N-Channel MOSFET 500V, 9.0 A, 0.85(ohm)

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 9A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.85Ω(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 9A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.85Ω(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

N-Channel MOSFET 500V, 9.0 A, 0.85(ohm)

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500V N-Ch MOSFET

N-Channel MOSFET 500V, 9.0 A, 0.85(ohm)

文件：1.15572 Mbytes Page：8 Pages

N-Channel MOSFET 500V, 8.0 A, 0.97ohm

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500V N-Ch MOSFET

500V N-Ch MOSFET

N-Channel MOSFET 500V, 9.0 A, 0.85(ohm)

文件：776.44 Kbytes Page：6 Pages

500V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and with

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9A 500V N-channel enhanced field effect transistor

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