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型号 功能描述 生产厂家 企业 LOGO 操作
ME2304

N-Channel 30-V (D-S) MOSFET

文件:1.86741 Mbytes Page:9 Pages

VBSEMI

微碧半导体

ME2304

MOSFET

FORCEMOS

力士科技

Silicon NPN Transistor High Current, High Speed Switch (Compl to NTE2314)

Description: The NTE2304 is a silicon NPN transistor in a TO3P type package. Typical applications include relay drivers, high–speed inverters, converters, and other general high–current switching applications. Features: • Low Collector–Emitter Saturation Voltage • Wide ASO and Resist

NTE

GENERAL PURPOSE LOW-NOISE AMPLIFIER

Product Description The RF2304 is a low-noise small-signal amplifier. The device is manufactured on a low-cost Gallium Arsenide MESFET process, and has been designed for use as a gain block in high-end communication systems operating from less than 300MHz to above 2.5GHz. With +6dBm output power,

RFMD

威讯联合

N-channel enhancement mode field-effect transistor

Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology Product availability: SI2304DS in SOT23. Features ■ TrenchMOS™ technology ■ Very fast switching ■ Subminiature surface mount package. Applications ■ Battery management

PHILIPS

飞利浦

DC- 20 GHz SP4T PIN Switch

Description The TriQuint TGS2304-SCC is a GaAs monolithic PIN-diode single-pole, four-throw switch, in chip form, that operates from DC to 20 GHz. Each arm consists of one series and two shunt PIN diodes. At a bias current of 10 mA per RF output arm, typical midband insertion loss is 0.6 dB; midb

TRIQUINT

DC- 20 GHz SP4T PIN Switch

Description The TriQuint TGS2304-SCC is a GaAs monolithic PIN-diode single-pole, four-throw switch, in chip form, that operates from DC to 20 GHz. Each arm consists of one series and two shunt PIN diodes. At a bias current of 10 mA per RF output arm, typical midband insertion loss is 0.6 dB; midb

TRIQUINT

ME2304产品属性

  • 类型

    描述

  • Type:

    N

  • Schottky:

    No

  • ESD(KV):

    N

  • Appication:

    load switch

  • VDS(V):

    30.0

  • Vgs(V):

    20

  • Ids(A):

    2.0

  • Pd(W):

    1.0

  • Vgs(th)max(V):

    3.0

  • Qg(nC)(4.5V):

    2.0

  • Qgs(nC):

    0.0

  • Qgd(nC):

    1.0

  • Ciss(pF):

    225.0

  • Crss(pF):

    28.0

更新时间:2026-5-16 22:58:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
松木
2016+
SOT-23
3500
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松木
24+
115046
Bychip/百域芯
21+
SOT-23
30000
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SOT-23
23+
NA
15659
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MATSUKI
2023+
STO-23
2683
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VBSEMI
24+
SOT23
48240
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Matsuki
24+
STO-23
5000
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MATSUKI
23+
SOT-23
24190
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松木
26+
TSSOP48
86720
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MQTSUKI松木
新年份
SOT-23
21000
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