sink 文件：210.66 Kbytes Page：4 Pages	MICROSEMI 美高森美	MICROSEMI
MG1001	砷化镓霍尔元件	MATRIXSENS 矩阵光电	MATRIXSENS
MG1001-11	GUNN Diodes Cathode Heat Sink 文件：210.66 Kbytes Page：4 Pages	MICROSEMI 美高森美	MICROSEMI
MG1002-11	GUNN Diodes Cathode Heat Sink 文件：210.66 Kbytes Page：4 Pages	MICROSEMI 美高森美	MICROSEMI
MG1003-15	GUNN Diodes Cathode Heat Sink 文件：210.66 Kbytes Page：4 Pages	MICROSEMI 美高森美	MICROSEMI
MG1004	砷化镓霍尔元件	MATRIXSENS 矩阵光电	MATRIXSENS
MG1004-15	GUNN Diodes Cathode Heat Sink 文件：210.66 Kbytes Page：4 Pages	MICROSEMI 美高森美	MICROSEMI
MG1005_MDS	Ferrite Chip Beads 文件：206.52 Kbytes Page：1 Pages	BOURNS 伯恩斯	BOURNS
MG1005-11	GUNN Diodes Cathode Heat Sink 文件：210.66 Kbytes Page：4 Pages	MICROSEMI 美高森美	MICROSEMI
MG1006-11	GUNN Diodes Cathode Heat Sink 文件：210.66 Kbytes Page：4 Pages	MICROSEMI 美高森美	MICROSEMI
MG1006-M11	封装/外壳：接线柱包装：托盘描述：GAAS GUNN EPI DOWN HERMETIC PILL 分立半导体产品二极管 - 射频	MICROCHIP 微芯科技	MICROCHIP
MG1007-15	GUNN Diodes Cathode Heat Sink 文件：210.66 Kbytes Page：4 Pages	MICROSEMI 美高森美	MICROSEMI
MG1007-42	封装/外壳：接线柱包装：托盘描述：GAAS GUNN EPI DOWN HERMETIC STUD 分立半导体产品二极管 - 射频	MICROCHIP 微芯科技	MICROCHIP
MG1007-42	PIN 二极管	MICROCHIP 微芯科技	MICROCHIP
MG1008-15	GUNN Diodes Cathode Heat Sink 文件：210.66 Kbytes Page：4 Pages	MICROSEMI 美高森美	MICROSEMI
MG1009-11	GUNN Diodes Cathode Heat Sink 文件：210.66 Kbytes Page：4 Pages	MICROSEMI 美高森美	MICROSEMI
MG100J7KS50	N CHANNEL IGBT (HIGH PWER SWITCHING, MOTOR CONTROL APPLICATIONS) 文件：171.65 Kbytes Page：4 Pages	TOSHIBA 东芝	TOSHIBA
MG100Q1JS40	N CHANNEL IGBT (HIGH PWER SWITCHING, MOTOR CONTROL APPLICATIONS) 文件：251.45 Kbytes Page：5 Pages	TOSHIBA 东芝	TOSHIBA
MG100Q1ZS40	N CHANNEL IGBT (HIGH PWER SWITCHING, MOTOR CONTROL APPLICATIONS) 文件：252.34 Kbytes Page：5 Pages	TOSHIBA 东芝	TOSHIBA
MG100Q1ZS50	N CHANNEL IGBT (HIGH PWER SWITCHING, MOTOR CONTROL APPLICATIONS) 文件：299.67 Kbytes Page：6 Pages	TOSHIBA 东芝	TOSHIBA
MG1010-11	GUNN Diodes Cathode Heat Sink 文件：210.66 Kbytes Page：4 Pages	MICROSEMI 美高森美	MICROSEMI
MG1011-15	GUNN Diodes Cathode Heat Sink 文件：210.66 Kbytes Page：4 Pages	MICROSEMI 美高森美	MICROSEMI
MG1012-15	GUNN Diodes Cathode Heat Sink 文件：210.66 Kbytes Page：4 Pages	MICROSEMI 美高森美	MICROSEMI
MG1013-16	GUNN Diodes Cathode Heat Sink 文件：210.66 Kbytes Page：4 Pages	MICROSEMI 美高森美	MICROSEMI
MG1014-16	GUNN Diodes Cathode Heat Sink 文件：210.66 Kbytes Page：4 Pages	MICROSEMI 美高森美	MICROSEMI
MG1015-16	GUNN Diodes Cathode Heat Sink 文件：210.66 Kbytes Page：4 Pages	MICROSEMI 美高森美	MICROSEMI
MG1016-17	GUNN Diodes Cathode Heat Sink 文件：210.66 Kbytes Page：4 Pages	MICROSEMI 美高森美	MICROSEMI
MG1017-16	GUNN Diodes Cathode Heat Sink 文件：210.66 Kbytes Page：4 Pages	MICROSEMI 美高森美	MICROSEMI
MG1018-16	GUNN Diodes Cathode Heat Sink 文件：210.66 Kbytes Page：4 Pages	MICROSEMI 美高森美	MICROSEMI
MG1019-16	GUNN Diodes Cathode Heat Sink 文件：210.66 Kbytes Page：4 Pages	MICROSEMI 美高森美	MICROSEMI
MG1020-16	GUNN Diodes Cathode Heat Sink 文件：210.66 Kbytes Page：4 Pages	MICROSEMI 美高森美	MICROSEMI
MG1021-16	GUNN Diodes Cathode Heat Sink 文件：210.66 Kbytes Page：4 Pages	MICROSEMI 美高森美	MICROSEMI
MG1022-16	GUNN Diodes Cathode Heat Sink 文件：210.66 Kbytes Page：4 Pages	MICROSEMI 美高森美	MICROSEMI
MG1023-16	GUNN Diodes Cathode Heat Sink 文件：210.66 Kbytes Page：4 Pages	MICROSEMI 美高森美	MICROSEMI
MG1024-16	GUNN Diodes Cathode Heat Sink 文件：210.66 Kbytes Page：4 Pages	MICROSEMI 美高森美	MICROSEMI
MG1025-16	GUNN Diodes Cathode Heat Sink 文件：210.66 Kbytes Page：4 Pages	MICROSEMI 美高森美	MICROSEMI
MG1034-15	GUNN Diodes Cathode Heat Sink 文件：210.66 Kbytes Page：4 Pages	MICROSEMI 美高森美	MICROSEMI
MG1036-16	GUNN Diodes Cathode Heat Sink 文件：210.66 Kbytes Page：4 Pages	MICROSEMI 美高森美	MICROSEMI
MG1037-16	GUNN Diodes Cathode Heat Sink 文件：210.66 Kbytes Page：4 Pages	MICROSEMI 美高森美	MICROSEMI

MG10产品属性

类型
描述
型号
MG10
制造商
Cornell Dubilier Electronics
功能描述
Bushing Mount Wirewound Control

MG10供应商更多...

更新时间：2026-3-15 9:04:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
中天科工半导体（深圳）有限公司	MG100Q2YS42(EP)	TOSHIBA/东芝	专业模块	MODULE	8513	模块原装主营-可开原型号增税票	询价
深圳市勤思达科技有限公司	MG100Q2YS42	东芝			100	原装现货,价格优惠	询价
深圳市昌和盛利电子有限公司	MG100Q2YS42	IGBT	26+	模块	3562	代理全系列销售, 全新原装正品,价格优势,长期供应,量大可订	询价
深圳市亿智腾科技有限公司	MG100Q2YS42	TOSHIBA	24+	模块	6430	原装现货/欢迎来电咨询	询价
深圳市诚利顺电子科技有限公司	MG100Q2YS42	TOSHIBA	2018	模块	300	十七年VIP会员,诚信经营，一手货源，原装正品可零售！	询价
深圳市弘为电子有限公司	MG100Q2YS42	TOSHIBA	24+	MODULE	128	原装现货假一罚十	询价
上海意淼电子科技有限公司	MG100Q2YS42	SANYO	23+	QFP	12000	全新原装假一赔十	询价
深圳市赛尔通科技有限公司	MG100Q2YS42	IGBT	23+	模块	69		询价
深圳市毅创腾电子科技有限公司	MG100Q2YS42	TOSHIBA	23+	模块	900	全新原装正品,量大可订货!可开17%增值票!价格优势!	询价
深圳市一线半导体有限公司	MG100Q2YS42		24+		40	正反极配对	询价

MG10芯片相关品牌

MG10规格书下载地址

MG10参数引脚图相关

MG10数据表相关新闻

MG802C256Q-8
MG802C256Q-8
2023-10-31
MF-MSHT110KX-2
进口代理
2022-7-12
MF-SM050-2
MF-SM050-2
2020-12-29
MFR0W4F1002A50
属性参数值商品目录金属膜电阻阻值（欧姆） 10K 精度 ±1%_ 功率 1/4W 温度系数 ±50ppm/°C属性参数值商品目录金属膜电阻阻值（欧姆） 10K 精度 ±1%_ 功率 1/4W 温度系数 ±50ppm/°C
2020-12-4
MG725-12.5K-1%
MG725-12.5K-1%
2020-10-16
MGA-31289-TR1G射频放大器原装热卖
MGA-31289-TR1G全新原装正品现货热卖，假一罚十！
2019-11-6

DdatasheetPDF页码索引

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找IC，尽在114IC

MG10晶体管资料

MG10产品属性

MG10供应商更多...

MG10芯片相关品牌

MG10规格书下载地址

MG10参数引脚图相关

MG10数据表相关新闻

MG802C256Q-8

MF-MSHT110KX-2

MF-SM050-2

MFR0W4F1002A50

MG725-12.5K-1%

MGA-31289-TR1G射频放大器原装热卖

DdatasheetPDF页码索引