Medium Power Linear and Switching Applications

Medium Power Linear and SwitchingApplications • Complement to BD 176/178/180 respectively

Plastic Medium-Power NPN Silicon Transistor

Plastic Medium-Power NPN Silicon Transistor This device is designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits. Features • DC Current Gain - hFE = 40 (Min) @ IC = 0.15 Adc • BD179 is complementary with BD180 • P

EPITAXIAL SILICON POWER TRANSISTORS

BD175, 177, 179 NPN PLASTIC POWER TRANSISTORS BD176, 178, 180 PNP PLASTIC POWER TRANSISTORS Medium Power Liner and Switching Applications

Plastic Medium Power Silicon NPNP Transistor

Plastic Medium Power NPN Silicon Transistor . . . designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 (Min) @ IC = 0.15 Adc • BD179 is complementary with BD180

isc Silicon NPN Power Transistor

DESCRIPTION • With TO-126 package • Complement to type BD176/178 /180 APPLICATIONS • For medium power linear and switching applications

Silicon NPN Power Transistors

DESCRIPTION ·With TO-126 package ·Complement to type BD176/178/180 APPLICATIONS ·For medium power linear and switching applications

NPN SILICON TRANSISTOR

Description The device is manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. Features ■ NPN transistor Applications ■ General purpose switching

3.0 AMPERES POWER TRANSISTORS NPN SILICON 80 VOLTS 30 WATTS

Trans GP BJT NPN 80V 3A 3-Pin TO-225 Bulk

NPN SILICON TRANSISTOR

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NPN power transistor

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封装/外壳：TO-225AA，TO-126-3 包装：卷带（TR） 描述：TRANS NPN 80V 3A TO126 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

NPN SILICON TRANSISTOR

Silicon NPN Power Transistors

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封装/外壳：TO-225AA，TO-126-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 80V 3A SOT32 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Plastic Medium Power Silicon NPNP Transistor

Plastic Medium Power NPN Silicon Transistor . . . designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 (Min) @ IC = 0.15 Adc • BD179 is complementary with BD180

Plastic Medium-Power NPN Silicon Transistor

Plastic Medium-Power NPN Silicon Transistor This device is designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits. Features • DC Current Gain - hFE = 40 (Min) @ IC = 0.15 Adc • BD179 is complementary with BD180 • P

Plastic Medium-Power Silicon NPN Transistor

Plastic Medium-Power NPN Silicon Transistor This device is designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits. Features • DC Current Gain - hFE = 40 (Min) @ IC = 0.15 Adc • BD179 is complementary with BD180 • P

Plastic Medium-Power Silicon NPN Transistor

Plastic Medium-Power NPN Silicon Transistor This device is designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits. Features • DC Current Gain - hFE = 40 (Min) @ IC = 0.15 Adc • BD179 is complementary with BD180 • P

EPITAXIAL SILICON POWER TRANSISTORS

BD175, 177, 179 NPN PLASTIC POWER TRANSISTORS BD176, 178, 180 PNP PLASTIC POWER TRANSISTORS Medium Power Liner and Switching Applications

NPN SILICON TRANSISTOR

文件：225.45 Kbytes Page：5 Pages

NPN power transistor

文件：253.04 Kbytes Page：9 Pages

High Definition BNC Connectors

文件：57.12 Kbytes Page：2 Pages

Serial Digital BNC Connectors

文件：401.66 Kbytes Page：7 Pages

UHF variable capacitance diode

DESCRIPTION The BB179 is a planar technology variable capacitance diode, in a SOD523 (SC-79) package. The excellent matching performance is achieved by gliding matching and a direct matching assembly procedure. FEATURES • Excellent linearity • Excellent matching to 2 DMA • Ultra small plastic

Silicon epitaxial planar type

Silicon epitaxial planar type For high-speed switching circuits ■ Features • Large repetitive peak forward current IFRM • Small terminal capacitance Ct

Germanium PNP Transistor Audio Power Amplifier, High Current Switch

Description: The NTE179 is a PNP type germainum transistor in a TO3 type case designed for high–current switching applications requiring low saturation voltages, fast switching times, and good safe operating conditions. Features: • Low Collector–Emitter Saturation Voltage: VCE(sat

TRISILTM

DESCRIPTION The SMTPBxx series has been designedto protect telecommunication equipment against lightning and transient induced by AC power lines. FEATURES BIDIRECTIONAL CROWBAR PROTECTION. BREAKDOWNVOLTAGE RANGE: From 62 V To 270 V. HOLDING CURRENT: IH= 150 mA min REPETITIVE PE