N-Channel MOSFET 600V, 8A, 1.0(ohm)

文件：997.99 Kbytes Page：6 Pages

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 8A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.0Ω(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

600V N-Ch MOSFET

N-Channel MOSFET 600V, 8A, 1.0(ohm)

文件：997.99 Kbytes Page：6 Pages

7.5 Amps, 600/650 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 8N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching ap

isc N-Channel Mosfet Transistor

·FEA TURES ·Drain Current –ID= 7.5A@TC=25℃ ·Drain Source Voltage-: VDSS= 600V(Min) ·Static Drain-SourceOn-Resistance : RDS(on) = 1.2Ω(Max) ·Avalanche Energy Specified ·Fast Switching ·Simple Drive Requirements ·DESCRITION ·Designed for high effi

7.5 Amps, 600/650 Volts N-CHANNEL POWER MOSFET

文件：217.21 Kbytes Page：8 Pages

N-CHANNEL POWER MOSFET

文件：473.72 Kbytes Page：7 Pages

8A 600V N-channel Enhancement Mode Power MOSFET

文件：879.04 Kbytes Page：12 Pages