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位置：首页 > IC中文资料 > ME230

ME230价格

参考价格：￥0.3250

型号：ME2301A-G 品牌：\u677e\u6728 备注：这里有ME230多少钱，2026年最近7天走势，今日出价，今日竞价，ME230批发/采购报价，ME230行情走势销售排行榜，ME230报价。
型号 功能描述 生产厂家 企业 LOGO 操作
ME230

Preset counters mechanic

文件：330.45 Kbytes Page：2 Pages

IVO

堡盟电子

ME2301

P-Channel 20-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch • PA Switch • DC/DC Converters

VBSEMI

微碧半导体

ME2301A

P-Channel 20-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch • PA Switch • DC/DC Converters

VBSEMI

微碧半导体

ME2301B

P-Channel 20-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch • PA Switch • DC/DC Converters

VBSEMI

微碧半导体

ME2301D

P-Channel 20-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch • PA Switch • DC/DC Converters

VBSEMI

微碧半导体

ME2301T1

P-Channel 20-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch • PA Switch • DC/DC Converters

VBSEMI

微碧半导体

ME2303

P-Channel 30 V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 Rg Tested APPLICATIONS • For Mobile Computing - Load Switch - Notebook Adaptor Switch - DC/DC Converter

VBSEMI

微碧半导体

ME2305

P-Channel 20-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch • PA Switch • DC/DC Converters

VBSEMI

微碧半导体

ME2305A

P-Channel 20-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch • PA Switch • DC/DC Converters

VBSEMI

微碧半导体

ME2306

N-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converter

VBSEMI

微碧半导体

ME2306D

N-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converter

VBSEMI

微碧半导体

ME2307

P-Channel 30 V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 Rg Tested APPLICATIONS • For Mobile Computing - Load Switch - Notebook Adaptor Switch - DC/DC Converter

VBSEMI

微碧半导体

ME2307S

P-Channel 30 V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 Rg Tested APPLICATIONS • For Mobile Computing - Load Switch - Notebook Adaptor Switch - DC/DC Converter

VBSEMI

微碧半导体

ME2308

N-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converter

VBSEMI

微碧半导体

ME2308D

N-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converter

VBSEMI

微碧半导体

ME2309

P-Channel 60-V (D-S) MOSFET

FEATURES • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • P-Channel • 175 °C Operating Temperature • Dynamic dV/dt Rating • Low Thermal Resistance • Lead (Pb)-free Available

VBSEMI

微碧半导体

ME2301A

MOSFET

FORCEMOS

力士科技

ME2301DC

MOSFET

FORCEMOS

力士科技

ME2301DN-G

MOSFET

FORCEMOS

力士科技

ME2302A29T

High-density cell design for ultra low on-resistance

文件：472.13 Kbytes Page：4 Pages

SUNMATE

森美特

ME2303

Super high density cell design for extremely low RDS(ON)

文件：1.18263 Mbytes Page：5 Pages

SUNMATE

森美特

ME2304

N-Channel 30-V (D-S) MOSFET

文件：1.86741 Mbytes Page：9 Pages

VBSEMI

微碧半导体

ME2306A

N-Channel 30-V (D-S) MOSFET

文件：1.02606 Mbytes Page：9 Pages

VBSEMI

微碧半导体

ME2308S

N-Channel 30-V (D-S) MOSFET

文件：1.02592 Mbytes Page：9 Pages

VBSEMI

微碧半导体

BSP230

P-channel enhancement mode vertical D-MOS transistor

DESCRIPTION P-channel enhancement mode vertical D-MOS transistor in a SOT223 plastic SMD package. FEATURES • Direct interface to C-MOS, TTL, etc. • High-speed switching • No secondary breakdown. APPLICATIONS • Line current interruptor in telephone sets • Relay, high speed and line transfor

PHILIPS

飞利浦

NTE230

Silicon Controlled Rectifier (SCR) TV Deflection Circuit

Features: • CTV 110° – CRT Horizontal Deflection • Tracer Switch

NTE

SB230

2 AMPERE SCHOTTKY BARRIER RECTIFIERS(VOLTAGE - 20 to 100 Volts CURRENT - 2.0 Amperes)

VOLTAGE 20 to 100 Volts CURRENT 2.0 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound. • Exceeds environmental standards of MIL-S-19500/228 • For use in low voltage,high frequency inverters

PANJIT

強茂

SMTPB230

TRISILTM

DESCRIPTION The SMTPBxx series has been designedto protect telecommunication equipment against lightning and transient induced by AC power lines. FEATURES BIDIRECTIONAL CROWBAR PROTECTION. BREAKDOWNVOLTAGE RANGE: From 62 V To 270 V. HOLDING CURRENT: IH= 150 mA min REPETITIVE PE

STMICROELECTRONICS

意法半导体

UN230

Transistor array to drive the small motor

■ Features ● Small and lightweight ● Low power consumption ● Low-voltage drive ● With 4 elements incorporated ■ Applications ● For motor drives ● Small motor drive circuits in general

PANASONIC

松下

ME230产品属性

  • 类型

    描述

  • Type：

    P

  • Schottky：

    No

  • ESD(KV)：

    N

  • Appication：

    load switch

  • VDS(V)：

    -20.0

  • Vgs(V)：

    8

  • Ids(A)：

    -2.0

  • Pd(W)：

    1.0

  • Vgs(th)max(V)：

    -1.0

  • Qg(nC)(4.5V)：

    5.0

  • Qgs(nC)：

    1.0

  • Qgd(nC)：

    1.0

  • Ciss(pF)：

    510.0

  • Crss(pF)：

    17.0

ME230供应商更多...

更新时间：2026-5-15 12:20:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市凌旭科技有限公司
ME2301
ME
2016+
SOT-23
3000
只做原装,假一罚十,公司可开17%增值税发票!
询价
深圳市润联芯城科技有限公司
ME2300
松木
23+
SOT-23
50000
原装正品 支持实单
询价
中天科工半导体（深圳）有限公司
ME2308S
MATSUKI
25+
SOT-23
37029
MATSUKI全新特价ME2308S即刻询购立享优惠#长期有货
询价
深圳市安富世纪电子有限公司
ME2301
Matsuki松木
23+
SOT-23
50000
全新原装正品现货,支持订货
询价
深圳市恒创达实业有限公司
ME2301
松木
17+
SOT-23
6200
100%原装正品现货
询价
深圳市宇创芯科技有限公司
ME2300
松木
24+
SOT-23
9600
原装现货,优势供应,支持实单!
询价
深圳市坤融电子科技有限公司
ME2309-G
FORCEMOS/力士
2025+
SOT-23
5000
原装进口价格优 请找坤融电子!
询价
深圳市拓亿芯电子有限公司
ME2301
松木
25+
SOT-23
15000
全新原装现货,价格优势
询价
贸泽芯城（深圳）电子科技有限公司
ME2300
松木
23+
SOT-23
13000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
深圳市百诺芯科技有限公司
ME2301
MATSUKIELEC日本松木电机
23+
SOT-23
24190
原装正品代理渠道价格优势
询价

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