MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode

MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode Features • Composite type with a P-Channel Sillicon MOSFET (MCH3339) and a Schottky Barrier Diode (SBS007M) contained in one package facilitating high-density mounting. [MOSFET] • Low ON-resistance. • Ultrahigh-speed switc

MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode

BiMOS II 32-BIT SERIAL-INPUT, LATCHED SOURCE DRIVERS FOR -40 C TO 85 C OPERATION

BiMOS II 32-BIT SERIAL-INPUT, LATCHED SOURCE DRIVERS FOR -40°C TO +85°C OPERATION Designed primarily for use with vacuum-fluorescent displays, the UCQ5818AF and UCQ5818EPF smart power BiMOS II drivers combine CMOS shift registers, data latches, and control circuitry, with bipolar highspeed sourci

BiMOS II 32-BIT SERIAL-INPUT, LATCHED SOURCE DRIVERS WITH ACTIVE-DMOS PULL-DOWNS

Designed primarily for use with vacuum-fluorescent displays, the UCN5818AF and UCN5818EPF smart power BiMOS II drivers combine CMOS shift registers, data latches, and control circuitry, with bipolar highspeed sourcing outputs and DMOS active pull-down circuitry. The highspeed shift register and da

1 Amp Schottky Rectifier

1 Amp Schottky Rectifier • Schottky Barrier Rectifier • Guard Ring Protection • Low Forward Voltage • High Reliability • High Current Capability

1 Amp Schottky Rectifier

1 Amp Schottky Rectifier • Schottky Barrier Rectifier • Guard Ring Protection • Low Forward Voltage • High Reliability • High Current Capability • Surface Mount Package

1 Amp Schottky Rectifier

1 Amp Schottky Rectifier • Underwriters Laboratory Flammability Class 94V-0 • Schottky Barrier Rectifier • Guard ring protection • Low forward voltage • Low thermal resistance rating