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位置：首页 > IC中文资料第6594页 > 1N65

1N65价格

参考价格：￥66.1730

型号：1N6536 品牌：Microsemi Commercial Com 备注：这里有1N65多少钱，2024年最近7天走势，今日出价，今日竞价，1N65批发/采购报价，1N65行情走势销售排行榜，1N65报价。
型号 功能描述 生产厂家&企业 LOGO 操作
1N65

GOLDBONDEDDIODES

[VMI] 200V-1,000VSinglePhaseBridge 22.0A-25.0AForwardCurrent 70ns-3000nsRecoveryTime

ETCList of Unclassifed Manufacturers

未分类制造商

ETC
1N65

1.2A,650VN-CHANNELPOWERMOSFET

DESCRIPTION TheUTC1N65isahighvoltagepowerMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedinthehighspeedswitchingapplicationsofpo

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC
1N65

N-CHANNELMOSFET

DESCRIPTION 1N601N65isahighvoltageMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsinpowersu

ZSELECZibo Seno Electronic Engineering Co.,Ltd

淄博圣诺电子淄博圣诺电子工程有限公司

ZSELEC
1N65

DrainCurrentID=1.2A@TC=25C

·FEATURES •DrainCurrentID=1.2A@TC=25℃ •DrainSourceVoltage-:VDSS=650V(Min) •StaticDrain-SourceOn-Resistance:RDS(on)=12.5Ω(Max) •FastSwitching ·APPLICATIONS •Switchingpowersupplies,converters,ACandDCmotorcontrols

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
1N65

N-CHANNELPOWERMOSFET

文件：717.14 Kbytes Page：9 Pages

UMWUMW

友台友台半导体

UMW
1N6505

GENERALPURPOSESILICONDIODES

GENERALPURPOSESILICONDIODES ThisdeviceisaSiliconDoublePlugDiodeforgeneralpurposeuseincomputer,industrialandmilitaryapplications.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI
1N6506

MONOLITHICAIRISOLATEDDIODEARRAY

DESCRIPTION Theselowcapacitancediodearrayswithcommoncathodearemultiple,discrete,isolatedjunctionsfabricatedbyaplanarprocessandmountedina10-PINpackageforuseassteeringdiodesprotectinguptoeightI/OportsfromESD,EFT,orsurgebydirectingthemtothepositivesideo

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi
1N6507

MONOLITHICAIRISOLATEDDIODEARRAY

DESCRIPTION Theselowcapacitancediodearrayswithcommonanodearemultiple,discrete,isolatedjunctionsfabricatedbyaplanarprocessandmountedina10-PINpackageforuseassteeringdiodesprotectinguptoeightI/OportsfromESD,EFT,orsurgebydirectingthemtoground(seefigure

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi
1N6508

MONOLITHICAIRISOLATEDDIODEARRAY

DESCRIPTION Theselowcapacitancediodearraysaremultiple,discrete,isolatedjunctionsfabricatedbyaplanarprocessandmountedina14-PINceramicDIPpackageforuseassteeringdiodesprotectinguptoeightI/OportsfromESD,EFT,orsurgebydirectingthemtothepositivesideofthepo

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi
1N6508

DIODEARRAYPRODUCTSPECIFICATION

DESCRIPTION Theselowcapacitancediodearraysaremultiple,discrete,isolatedjunctionsfabricatedbyaplanarprocessandmountedina14-PINceramicDIPpackageforuseassteeringdiodesprotectinguptoeightI/OportsfromESD,EFT,orsurgebydirectingthemtothepositivesideofthepo

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi
1N6508

ISOLATEDDIODEARRAY

Features: •Protectsupto8I/OPorts •Isolateddiodeseliminatecrosstalk •HighDensityPackaging •HighBreakdownVoltage;HighSpeedSwitching(

SENSITRON

Sensitron

SENSITRON
1N6509

DIODEARRAYCIRCUITS

DESCRIPTION TheLinfinityseriesofdiodearraysfeaturehighbreakdown,highspeeddiodesinavarietyofconfigurations. Eacharrayconfigurationconsistsofeithercommonanodediodes,commoncathodediodes,oracombinationofcommonanodeandcommoncathodediodes. Individualdiodeswithin

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi
1N6509

MONOLITHICAIRISOLATEDDIODEARRAY

DESCRIPTION TheLinfinityseriesofdiodearraysfeaturehighbreakdown,highspeeddiodesinavarietyofconfigurations. Eacharrayconfigurationconsistsofeithercommonanodediodes,commoncathodediodes,oracombinationofcommonanodeandcommoncathodediodes. Individualdiodeswithin

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi
1N6510

DIODEARRAYCIRCUITS

DESCRIPTION TheSG6100/SG6511andSG6101/SG6510diodearraysaremonolithic,highbreakdown,fastswitchingspeeddiodearrays.TheSG6100/SG6511isconfiguredwith7straightthroughdiodes,whiletheSG6101/SG6510has8straightthroughdiodes. FEATURES •75Vminimumbreakdownvoltage

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi
1N6510

MONOLITHICAIRISOLATEDDIODEARRAY

DESCRIPTION Theselowcapacitancediodearraysaremultiple,discrete,isolatedjunctionsfabricatedbyaplanarprocessandmountedina16-PINceramicflatpackforuseassteeringdiodesprotectinguptoeightI/OportsfromESD,EFT,orsurgebydirectingthemeithertothepositivesideof

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi
1N6511

MONOLITHICAIRISOLATEDDIODEARRAY

DESCRIPTION Theselowcapacitancediodearraysaremultiple,discrete,isolatedjunctionsfabricatedbyaplanarprocessandmountedina14-PINceramicDIPpackageforuseassteeringdiodesprotectinguptosevenI/OportsfromESD,EFT,orsurgebydirectingthemeithertothepositivesideofthe

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi
1N6511

DIODEARRAYCIRCUITS

DESCRIPTION TheSG6100/SG6511andSG6101/SG6510diodearraysaremonolithic,highbreakdown,fastswitchingspeeddiodearrays.TheSG6100/SG6511isconfiguredwith7straightthroughdiodes,whiletheSG6101/SG6510has8straightthroughdiodes. FEATURES •75Vminimumbreakdownvoltage

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi
1N6512

70NSRECOVERY,AXIALLEADED,HERMETIC

HIGHVOLTAGERECTIFIERS 70nsRecovery•AxialLeaded•Hermetic

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI
1N6512

ULTRAFASTRECOVERYHIGHVOLTAGERECTIFIER

FEATURES: ●Fastrecovery:70nsecmaximum ●PIVto10KV ●Hermeticallysealedaxialpackage ●Void-freeceramicfritglassconstruction ●HightemperatureCategoryIeutecticmetallurgicalbond ●Excellentthermalshockperformance ●Foruseinhighvoltagesystems ●175°Cmaximumoperat

SSDI

SSDI

SSDI
1N6512

ULTRAFASTRECOVERYHIGHVOLTAGERECTIFIER

FEATURES: ●Fastrecovery:70nsecmaximum ●PIVto10KV ●Hermeticallysealedaxialandsurfacemountpackage ●Void-freeceramicfritglassconstruction ●HightemperatureCategoryIeutecticmetallurgicalbond ●Excellentthermalshockperformance ●Foruseinhighvoltagesystems ●17

SSDI

SSDI

SSDI
1N6512SMS

ULTRAFASTRECOVERYHIGHVOLTAGERECTIFIER

FEATURES: ●Fastrecovery:70nsecmaximum ●PIVto10KV ●Hermeticallysealedaxialandsurfacemountpackage ●Void-freeceramicfritglassconstruction ●HightemperatureCategoryIeutecticmetallurgicalbond ●Excellentthermalshockperformance ●Foruseinhighvoltagesystems ●17

SSDI

SSDI

SSDI
1N6512U

SURFACEMOUNTRECTIFIERS70NSRECOVERY,HERMETIC,JANTX,JANTXV

70nsRecoveryHermeticJANTXJANTXV

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI
1N6513

ULTRAFASTRECOVERYHIGHVOLTAGERECTIFIER

FEATURES: ●Fastrecovery:70nsecmaximum ●PIVto10KV ●Hermeticallysealedaxialpackage ●Void-freeceramicfritglassconstruction ●HightemperatureCategoryIeutecticmetallurgicalbond ●Excellentthermalshockperformance ●Foruseinhighvoltagesystems ●175°Cmaximumoperat

SSDI

SSDI

SSDI
1N6513

0.5A-2.0ARECTIFIERS

2,000V-10,000Vworkingreversevoltage 70nsRecoveryTime OperatingTemperature=-65to+175°C StorageTemperature=-65to+200°C

DIGITRON

Digitron Semiconductors

DIGITRON
1N6513

ULTRAFASTRECOVERYHIGHVOLTAGERECTIFIER

FEATURES: ●Fastrecovery:70nsecmaximum ●PIVto10KV ●Hermeticallysealedaxialandsurfacemountpackage ●Void-freeceramicfritglassconstruction ●HightemperatureCategoryIeutecticmetallurgicalbond ●Excellentthermalshockperformance ●Foruseinhighvoltagesystems ●17

SSDI

SSDI

SSDI
1N6513

AxialLeadedRectifiers

AxialLeadedRectifiers

AMMSEMI

American Microsemiconductor

AMMSEMI
1N6513

2,000V-5,000VRectifiers

[VOLTAGEMULTIPLIERSINC.] 2,000V-5,000VRectifiers 2.0A-5.0AForwardCurrent70nsRecoveryTime SURFACEMOUNTHERMETICALLYSEALED

ETCList of Unclassifed Manufacturers

未分类制造商

ETC
1N6513

2,000V-10,000VRectifiers0.5A-2.0AForwardCurrent70nsRecoveryTime

[VOLTAGEMULTIPLIERSINC.] 2,000V-10,000VRectifiers 0.5A-2.0AForwardCurrent70nsRecoveryTime AXIALLEADEDHERMETICALLYSEALEDMIL-PRF-19500/575

ETCList of Unclassifed Manufacturers

未分类制造商

ETC
1N6513

SpiceModel

HighVoltageDiodes-AxialLead 0.5A-2.0A•70ns•Hermetic•JANTX•JANTXV

VMI

Voltage Multipliers

VMI
1N6513

70NSRECOVERY,AXIALLEADED,HERMETIC

HIGHVOLTAGERECTIFIERS 70nsRecovery•AxialLeaded•Hermetic

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI
1N6513LL

HighVoltageRectifiers-FormedLead

HighVoltageRectifiers-FormedLead ​​​​​​​ 0.8A-3.5A•30ns-70ns•Hermetic

VMI

Voltage Multipliers

VMI
1N6513LL

2,000V-5,000VRectifiers

HighVoltageRectifiers-FormedLead 0.8A-3.5A•30ns-70ns•Hermetic

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI
1N6513SMS

ULTRAFASTRECOVERYHIGHVOLTAGERECTIFIER

FEATURES: ●Fastrecovery:70nsecmaximum ●PIVto10KV ●Hermeticallysealedaxialandsurfacemountpackage ●Void-freeceramicfritglassconstruction ●HightemperatureCategoryIeutecticmetallurgicalbond ●Excellentthermalshockperformance ●Foruseinhighvoltagesystems ●17

SSDI

SSDI

SSDI
1N6513U

SURFACEMOUNTRECTIFIERS70NSRECOVERY,HERMETIC,JANTX,JANTXV

70nsRecoveryHermeticJANTXJANTXV

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI
1N6513U

2,000V-5,000VRectifiers0.5A-1.5AForwardCurrent30ns-50nsRecoveryTime

2,000V-5,000VRectifiers 2.0A-5.0AForwardCurrent70nsRecoveryTime SURFACEMOUNTHERMETICALLYSEALED

VMI

Voltage Multipliers

VMI
1N6513U

2,000V-5,000VRectifiers

[VOLTAGEMULTIPLIERSINC.] 2,000V-5,000VRectifiers 2.0A-5.0AForwardCurrent70nsRecoveryTime SURFACEMOUNTHERMETICALLYSEALED

ETCList of Unclassifed Manufacturers

未分类制造商

ETC
1N6513US

HIGHVOLTAGEDIODES-SURFACEMOUNT

HIGHVOLTAGEDIODES-SURFACEMOUNT

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI
1N6514

70NSRECOVERY,AXIALLEADED,HERMETIC

HIGHVOLTAGERECTIFIERS 70nsRecovery•AxialLeaded•Hermetic

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI
1N6514

ULTRAFASTRECOVERYHIGHVOLTAGERECTIFIER

FEATURES: ●Fastrecovery:70nsecmaximum ●PIVto10KV ●Hermeticallysealedaxialandsurfacemountpackage ●Void-freeceramicfritglassconstruction ●HightemperatureCategoryIeutecticmetallurgicalbond ●Excellentthermalshockperformance ●Foruseinhighvoltagesystems ●17

SSDI

SSDI

SSDI
1N6514

ULTRAFASTRECOVERYHIGHVOLTAGERECTIFIER

FEATURES: ●Fastrecovery:70nsecmaximum ●PIVto10KV ●Hermeticallysealedaxialpackage ●Void-freeceramicfritglassconstruction ●HightemperatureCategoryIeutecticmetallurgicalbond ●Excellentthermalshockperformance ●Foruseinhighvoltagesystems ●175°Cmaximumoperat

SSDI

SSDI

SSDI
1N6514SMS

ULTRAFASTRECOVERYHIGHVOLTAGERECTIFIER

FEATURES: ●Fastrecovery:70nsecmaximum ●PIVto10KV ●Hermeticallysealedaxialandsurfacemountpackage ●Void-freeceramicfritglassconstruction ●HightemperatureCategoryIeutecticmetallurgicalbond ●Excellentthermalshockperformance ●Foruseinhighvoltagesystems ●17

SSDI

SSDI

SSDI
1N6514U

SURFACEMOUNTRECTIFIERS70NSRECOVERY,HERMETIC,JANTX,JANTXV

70nsRecoveryHermeticJANTXJANTXV

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI
1N6515

70NSRECOVERY,AXIALLEADED,HERMETIC

HIGHVOLTAGERECTIFIERS 70nsRecovery•AxialLeaded•Hermetic

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI
1N6515

2,000V-10,000VRectifiers0.5A-2.0AForwardCurrent70nsRecoveryTime

[VOLTAGEMULTIPLIERSINC.] 2,000V-10,000VRectifiers 0.5A-2.0AForwardCurrent70nsRecoveryTime AXIALLEADEDHERMETICALLYSEALEDMIL-PRF-19500/575

ETCList of Unclassifed Manufacturers

未分类制造商

ETC
1N6515

SpiceModel

HighVoltageDiodes-AxialLead 0.5A-2.0A•70ns•Hermetic•JANTX•JANTXV

VMI

Voltage Multipliers

VMI
1N6515

ULTRAFASTRECOVERYHIGHVOLTAGERECTIFIER

FEATURES: ●Fastrecovery:70nsecmaximum ●PIVto10KV ●Hermeticallysealedaxialpackage ●Void-freeceramicfritglassconstruction ●HightemperatureCategoryIeutecticmetallurgicalbond ●Excellentthermalshockperformance ●Foruseinhighvoltagesystems ●175°Cmaximumoperat

SSDI

SSDI

SSDI
1N6515

AxialLeadedRectifiers

AxialLeadedRectifiers

AMMSEMI

American Microsemiconductor

AMMSEMI
1N6515

ULTRAFASTRECOVERYHIGHVOLTAGERECTIFIER

FEATURES: ●Fastrecovery:70nsecmaximum ●PIVto10KV ●Hermeticallysealedaxialandsurfacemountpackage ●Void-freeceramicfritglassconstruction ●HightemperatureCategoryIeutecticmetallurgicalbond ●Excellentthermalshockperformance ●Foruseinhighvoltagesystems ●17

SSDI

SSDI

SSDI
1N6515

0.5A-2.0ARECTIFIERS

2,000V-10,000Vworkingreversevoltage 70nsRecoveryTime OperatingTemperature=-65to+175°C StorageTemperature=-65to+200°C

DIGITRON

Digitron Semiconductors

DIGITRON
1N6515LL

2,000V-5,000VRectifiers

HighVoltageRectifiers-FormedLead 0.8A-3.5A•30ns-70ns•Hermetic

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI
1N6515LL

HighVoltageRectifiers-FormedLead

HighVoltageRectifiers-FormedLead ​​​​​​​ 0.8A-3.5A•30ns-70ns•Hermetic

VMI

Voltage Multipliers

VMI
1N6515SMS

ULTRAFASTRECOVERYHIGHVOLTAGERECTIFIER

FEATURES: ●Fastrecovery:70nsecmaximum ●PIVto10KV ●Hermeticallysealedaxialandsurfacemountpackage ●Void-freeceramicfritglassconstruction ●HightemperatureCategoryIeutecticmetallurgicalbond ●Excellentthermalshockperformance ●Foruseinhighvoltagesystems ●17

SSDI

SSDI

SSDI
1N6515U

2,000V-5,000VRectifiers

[VOLTAGEMULTIPLIERSINC.] 2,000V-5,000VRectifiers 2.0A-5.0AForwardCurrent70nsRecoveryTime SURFACEMOUNTHERMETICALLYSEALED

ETCList of Unclassifed Manufacturers

未分类制造商

ETC
1N6515U

SURFACEMOUNTRECTIFIERS70NSRECOVERY,HERMETIC,JANTX,JANTXV

70nsRecoveryHermeticJANTXJANTXV

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI
1N6515US

HIGHVOLTAGEDIODES-SURFACEMOUNT

HIGHVOLTAGEDIODES-SURFACEMOUNT

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI
1N6516

70NSRECOVERY,AXIALLEADED,HERMETIC

HIGHVOLTAGERECTIFIERS 70nsRecovery•AxialLeaded•Hermetic

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI
1N6516

ULTRAFASTRECOVERYHIGHVOLTAGERECTIFIER

FEATURES: ●Fastrecovery:70nsecmaximum ●PIVto10KV ●Hermeticallysealedaxialandsurfacemountpackage ●Void-freeceramicfritglassconstruction ●HightemperatureCategoryIeutecticmetallurgicalbond ●Excellentthermalshockperformance ●Foruseinhighvoltagesystems ●17

SSDI

SSDI

SSDI
1N6516

ULTRAFASTRECOVERYHIGHVOLTAGERECTIFIER

FEATURES: ●Fastrecovery:70nsecmaximum ●PIVto10KV ●Hermeticallysealedaxialpackage ●Void-freeceramicfritglassconstruction ●HightemperatureCategoryIeutecticmetallurgicalbond ●Excellentthermalshockperformance ●Foruseinhighvoltagesystems ●175°Cmaximumoperat

SSDI

SSDI

SSDI
1N6516SMS

ULTRAFASTRECOVERYHIGHVOLTAGERECTIFIER

FEATURES: ●Fastrecovery:70nsecmaximum ●PIVto10KV ●Hermeticallysealedaxialandsurfacemountpackage ●Void-freeceramicfritglassconstruction ●HightemperatureCategoryIeutecticmetallurgicalbond ●Excellentthermalshockperformance ●Foruseinhighvoltagesystems ●17

SSDI

SSDI

SSDI
1N6516U

SURFACEMOUNTRECTIFIERS70NSRECOVERY,HERMETIC,JANTX,JANTXV

70nsRecoveryHermeticJANTXJANTXV

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

1N65产品属性

  • 类型

    描述

  • 型号

    1N65

  • 制造商

    UTC-IC

  • 制造商全称

    UTC-IC

  • 功能描述

    1.2A, 650V N-CHANNEL POWER MOSFET

1N65供应商更多...

更新时间：2024-4-30 20:45:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市晴轩时代电子有限公司
1N6515
VMI
专业军工
NA
1000
只做原装正品
询价
深圳市弘扬芯城科技有限公司
1N65G-AA3-R
UTC(友顺)
24+
SOT-223
5000
诚信服务,绝对原装原盘。
询价
深圳市振宏微科技有限公司
1N6528
VMI
23+
NA
114
专做原装正品,假一罚百!
询价
贸泽芯城（深圳）电子科技有限公司
1N65L-TN3-R
SK
2021+
DFN5060-8
368000
原厂授权代理,海外优势订货渠道。可提供大量库存,详
询价
深圳市科恒伟业电子有限公司
1N6529
SMD
21+
2
9852
只做原装正品现货!或订货假一赔十!
询价
绿盛电子(香港)有限公司
1N65L
UTC
2018+
T0-251
26976
代理原装现货/特价热卖!
询价
深圳市毅创弘电子科技有限公司
1N6508
SG
17+
DIP
60
原装正品 专营军工
询价
深圳市华斯顿科技有限公司
1N65/CJU01N65B
长电
22+23+
TO-252
23828
绝对原装正品全新进口深圳现货
询价
深圳市高捷芯城科技有限公司
1N6509
Microsemi(美高森美)
23+
DIP-14
907
代工代料,一站式配套服务。
询价
深圳市得捷芯城科技有限公司
1N6515LL
VMI
23+
NA/
6206
原装现货,当天可交货,原型号开票
询价

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    全新原装进口，质量保证，宇集芯一对一服务您放心的品质，急速发货，VMI提供世界上最全套的高压二极管。轴向引线和SMD二极管的范围从2kV到20kV。所有的晶圆都是在我们的设备中掺杂、扩散和金属化的。我们提供广泛的测试，以确保我们的客户收到最/高质量的二极管。

    2021-5-18

  • 1N6513 全套表面贴装二极管

    全新原装进口，质量保证，宇集芯您放心的品质，VMI提供世界上最全套的高压二极管。轴向引线和SMD二极管的范围从2kV到20kV。所有的晶圆都是在我们的设备中掺杂、扩散和金属化的。我们提供广泛的测试，以确保我们的客户收到最/高质量的二极管。

    2021-5-14

  • 1N6529 全套中高压二极管

    全新原装进口，质量保证，宇集芯您放心的品质，VMI提供世界上最全套的高压二极管。轴向引线和SMD二极管的范围从2kV到20kV。所有的晶圆都是在我们的设备中掺杂、扩散和金属化的。我们提供广泛的测试，以确保我们的客户收到最/高质量的二极管。

    2021-5-13

  • 1N6117代理渠道 ，进口原装

    1N6117 代理渠道，进口原装

    2020-10-19

  • 1N5924BRLG，1N5927BG，1N6295AG，1N6296A，1N6297A，1N6298ARL4

    1N5924BRLG，1N5927BG，1N6295AG，1N6296A，1N6297A，1N6298ARL4

    2020-3-10

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