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ME-1007

连接线缆

• 防护等级:\n• 工作温度:\n;

AKUSENSE

PHASE CONTROL THYRISTOR

PHASE CONTROL THYRISTOR Repetitive voltage up to 2400 V Mean on-state current 1270 A Surge current 19 kA

POSEICO

Photo Interrupter

Photo Interrupter For contactless SW, object detection Overview CNA1007H is a transmissive photosensor in which a high efficiency GaAs infrared light emitting diode is used as the light emitting element, and a high sensitivity phototransistor is used as the light detecting element. The two elem

PANASONIC

松下

uP Compatible, Double-Buffered D to A Converters

文件:369.16 Kbytes Page:22 Pages

NSC

国半

uP Compatible, Double-Buffered D to A Converters

文件:369.16 Kbytes Page:22 Pages

NSC

国半

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

文件:38.41 Kbytes Page:2 Pages

POLYFET

ME-1007产品属性

  • 类型

    描述

  • 插入力:

    18N以下

  • 拔出力(罩盖保持力):

    25N

  • 罩盖材质:

    PVC

  • 接触点:

    磷青铜

ME-1007数据表相关新闻