PROPORTIONAL CONTROL SOLID STATE RELAYS

Features • Microcontroller based burst fire control SSR • Ratings from 25 A to 90 A @ 48-530 VAC • Low-voltage, current, or potentiometer control • Output status indicator • Separate output enable / disable control • Two time-base periods available • For use with a wide range of resistive l

封装/外壳：Hockey Puck 包装：散装 描述：SSR RELAY SPST-NO 25A 180-280V 继电器 固态继电器

封装/外壳：Hockey Puck 包装：散装 描述：SSR RELAY SPST-NO 25A 180-280V 继电器 固态继电器

SPEECH NETWORK WITH DIALER INTERFACE

INTRODUCTION The KA2425A is telephone speech network integrated circuit which includes transmit amp, receive amp, side tone amp, DC loop interface function, DTMF input, voltage regulator for speech, a regulated output voltage for a dialer, and equalization circuit . FEATURES • Low voltage opera

SPEECH NETWORK WITH DIALER INTERFACE

INTRODUCTION The KA2425A is telephone speech network integrated circuit which includes transmit amp, receive amp, side tone amp, DC loop interface function, DTMF input, voltage regulator for speech, a regulated output voltage for a dialer, and equalization circuit . FEATURES • Low voltage opera

4-PORT TRANSFER SWITCH

Product Description The RF2425 is a very low-cost single-throw, double-pole GaAs MESFET switch. There are two bidirectional input/output channels which can be turned off or on by a single logic control line. Two of the ports may be tied together externally to make a transmit/receive switch. The d

N-Channel Enhancement-Mode Vertical DMOS FETs

Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertexs well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the

N-Channel Enhancement-Mode Vertical DMOS FETs

Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertexs well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the