MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications

MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode Features • Composite type with a N-channel sillicon MOSFET (MCH3445) and a schottky barrier diode (SS10015M) contained in one package facilitating high-density mounting. • [MOSFET] • Low ON-resistance. • Ultrahigh-speed sw

MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications

BiMOS II 20-BIT SERIAL-INPUT, LATCHED SOURCE DRIVERS WITH ACTIVE-DMOS PULL-DOWNS

The UCN5812AF/EPF combine a 20-bit CMOS shift register, data latches, and control circuitry with high-voltage bipolar source drivers and active DMOS pull-downs for reduced supply current requirements. Although designed primarily for vacuum-fluorescent displays, the high-voltage, highcurrent output

BiMOS II 20-BIT SERIAL-INPUT, LATCHED SOURCE DRIVERS WITH ACTIVE-DMOS PULL-DOWNS

The UCN5812AF/EPF combine a 20-bit CMOS shift register, data latches, and control circuitry with high-voltage bipolar source drivers and active DMOS pull-downs for reduced supply current requirements. Although designed primarily for vacuum-fluorescent displays, the high-voltage, highcurrent output

BiMOS II 20-BIT SERIAL-INPUT, LATCHED SOURCE DRIVERS FOR -40 Degrees Celcious TO 85 Degrees Celcious OPERATION

The UCN5812AF/EPF combine a 20-bit CMOS shift register, data latches, and control circuitry with high-voltage bipolar source drivers and active DMOS pull-downs for reduced supply current requirements. Although designed primarily for vacuum-fluorescent displays, the high-voltage, highcurrent output

HIGH PERFORMANCE FLEXIBLE 1-1/4 VALVE

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General Purpose Oscilloscope Probes

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