High capacitance

文件：1.87243 Mbytes Page：5 Pages

High-Current Switching Applications

High-Current Switching Applications Features • Adoption of FBET, MBIT processes. • High current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. • Ultraminiature package facilitates miniaturization in end products (mounting height : 0.85mm). • High allowab

Bipolar Transistor (-)50V, (-)3A, Low VCE(sat), (PNP)NPN Single MCPH3

Features • Adoption of FBET, MBIT processes • Large current capacity • Low collector-to-emitter saturation voltage • High-speed switching • Ultrasmall package facilitates miniaturization in end products (mounting height : 0.85mm) • High allowable power dissipation Applicaitons • DC / DC co

Bipolar Transistor (-)50V, (-)3A, Low VCE(sat), (PNP)NPN Single MCPH3

Features • Adoption of FBET, MBIT processes • Large current capacity • Low collector-to-emitter saturation voltage • High-speed switching • Ultrasmall package facilitates miniaturization in end products (mounting height : 0.85mm) • High allowable power dissipation Applicaitons • DC / DC co

DC / DC Converter Applications

DC / DC Converter Applications Features • Adoption of MBIT processes. • High current capacitance. • Low collector-to-emitter saturation voltage. • High speed switching. • Ultrasmall package facilitates miniaturization in end products (0.85mm). • High allowable power dissipation. Applicatio

DC / DC Converter Applications

DC / DC Converter Applications Features • Adoption of MBIT processes. • High current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. • Ultrasmall package facilitates miniaturization in end products (mounting height : 0.85mm). • High allowable power dissip

Bipolar Transistor (-)30V, (-)3A, Low VCE(sat), (PNP)NPN Single MCPH3

Features • Adoption of MBIT processes • Large current capacity • Low collector-to-emitter saturation voltage • High-speed switching • Ultrasmall package facilitates miniaturization in end products (mounting height : 0.85mm) • High allowable power dissipation Applicaitons • Relay drivers, l

Bipolar Transistor (-)30V, (-)3A, Low VCE(sat), (PNP)NPN Single MCPH3

Features • Adoption of MBIT processes • Large current capacity • Low collector-to-emitter saturation voltage • High-speed switching • Ultrasmall package facilitates miniaturization in end products (mounting height : 0.85mm) • High allowable power dissipation Applicaitons • Relay drivers, l

NPN Epitaxial Planar Silicon Transistor DC / DC Converter Applications

DC / DC Converter Applications Features • Adoption of MBIT processes. • Large current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. • Narrow hFE range. • Ultrasmall package facilitates miniaturization in end products (mounting height : 0.85mm). • High

NPN Epitaxial Planar Silicon Transistor DC / DC Converter Applications

DC / DC Converter Applications Features • Adoption of MBIT processes. • Large current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. • Narrow hFE range. • Ultrasmall package facilitates miniaturization in end products (mounting height : 0.85mm). • High

NPN Epitaxial Planar Silicon Transistor DC / DC Converter Applications

DC / DC Converter Applications Features • Adoption of MBIT processes. • Large current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. • Narrow hFE range. • Ultrasmall package facilitates miniaturization in end products (mounting height : 0.85mm). • High

NPN Epitaxial Planar Silicon Transistor DC / DC Converter Applications

DC / DC Converter Applications Features • Adoption of MBIT processes. • Large current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. • Narrow hFE range. • Ultrasmall package facilitates miniaturization in end products (mounting height: 0.85mm). • High a

NPN Epitaxial Planar Silicon Transistor DC / DC Converter Applications

DC / DC Converter Applications Features • Adoption of MBIT processes. • Large current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. • Narrow hFE range. • Ultrasmall package facilitates miniaturization in end products (mounting height: 0.85mm). • High a

NPN Epitaxial Planar Silicon Transistor DC / DC Converter Applications

DC / DC Converter Applications Features • Adoption of FBET, MBIT processes. • Large current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. • Narrow hFE range. • Ultrasmall package facilitates miniaturization in end products (mounting height : 0.85mm). •

PNP / NPN Epitaxial Planar Silicon Transistors DC / DC Converter Applications

DC / DC Converter Applications Features • Adoption of MBIT processes. • High current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. • Ultrasmall package permitting applied sets to be small and slim (mounting height : 0.85mm). • High allowable power dis

PNP / NPN Epitaxial Planar Silicon Transistors DC / DC Converter Applications

DC / DC Converter Applications Applications • Relay drivers, lamp drivers, motor drivers, flash. Features • Adoption of MBIT processes. • High current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. • Ultrasmall package permitting applied sets to be smal

PNP / NPN Epitaxial Planar Silicon Transistors DC / DC Converter Applications

DC / DC Converter Applications Features • Adoption of MBIT processes. • High current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. • Ultrasmall package permitting applied sets to be small and slim (mounting height : 0.85mm). • High allowable power dissi

Bipolar Transistor (-)50V, (-)2A, Low VCE(sat), (PNP)NPN Single MCPH3

Features • Adoption of MBIT processes • Large current capacity • Low collector-to-emitter saturation voltage • High-speed switching • Ultrasmall package permitting applied sets to be small and slim (mounting height : 0.85mm) • High allowable power dissipation Applicaitons • Relay drivers

Bipolar Transistor (-)50V, (-)2A, Low VCE(sat), (PNP)NPN Single MCPH3

Features • Adoption of MBIT processes • Large current capacity • Low collector-to-emitter saturation voltage • High-speed switching • Ultrasmall package permitting applied sets to be small and slim (mounting height : 0.85mm) • High allowable power dissipation Applicaitons • Relay drivers

DC / DC Converter Applications

Bipolar Transistor, (-)30V, (-)3A, Low VCE(sat), (PNP)NPN Single MCPH3

DC / DC Converter Applications

文件：49.41 Kbytes Page：5 Pages

封装/外壳：SC-70，SOT-323 包装：散装 描述：TRANS NPN 30V 3A 3MCPH 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

NPN Epitaxial Planar Silicon Transistor DC / DC Converter Applications

封装/外壳：SC-70，SOT-323 包装：散装 描述：TRANS NPN 50V 2A 3MCPH 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个