DC / DC Converter Applications

DC / DC Converter Applications Features • Adoption of MBIT processes. • High current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. • Ultrasmall package facilitates miniaturization in end products (mounting height : 0.85mm). • High allowable power dissip

Bipolar Transistor (-)30V, (-)3A, Low VCE(sat), (PNP)NPN Single MCPH3

Features • Adoption of MBIT processes • Large current capacity • Low collector-to-emitter saturation voltage • High-speed switching • Ultrasmall package facilitates miniaturization in end products (mounting height : 0.85mm) • High allowable power dissipation Applicaitons • Relay drivers, l

Bipolar Transistor, (-)30V, (-)3A, Low VCE(sat), (PNP)NPN Single MCPH3

MCH3109/MCH3209 is Bipolar Transistor, (-)30V, (-)3A, Low VCE(sat), (PNP)NPN Single MCPH3 for DC-DC Converter Applications. • Adoption of MBIT processes\n• Large current capacity\n• Low collector-to-emitter saturation voltage\n• High-speed switching\n• Ultrasmall package facilitates miniaturization in end products (mounting height : 0.85mm)\n• High allowable power dissipation;

DC / DC Converter Applications

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Bipolar Transistor (-)30V, (-)3A, Low VCE(sat), (PNP)NPN Single MCPH3

Features • Adoption of MBIT processes • Large current capacity • Low collector-to-emitter saturation voltage • High-speed switching • Ultrasmall package facilitates miniaturization in end products (mounting height : 0.85mm) • High allowable power dissipation Applicaitons • Relay drivers, l

封装/外壳：SC-70，SOT-323 包装：散装 描述：TRANS NPN 30V 3A 3MCPH 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

MICROPOWER, ULTRA-SENSITIVE HALL-EFFECT SWITCHES

MICROPOWER, ULTRA-SENSITIVE HALL-EFFECT SWITCHES The A3209Ex and A3210Ex integrated circuits are ultra-sensitive, pole independent Hall-effect switches with a latched digital output. They are especially suited for operation in battery-operated, hand-held equipment such as cellular and cordles

DC/DC Converter Applications

DC/DC Converter Applications Features • Adoption of MBIT processes. • Large current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. • Ultrasmall package facilitates miniaturization in end products (mounting height : 0.9mm). • High allowable power dissipat

NPN Epitaxial Silicon Transistor

Switching Application (Bias Resistor Built In) • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R=4.7KΩ) • Complement to FJNS4209R

TOPFET high side switch

DESCRIPTION Monolithic single channel high side protected power switch in TOPFET2 technology assembled in a 5 pin plastic surface mount package. FEATURES ● Vertical power TrenchMOS ● Low on-state resistance ● CMOS logic compatible ● Very low quiescent current ● Overtemperature protection ●