Termination Insensitive Mixer

Description The unique design of the termination insensitive mixer (TIM) enables it to apply high reverse voltage to diodes during their “off” phase, in the LO cycle. This allows for higher power level performance with minimum distortion. In addition the TIM has internal loads that provide a good

Termination Insensitive Mixer, 1 - 4000 MHz

Description The unique design of the termination insensitive mixer (TIM) enables it to apply high reverse voltage to diodes during their “off” phase, in the LO cycle. This allows for higher power level performance with minimum distortion. In addition the TIM has internal loads that provide a good

Termination Insensitive Mixer

Termination Insensitive Mixer, 1 - 4000 MHz

Description The unique design of the termination insensitive mixer (TIM) enables it to apply high reverse voltage to diodes during their “off” phase, in the LO cycle. This allows for higher power level performance with minimum distortion. In addition the TIM has internal loads that provide a good

Termination Insensitive Mixer, 1 - 4000 MHz

Description The unique design of the termination insensitive mixer (TIM) enables it to apply high reverse voltage to diodes during their “off” phase, in the LO cycle. This allows for higher power level performance with minimum distortion. In addition the TIM has internal loads that provide a good

(non-RoHS) Termination Insensitive

The unique design of the termination insensitive mixer (TIM) enables it to apply high reverse voltage to diodes during their “off” phase, in the LO cycle. This allows for higher power level performance with minimum distortion. In addition the TIM has internal loads that provide a good match and also ·Intermodulation Ratio is Insensitive to Port Mismatches\n·MIL-STD-883 Screening Available\n·Maximum Input Power: 350 mW Max @ 25°C, Derated to 85°C @ 3.2 mW/°C n LO Power: +24 dBm Max.\n·Impedance: 50 Ohms Nominal\n·Isolation: 35 dB Typical Midband\n·VSWR: <2.0:1 Typical Midband;

Termination Insensitive Mixer, 1 - 4000 MHz

封装/外壳：FP-2 包装：管件 描述：MIXER,TB,RF,TIM RF/IF，射频/中频和 RFID 射频混频器

UHF variable capacitance diode

DESCRIPTION The BB179 is a planar technology variable capacitance diode, in a SOD523 (SC-79) package. The excellent matching performance is achieved by gliding matching and a direct matching assembly procedure. FEATURES • Excellent linearity • Excellent matching to 2 DMA • Ultra small plastic

NPN SILICON TRANSISTOR

Description The device is manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. Features ■ NPN transistor Applications ■ General purpose switching

Silicon epitaxial planar type

Silicon epitaxial planar type For high-speed switching circuits ■ Features • Large repetitive peak forward current IFRM • Small terminal capacitance Ct

Germanium PNP Transistor Audio Power Amplifier, High Current Switch

Description: The NTE179 is a PNP type germainum transistor in a TO3 type case designed for high–current switching applications requiring low saturation voltages, fast switching times, and good safe operating conditions. Features: • Low Collector–Emitter Saturation Voltage: VCE(sat

TRISILTM

DESCRIPTION The SMTPBxx series has been designedto protect telecommunication equipment against lightning and transient induced by AC power lines. FEATURES BIDIRECTIONAL CROWBAR PROTECTION. BREAKDOWNVOLTAGE RANGE: From 62 V To 270 V. HOLDING CURRENT: IH= 150 mA min REPETITIVE PE