金属氧化层半导体场效应晶体管

1.2A, 650V N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 1N65 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in the high speed switching applications of po

GOLD BONDED DIODES

[VMI] 200 V - 1,000 V Single Phase Bridge 22.0 A - 25.0 A Forward Current 70 ns - 3000 ns Recovery Time

Drain Current ID= 1.2A@ TC=25C

·FEATURES • Drain Current ID= 1.2A@ TC=25℃ • Drain Source Voltage- : VDSS= 650V(Min) • Static Drain-Source On-Resistance : RDS(on) = 12.5Ω (Max) • Fast Switching ·APPLICATIONS • Switching power supplies,converters,AC and DC motor controls

N-CHANNEL MOSFET

DESCRIPTION 1N60 1N65 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power su

N-CHANNEL POWER MOSFET

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