位置：首页 > IC中文资料第245页 > MCH3427-TL-E
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
Dual P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -5.3A, RDS(ON) = 45mW @VGS = -10V. RDS(ON) = 80mW @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant. | CET-MOS 华瑞 |   | ||
Beaded Ties 文件：106.3 Kbytes Page：1 Pages | HEYCO | | ||
OR gate 文件：84.96 Kbytes Page：1 Pages | FESTOFesto Corporation. 费斯托费斯托（中国）有限公司 | | ||
Migrating a microcontroller application from STM32F1 to STM32F2 series 文件：381.9 Kbytes Page：52 Pages | STMICROELECTRONICS 意法半导体 | | ||
DUAL 1A, 1.5MHz SYNCHRONOUS STEP-DOWN DC-DC CONVERTER 文件：621.72 Kbytes Page：9 Pages | DIODES 美台半导体 | |
MCH3427-TL-E产品属性
- 类型
描述
- 型号
MCH3427-TL-E
- 功能描述
MOSFET N-CH 20V 4A MCPH3
- RoHS
是
- 类别
分离式半导体产品 >> FET - 单
- 系列
-
- 标准包装
1,000
- 系列
MESH OVERLAY™ FET
- 型
MOSFET N 通道，金属氧化物 FET
- 特点
逻辑电平门
- 漏极至源极电压(Vdss)
200V 电流 - 连续漏极(Id) @ 25°
- C
18A 开态Rds（最大）@ Id, Vgs @ 25°
- C
180 毫欧 @ 9A，10V Id 时的
- Vgs(th)（最大）
4V @ 250µA 闸电荷(Qg) @
- Vgs
72nC @ 10V 输入电容(Ciss) @
- Vds
1560pF @ 25V 功率 -
- 最大
40W
- 安装类型
通孔
- 封装/外壳
TO-220-3 整包
- 供应商设备封装
TO-220FP
- 包装
管件
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
CETSEMI |
SOP-8 |
35500 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
CET |
24+ |
SO-8 |
11000 |
原装正品 有挂有货 假一赔十 |
|||
VBSEMI |
20+ |
SOP8 |
10115 |
||||
CETSEMI |
20+ |
SOP-8 |
63258 |
原装优势主营型号-可开原型号增税票 |
|||
CET |
26+ |
TSSOP-14. |
86720 |
全新原装正品价格最实惠 承诺假一赔百 |
|||
TI |
24+ |
QFN |
18766 |
公司现货库存,支持实单 |
|||
CET-MOS |
10 |
||||||
CET-MOS |
24+ |
con |
10 |
现货常备产品原装可到京北通宇商城查价格 |
|||
CET(华瑞) |
2447 |
SOP-8 |
115000 |
2500个/圆盘一级代理专营品牌!原装正品,优势现货, |
|||
CET/華瑞 |
2023+ |
SO-8 |
2500 |
原厂全新正品旗舰店优势现货 |
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MCH3427-TL-E规格书下载地址
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DdatasheetPDF页码索引
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