N-Channel MOSFET 500V, 7.0 A, 0.9(ohm)

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 5A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.4Ω(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 7A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.9Ω(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

N-Channel MOSFET 500V, 7.0 A, 0.9(ohm)

文件：1.18111 Mbytes Page：8 Pages

N-Channel MOSFET 500V, 7.0 A, 0.9(ohm)

文件：1.18111 Mbytes Page：8 Pages

500V N-Ch MOSFET

500V N-Ch MOSFET

7 Amps, 500 Volts N-CHANNEL POWER MOSFET

■ DESCRIPTION The UTC 7N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanc

7A, 500V N-CHANNEL POWER MOSFET

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Fast Switching Speed

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500V N-Channel MOSFET

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500V N-Channel MOSFET

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