9A, 500V N-CHANNEL  POWER MOSFET

The UTC 9N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers planar stripe and DMOS technology. This technology allows a minimum on-state resistance, superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode. • RDS(ON)=0.85Ω @ VGS=10V \n• Improved dv/dt Capability \n• 100% Avalanche Tested;

9A, 500V N-CHANNEL POWER MOSFET

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Fast Switching Speed

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N-Channel 650V (D-S) Power MOSFET

文件：1.10594 Mbytes Page：10 Pages

丝印代码：9N50BF；9A 500V N-channel enhanced field effect transistor

文件：765.68 Kbytes Page：5 Pages

丝印代码：9N50BF；9A 500V N-channel enhanced field effect transistor

文件：765.68 Kbytes Page：5 Pages

500V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and with

9A, 500V N-CHANNEL POWER MOSFET

The UTC 9N50K-MT is an N-channel mode power MOSFETusing UTC’s advanced technology to provide customers planarstripe and DMOS technology. This technology allows a minimumon-state resistance, superior switching performance. It also canwithstand high energy pulse in the avalanche and commutationmode.Th • RDS(ON) < 0.85Ω @ VGS = 10V\n• High Switching Speed\n• Improved dv/dt Capability\n• 100% Avalanche Tested;

9A 500V N-channel enhanced field effect transistor

文件：765.68 Kbytes Page：5 Pages

500V N-Channel MOSFET

文件：802.04 Kbytes Page：9 Pages

9A, 500V N-CHANNEL POWER MOSFET

文件：180.33 Kbytes Page：6 Pages

N-CHANNEL POWER MOSFET

文件：206.17 Kbytes Page：7 Pages

N-CHANNEL POWER MOSFET

文件：206.17 Kbytes Page：7 Pages

N-CHANNEL POWER MOSFET

文件：206.17 Kbytes Page：7 Pages

N-CHANNEL POWER MOSFET

文件：206.17 Kbytes Page：7 Pages

N-CHANNEL POWER MOSFET

文件：206.17 Kbytes Page：7 Pages

N-CHANNEL POWER MOSFET

文件：206.17 Kbytes Page：7 Pages

N-CHANNEL POWER MOSFET

文件：206.17 Kbytes Page：7 Pages

N-CHANNEL POWER MOSFET

文件：206.17 Kbytes Page：7 Pages

N-CHANNEL POWER MOSFET

文件：206.17 Kbytes Page：7 Pages

9A, 500V N-CHANNEL POWER MOSFET

文件：180.33 Kbytes Page：6 Pages

500V N-Channel MOSFET

Features • 9.0A, 500V, RDS(on) = 0.73Ω @VGS = 10 V • Low gate charge ( typical 28 nC) • Low Crss ( typical 20 pF) • Fast switching • 100 avalanche tested • Improved dv/dt capability

500V N-Channel MOSFET

500V N-Channel MOSFET

500V N-Channel MOSFET

Features • 7.2A,500V, RDS(on) = 0.73Ω @VGS = 10 V • Low gate charge ( typical 28 nC) • Low Crss ( typical 20 pF) • Fast switching • 100 avalanche tested • Improved dv/dt capability

500V N-Channel MOSFET

Features • 9.0A, 500V, RDS(on) = 0.73Ω @VGS = 10 V • Low gate charge ( typical 28 nC) • Low Crss ( typical 20 pF) • Fast switching • 100 avalanche tested • Improved dv/dt capability

500V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withst

Expandable Dual 2-Wide 2-Input AND-OR-INVERT Gate

TTL HD74/HD74S Series

DUAL 2-WIDE 2-INPUT AND-OR-INVERT GATES ONE GATE EXPANDABLE

DUAL 2-WIDE 2-INPUT AND-OR-INVERT GATES ONE GATE EXPANDABLE