Single N-channel Trench MOSFET 80V, 105A, 7.0m(ohm)

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 105A@ TC=25℃ ·Drain Source Voltage : VDSS= 80V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 7mΩ(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

Single N-channel Trench MOSFET 80V, 105A, 7.0m(ohm)

文件：987.92 Kbytes Page：6 Pages

80V N-Ch MOSFET

Customer Specification

Construction Diameters (In) 1) Component 1 2 X 1 COND a) Conductor 16 (26/30) AWG BC 0.060 b) Insulation 0.032 Wall, Nom. EPDM Rubber 0.127 (1) Separator Paper Tape, 10 Overlap, Min. (2) Color(s) Cond Color Cond Color Cond Color 1 BLACK 2 WHITE 2) Cable Assembly 2 Components Cabled a) Tw

High-Current Switching Applications

High-Current Switching Applications • Low collector saturation voltage: VCE (sat) = −0.4 V (max) (IC = −2 A) • High-speed switching time: tstg = 1.0 μs (typ.) • Complementary to 2SC5175

8-Channel DAC with PLL and Differential Outputs, 192 kHz, 24 Bits

FEATURES PLL generated or direct master clock Low EMI design DAC with 110 dB dynamic range and SNR −96 dB THD + N 3.3 V single supply Tolerance for 5 V logic inputs Supports 24 bits and 8 kHz to 192 kHz sample rates Differential DAC output Log volume control with autoramp function SPI® c

1933 F/R/W Coaxial DFB Laser Diode

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N-Channel MOSFET

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