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1N65价格
参考价格：￥66.1730
型号：1N6536 品牌：Microsemi Commercial Com 备注：这里有1N65多少钱，2025年最近7天走势，今日出价，今日竞价，1N65批发/采购报价，1N65行情走势销售排行榜，1N65报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
1N65 | N-CHANNEL MOSFET DESCRIPTION 1N60 1N65 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power su | ZSELEC 淄博圣诺 |   | |
1N65 | Drain Current ID= 1.2A@ TC=25C ·FEATURES • Drain Current ID= 1.2A@ TC=25℃ • Drain Source Voltage- : VDSS= 650V(Min) • Static Drain-Source On-Resistance : RDS(on) = 12.5Ω (Max) • Fast Switching ·APPLICATIONS • Switching power supplies,converters,AC and DC motor controls | ISC 无锡固电 | | |
1N65 | 650V N-Channel Power MOSFET Features RDS(ON) | SY 顺烨电子 | | |
1N65 | GOLD BONDED DIODES [VMI] 200 V - 1,000 V Single Phase Bridge 22.0 A - 25.0 A Forward Current 70 ns - 3000 ns Recovery Time | ETCList of Unclassifed Manufacturers 未分类制造商 | | |
1N65 | 1.2A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 1N65 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in the high speed switching applications of po | UTC 友顺 | | |
1N65 | N-CHANNEL POWER MOSFET 文件：717.14 Kbytes Page：9 Pages | UMW 友台半导体 | | |
1N65 | 1.2A , 650V N-CHANNEL POWER MOSFET | UTC 友顺 | | |
GENERAL PURPOSE SILICON DIODES GENERAL PURPOSE SILICON DIODES This device is a Silicon Double Plug Diode for general purpose use in computer, industrial and military applications. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
MONOLITHIC AIR ISOLATED DIODE ARRAY DESCRIPTION These low capacitance diode arrays with common cathode are multiple, discrete, isolated junctions fabricated by a planar process and mounted in a 10-PIN package for use as steering diodes protecting up to eight I/O ports from ESD, EFT, or surge by directing them to the positive side o | Microsemi 美高森美 | | ||
MONOLITHIC AIR ISOLATED DIODE ARRAY DESCRIPTION These low capacitance diode arrays with common anode are multiple, discrete, isolated junctions fabricated by a planar process and mounted in a 10-PIN package for use as steering diodes protecting up to eight I/O ports from ESD, EFT, or surge by directing them to ground (see figure | Microsemi 美高森美 | | ||
MONOLITHIC AIR ISOLATED DIODE ARRAY DESCRIPTION These low capacitance diode arrays are multiple, discrete, isolated junctions fabricated by a planar process and mounted in a 14-PIN ceramic DIP package for use as steering diodes protecting up to eight I/O ports from ESD, EFT, or surge by directing them to the positive side of the po | Microsemi 美高森美 | | ||
DIODE ARRAY PRODUCT SPECIFICATION DESCRIPTION These low capacitance diode arrays are multiple, discrete, isolated junctions fabricated by a planar process and mounted in a 14-PIN ceramic DIP package for use as steering diodes protecting up to eight I/O ports from ESD, EFT, or surge by directing them to the positive side of the po | Microsemi 美高森美 | | ||
ISOLATED DIODE ARRAY Features: • Protects up to 8 I/O Ports • Isolated diodes eliminate crosstalk • High Density Packaging • High Breakdown Voltage; High Speed Switching ( | SENSITRON | | ||
DIODE ARRAY CIRCUITS DESCRIPTION The Linfinity series of diode arrays feature high breakdown, high speed diodes in a variety of configurations. Each array configuration consists of either common anode diodes, common cathode diodes, or a combination of common anode and common cathode diodes. Individual diodes within | Microsemi 美高森美 | | ||
MONOLITHIC AIR ISOLATED DIODE ARRAY DESCRIPTION The Linfinity series of diode arrays feature high breakdown, high speed diodes in a variety of configurations. Each array configuration consists of either common anode diodes, common cathode diodes, or a combination of common anode and common cathode diodes. Individual diodes within | Microsemi 美高森美 | | ||
DIODE ARRAY CIRCUITS DESCRIPTION The SG6100/SG6511 and SG6101/SG6510 diode arrays are monolithic, high breakdown, fast switching speed diode arrays. The SG6100/SG6511 is configured with 7 straight through diodes, while the SG6101/SG6510 has 8 straight through diodes. FEATURES • 75V minimum breakdown voltage | Microsemi 美高森美 | | ||
MONOLITHIC AIR ISOLATED DIODE ARRAY DESCRIPTION These low capacitance diode arrays are multiple, discrete, isolated junctions fabricated by a planar process and mounted in a 16-PIN ceramic flat pack for use as steering diodes protecting up to eight I/O ports from ESD, EFT, or surge by directing them either to the positive side of | Microsemi 美高森美 | | ||
MONOLITHIC AIR ISOLATED DIODE ARRAY DESCRIPTION These lowcapacitance diode arrays are multiple, discrete, isolatedjunctions fabricated by a planar process and mounted in a 14-PINceramic DIP packagefor useas steering diodes protecting up to seven I/O ports from ESD, EFT,or surge by directing them either to the positive sideof the | Microsemi 美高森美 | | ||
DIODE ARRAY CIRCUITS DESCRIPTION The SG6100/SG6511 and SG6101/SG6510 diode arrays are monolithic, high breakdown, fast switching speed diode arrays. The SG6100/SG6511 is configured with 7 straight through diodes, while the SG6101/SG6510 has 8 straight through diodes. FEATURES • 75V minimum breakdown voltage | Microsemi 美高森美 | | ||
ULTRA FAST RECOVERY HIGH VOLTAGE RECTIFIER FEATURES: ● Fast recovery: 70 nsec maximum ● PIV to 10 KV ● Hermetically sealed axial and surface mount package ● Void-free ceramic frit glass construction ● High temperature Category I eutectic metallurgical bond ● Excellent thermal shock performance ● For use in high voltage systems ● 17 | SSDI | | ||
70NS RECOVERY, AXIAL LEADED, HERMETIC HIGH VOLTAGE RECTIFIERS 70ns Recovery • Axial Leaded • Hermetic | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
ULTRA FAST RECOVERY HIGH VOLTAGE RECTIFIER FEATURES: ● Fast recovery: 70 nsec maximum ● PIV to 10 KV ● Hermetically sealed axial package ● Void-free ceramic frit glass construction ● High temperature Category I eutectic metallurgical bond ● Excellent thermal shock performance ● For use in high voltage systems ● 175°C maximum operat | SSDI | | ||
ULTRA FAST RECOVERY HIGH VOLTAGE RECTIFIER FEATURES: ● Fast recovery: 70 nsec maximum ● PIV to 10 KV ● Hermetically sealed axial and surface mount package ● Void-free ceramic frit glass construction ● High temperature Category I eutectic metallurgical bond ● Excellent thermal shock performance ● For use in high voltage systems ● 17 | SSDI | | ||
SURFACE MOUNT RECTIFIERS 70NS RECOVERY, HERMETIC, JANTX, JANTXV 70ns Recovery Hermetic JANTX JANTXV | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
70NS RECOVERY, AXIAL LEADED, HERMETIC HIGH VOLTAGE RECTIFIERS 70ns Recovery • Axial Leaded • Hermetic | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
ULTRA FAST RECOVERY HIGH VOLTAGE RECTIFIER FEATURES: ● Fast recovery: 70 nsec maximum ● PIV to 10 KV ● Hermetically sealed axial package ● Void-free ceramic frit glass construction ● High temperature Category I eutectic metallurgical bond ● Excellent thermal shock performance ● For use in high voltage systems ● 175°C maximum operat | SSDI | | ||
0.5A-2.0A RECTIFIERS 2,000V - 10,000V working reverse voltage 70 ns Recovery Time Operating Temperature = -65 to +175°C Storage Temperature = -65 to +200°C | DIGITRON | | ||
ULTRA FAST RECOVERY HIGH VOLTAGE RECTIFIER FEATURES: ● Fast recovery: 70 nsec maximum ● PIV to 10 KV ● Hermetically sealed axial and surface mount package ● Void-free ceramic frit glass construction ● High temperature Category I eutectic metallurgical bond ● Excellent thermal shock performance ● For use in high voltage systems ● 17 | SSDI | | ||
Axial Leaded Rectifiers Axial Leaded Rectifiers | AMMSEMI | | ||
2,000 V - 10,000 V Rectifiers 0.5 A - 2.0 A Forward Current 70 ns Recovery Time [VOLTAGE MULTIPLIERS INC.] 2,000 V - 10,000 V Rectifiers 0.5 A - 2.0 A Forward Current 70 ns Recovery Time AXIAL LEADED HERMETICALLY SEALED MIL-PRF-19500/575 | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
Spice Model High Voltage Diodes - Axial Lead 0.5A - 2.0A • 70ns • Hermetic • JANTX • JANTXV | VMI | | ||
2,000 V - 5,000 V Rectifiers [VOLTAGE MULTIPLIERS INC.] 2,000 V - 5,000 V Rectifiers 2.0 A - 5.0 A Forward Current 70 ns Recovery Time SURFACE MOUNT HERMETICALLY SEALED | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
High Voltage Rectifiers - Formed Lead High Voltage Rectifiers - Formed Lead 0.8A - 3.5A • 30ns - 70ns • Hermetic | VMI | | ||
2,000 V - 5,000 V Rectifiers High Voltage Rectifiers - Formed Lead 0.8A - 3.5A• 30ns - 70ns • Hermetic | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
ULTRA FAST RECOVERY HIGH VOLTAGE RECTIFIER FEATURES: ● Fast recovery: 70 nsec maximum ● PIV to 10 KV ● Hermetically sealed axial and surface mount package ● Void-free ceramic frit glass construction ● High temperature Category I eutectic metallurgical bond ● Excellent thermal shock performance ● For use in high voltage systems ● 17 | SSDI | | ||
SURFACE MOUNT RECTIFIERS 70NS RECOVERY, HERMETIC, JANTX, JANTXV 70ns Recovery Hermetic JANTX JANTXV | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
2,000 V - 5,000 V Rectifiers 0.5 A - 1.5 A Forward Current 30 ns - 50 ns Recovery Time 2,000 V - 5,000 V Rectifiers 2.0 A - 5.0 A Forward Current 70 ns Recovery Time SURFACE MOUNT HERMETICALLY SEALED | VMI | | ||
2,000 V - 5,000 V Rectifiers [VOLTAGE MULTIPLIERS INC.] 2,000 V - 5,000 V Rectifiers 2.0 A - 5.0 A Forward Current 70 ns Recovery Time SURFACE MOUNT HERMETICALLY SEALED | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
HIGH VOLTAGE DIODES - SURFACE MOUNT HIGH VOLTAGE DIODES - SURFACE MOUNT | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
70NS RECOVERY, AXIAL LEADED, HERMETIC HIGH VOLTAGE RECTIFIERS 70ns Recovery • Axial Leaded • Hermetic | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
ULTRA FAST RECOVERY HIGH VOLTAGE RECTIFIER FEATURES: ● Fast recovery: 70 nsec maximum ● PIV to 10 KV ● Hermetically sealed axial package ● Void-free ceramic frit glass construction ● High temperature Category I eutectic metallurgical bond ● Excellent thermal shock performance ● For use in high voltage systems ● 175°C maximum operat | SSDI | | ||
ULTRA FAST RECOVERY HIGH VOLTAGE RECTIFIER FEATURES: ● Fast recovery: 70 nsec maximum ● PIV to 10 KV ● Hermetically sealed axial and surface mount package ● Void-free ceramic frit glass construction ● High temperature Category I eutectic metallurgical bond ● Excellent thermal shock performance ● For use in high voltage systems ● 17 | SSDI | | ||
ULTRA FAST RECOVERY HIGH VOLTAGE RECTIFIER FEATURES: ● Fast recovery: 70 nsec maximum ● PIV to 10 KV ● Hermetically sealed axial and surface mount package ● Void-free ceramic frit glass construction ● High temperature Category I eutectic metallurgical bond ● Excellent thermal shock performance ● For use in high voltage systems ● 17 | SSDI | | ||
SURFACE MOUNT RECTIFIERS 70NS RECOVERY, HERMETIC, JANTX, JANTXV 70ns Recovery Hermetic JANTX JANTXV | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
70NS RECOVERY, AXIAL LEADED, HERMETIC HIGH VOLTAGE RECTIFIERS 70ns Recovery • Axial Leaded • Hermetic | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Axial Leaded Rectifiers Axial Leaded Rectifiers | AMMSEMI | | ||
ULTRA FAST RECOVERY HIGH VOLTAGE RECTIFIER FEATURES: ● Fast recovery: 70 nsec maximum ● PIV to 10 KV ● Hermetically sealed axial and surface mount package ● Void-free ceramic frit glass construction ● High temperature Category I eutectic metallurgical bond ● Excellent thermal shock performance ● For use in high voltage systems ● 17 | SSDI | | ||
ULTRA FAST RECOVERY HIGH VOLTAGE RECTIFIER FEATURES: ● Fast recovery: 70 nsec maximum ● PIV to 10 KV ● Hermetically sealed axial package ● Void-free ceramic frit glass construction ● High temperature Category I eutectic metallurgical bond ● Excellent thermal shock performance ● For use in high voltage systems ● 175°C maximum operat | SSDI | | ||
0.5A-2.0A RECTIFIERS 2,000V - 10,000V working reverse voltage 70 ns Recovery Time Operating Temperature = -65 to +175°C Storage Temperature = -65 to +200°C | DIGITRON | | ||
Spice Model High Voltage Diodes - Axial Lead 0.5A - 2.0A • 70ns • Hermetic • JANTX • JANTXV | VMI | | ||
2,000 V - 10,000 V Rectifiers 0.5 A - 2.0 A Forward Current 70 ns Recovery Time [VOLTAGE MULTIPLIERS INC.] 2,000 V - 10,000 V Rectifiers 0.5 A - 2.0 A Forward Current 70 ns Recovery Time AXIAL LEADED HERMETICALLY SEALED MIL-PRF-19500/575 | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
High Voltage Rectifiers - Formed Lead High Voltage Rectifiers - Formed Lead 0.8A - 3.5A • 30ns - 70ns • Hermetic | VMI | | ||
2,000 V - 5,000 V Rectifiers High Voltage Rectifiers - Formed Lead 0.8A - 3.5A• 30ns - 70ns • Hermetic | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
ULTRA FAST RECOVERY HIGH VOLTAGE RECTIFIER FEATURES: ● Fast recovery: 70 nsec maximum ● PIV to 10 KV ● Hermetically sealed axial and surface mount package ● Void-free ceramic frit glass construction ● High temperature Category I eutectic metallurgical bond ● Excellent thermal shock performance ● For use in high voltage systems ● 17 | SSDI | | ||
2,000 V - 5,000 V Rectifiers [VOLTAGE MULTIPLIERS INC.] 2,000 V - 5,000 V Rectifiers 2.0 A - 5.0 A Forward Current 70 ns Recovery Time SURFACE MOUNT HERMETICALLY SEALED | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
SURFACE MOUNT RECTIFIERS 70NS RECOVERY, HERMETIC, JANTX, JANTXV 70ns Recovery Hermetic JANTX JANTXV | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
HIGH VOLTAGE DIODES - SURFACE MOUNT HIGH VOLTAGE DIODES - SURFACE MOUNT | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
70NS RECOVERY, AXIAL LEADED, HERMETIC HIGH VOLTAGE RECTIFIERS 70ns Recovery • Axial Leaded • Hermetic | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
ULTRA FAST RECOVERY HIGH VOLTAGE RECTIFIER FEATURES: ● Fast recovery: 70 nsec maximum ● PIV to 10 KV ● Hermetically sealed axial and surface mount package ● Void-free ceramic frit glass construction ● High temperature Category I eutectic metallurgical bond ● Excellent thermal shock performance ● For use in high voltage systems ● 17 | SSDI | | ||
ULTRA FAST RECOVERY HIGH VOLTAGE RECTIFIER FEATURES: ● Fast recovery: 70 nsec maximum ● PIV to 10 KV ● Hermetically sealed axial package ● Void-free ceramic frit glass construction ● High temperature Category I eutectic metallurgical bond ● Excellent thermal shock performance ● For use in high voltage systems ● 175°C maximum operat | SSDI | |
1N65产品属性
- 类型
描述
- 型号
1N65
- 制造商
UTC-IC
- 制造商全称
UTC-IC
- 功能描述
1.2A, 650V N-CHANNEL POWER MOSFET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VMI |
24+ |
NA/ |
6206 |
原装现货,当天可交货,原型号开票 |
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VBsemi |
21+ |
TO220 |
10065 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
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UMW/广东友台半导体 |
25+ |
SOT-223-4 |
32360 |
UMW/广东友台半导体全新特价1N65G即刻询购立享优惠#长期有货 |
|||
UMW(广东友台半导体) |
24+ |
TO-252 |
5000 |
诚信服务,绝对原装原盘。 |
|||
UTC |
2450+ |
SOT-223 |
18500 |
只做原厂原装正品终端客户免费申请样品 |
|||
UTC(友顺) |
24+/25+ |
SOT-223-3 |
2500 |
UTC原厂一级代理商,价格优势! |
|||
VOLTAGE MULTIPLIERS |
23+ |
SMD |
880000 |
明嘉莱只做原装正品现货 |
|||
长电 |
25+23+ |
TO-252 |
23828 |
绝对原装正品全新进口深圳现货 |
|||
SMD |
24+ |
2 |
19000 |
只做原厂渠道 可追溯货源 |
|||
VOLTAGEMULTIPLIER |
24+ |
281 |
1N65规格书下载地址
1N65参数引脚图相关
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- 1N6514
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- 1N6513
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- 1N6512
- 1N6511
- 1N6510
- 1N6509
- 1N6508
- 1N6507
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- 1N6505
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- 1N6492
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- 1N6490
- 1N649
- 1N6489
- 1N6488
- 1N6487
- 1N6486
- 1N6485US
- 1N6485
- 1N6484HE3/96
- 1N6484-E3/97
- 1N6484-E3/96
- 1N6484
- 1N6483-E3/96
- 1N6483
- 1N6482-E3/96
- 1N6482
- 1N6481-E3/96
- 1N648-1
- 1N6481
- 1N6480-E3/96
- 1N6480
- 1N648
- 1N647UR-1
- 1N6479HE3/96
- 1N6479-E3/96
- 1N6479
- 1N6478-E3/96
- 1N6478-E3/76
- 1N6478
- 1N6476
- 1N647-1
1N65数据表相关新闻
1N60G-SOT223R-B-TG_UTC代理商
1N60G-SOT223R-B-TG_UTC代理商
2023-3-71N6525 全套的高压二极管
全新原装进口，质量保证，宇集芯一对一服务您放心的品质，急速发货，VMI提供世界上最全套的高压二极管。轴向引线和SMD二极管的范围从2kV到20kV。所有的晶圆都是在我们的设备中掺杂、扩散和金属化的。我们提供广泛的测试，以确保我们的客户收到最/高质量的二极管。
2021-5-181N6513 全套表面贴装二极管
全新原装进口，质量保证，宇集芯您放心的品质，VMI提供世界上最全套的高压二极管。轴向引线和SMD二极管的范围从2kV到20kV。所有的晶圆都是在我们的设备中掺杂、扩散和金属化的。我们提供广泛的测试，以确保我们的客户收到最/高质量的二极管。
2021-5-141N6529 全套中高压二极管
全新原装进口，质量保证，宇集芯您放心的品质，VMI提供世界上最全套的高压二极管。轴向引线和SMD二极管的范围从2kV到20kV。所有的晶圆都是在我们的设备中掺杂、扩散和金属化的。我们提供广泛的测试，以确保我们的客户收到最/高质量的二极管。
2021-5-131N6117代理渠道 ，进口原装
1N6117 代理渠道 ，进口原装
2020-10-191N5924BRLG，1N5927BG，1N6295AG，1N6296A，1N6297A，1N6298ARL4
1N5924BRLG，1N5927BG，1N6295AG，1N6296A，1N6297A，1N6298ARL4
2020-3-10
DdatasheetPDF页码索引
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