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MDD312价格
参考价格：￥736.8912
型号：MDD312-12N1 品牌：Ixys 备注：这里有MDD312多少钱，2026年最近7天走势，今日出价，今日竞价，MDD312批发/采购报价，MDD312行情走势销售排行榜，MDD312报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MDD312 | High Power Diode Modules Features • International standard package • Direct Copper Bonded Al2O3 ceramic with copper base plate • Planar passivated chips • Isolation voltage 3600 V~ • UL registered Applications • Supplies for DC power equipment • DC supply for PWM inverter • Field supply for DC motors • Battery D | IXYS 艾赛斯 |   | |
MDD312 | High Power Diode Modules | LITTELFUSE 力特 | | |
Standard Rectifier Module Phase leg Features • International standard package • Direct Copper Bonded Al2O3 ceramic with copper base plate • Planar passivated chips • Isolation voltage 3600 V~ • UL registered Applications • Supplies for DC power equipment • DC supply for PWM inverter • Field supply for DC motors • Battery D | IXYS 艾赛斯 | | ||
Standard Rectifier Module Phase leg Features • International standard package • Direct Copper Bonded Al2O3 ceramic with copper base plate • Planar passivated chips • Isolation voltage 3600 V~ • UL registered Applications • Supplies for DC power equipment • DC supply for PWM inverter • Field supply for DC motors • Battery D | IXYS 艾赛斯 | | ||
Standard Rectifier Module Phase leg Features • International standard package • Direct Copper Bonded Al2O3 ceramic with copper base plate • Planar passivated chips • Isolation voltage 3600 V~ • UL registered Applications • Supplies for DC power equipment • DC supply for PWM inverter • Field supply for DC motors • Battery D | IXYS 艾赛斯 | | ||
Standard Rectifier Module Features • International standard package • Direct Copper Bonded Al2O3 ceramic with copper base plate • Planar passivated chips • Isolation voltage 3600 V~ • UL registered Applications • Supplies for DC power equipment • DC supply for PWM inverter • Field supply for DC motors • Battery D | IXYS 艾赛斯 | | ||
High Voltage Standard Rectifier Module Features • International standard package • Direct Copper Bonded Al2O3 ceramic with copper base plate • Planar passivated chips • Isolation voltage 3600 V~ • UL registered Applications • Supplies for DC power equipment • DC supply for PWM inverter • Field supply for DC motors • Battery D | IXYS 艾赛斯 | | ||
High Voltage Standard Rectifier Module Features • International standard package • Direct Copper Bonded Al2O3 ceramic with copper base plate • Planar passivated chips • Isolation voltage 3600 V~ • UL registered Applications • Supplies for DC power equipment • DC supply for PWM inverter • Field supply for DC motors • Battery D | IXYS 艾赛斯 | | ||
双二极管模块 | LITTELFUSE 力特 | | ||
双二极管模块 | LITTELFUSE 力特 | | ||
封装/外壳：Y1-CU 包装：散装 描述：DIODE MODULE 1.4KV 310A Y1-CU 分立半导体产品 二极管 - 整流器 - 阵列 | IXYS 艾赛斯 | | ||
封装/外壳：Y1-CU 包装：管件 描述：DIODE MODULE 1.6KV 310A Y1-CU 分立半导体产品 二极管 - 整流器 - 阵列 | IXYS 艾赛斯 | | ||
Sequencing Hotswap Controllers General Description The HV302 and HV312 Hotswap Controllers perform current limiting, circuit breaker protection, over and under voltage detection power management functions during insertion of cards or modules into live backplanes and connectors. Theymaybe used in systems where active contro | SUTEX | | ||
N-Channel Silicon Junction Field Effect Transistor Description: The NTE312 is a field effect transistor designed for VHF amplifier and mixer applications. The NTE312 comes in a TO–92 package. Features: • High Power Gain: 10dB Min at 400MHz • High Transconductance: 4000 µmho Min at 400MHz • Low Crss: 1pF Max • High (Yfs) / Ciss | NTE | | ||
TURBOSWITCHTM ULTRA-FAST HIGH VOLTAGE DIODE DESCRIPTION TURBOSWITCH 1200V drastically cuts losses in all high voltage operationswhich require extremely fast, soft and noise-free power diodes. Due to their optimized switching performances they also highly decrease power losses in any associated switching IGBT or MOSFET in all ”freewheel mo | STMICROELECTRONICS 意法半导体 | | ||
TURBOSWITCHTM ULTRA-FAST HIGH VOLTAGE DIODE DESCRIPTION TURBOSWITCH 1200V drastically cuts losses in all high voltage operationswhich require extremely fast, soft and noise-free power diodes. Due to their optimized switching performances they also highly decrease power losses in any associated switching IGBT or MOSFET in all ”freewheel mo | STMICROELECTRONICS 意法半导体 | | ||
Operational Amplifiers 文件：200.55 Kbytes Page：6 Pages | NSC 国半 | |
MDD312产品属性
- 类型
描述
- 型号
MDD312
- 制造商
IXYS
- 制造商全称
IXYS Corporation
- 功能描述
High Power Diode Modules
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IXYS |
20+ |
原装模块 |
368 |
样品可出,原装现货 |
|||
IXYS/艾赛斯 |
2026+ |
原厂原封可拆样 |
54285 |
百分百原装现货 实单必成 欢迎询价 |
|||
MAGNACHIP/美格纳 |
2402+ |
12+ |
8324 |
原装正品!实单价优! |
|||
IXYS |
18+ |
MODULE |
85600 |
保证进口原装可开17%增值税发票 |
|||
IXYS |
1708+ |
MODULE |
5600 |
只做原装进口,假一罚十 |
|||
IXYS(艾赛斯) |
25+ |
封装 |
500000 |
源自原厂成本,高价回收工厂呆滞 |
|||
IXYS |
24+ |
NA |
3000 |
进口原装正品优势供应 |
|||
IXYS |
专业模块 |
MODULE |
8513 |
模块原装主营-可开原型号增税票 |
|||
IXYS |
19+/20+ |
Y1-CU |
1000 |
主打产品价格优惠.全新原装正品 |
|||
IXYS/Littelfuse |
24+ |
Y1-CU |
15800 |
全新原装正品现货直销 |
MDD312规格书下载地址
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DdatasheetPDF页码索引
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