OPTICALLY COUPLED ISOLATOR PHOTODARLINGTON OUTPUT

DESCRIPTION The MCA230, MCA231, MCA255 series of optically coupled isolators consist of an infrared light emitting diode and NPN silicon photodarlington in a space efficient dual in line plastic package. FEATURES ● Options :- 10mm lead spread - add G after part no. Surface mount - add

Optocoupler, Photodarlington Output, High Gain, with Base Connection

DESCRIPTION The MCA230/MCA231/MCA255 are industry standard optocouplers, consisting of a gallium arsenide infrared LED and a silicon photodarlington. These optocouplers are constructed with a high voltage insulation packaging process which offers 7.5 kV withstand test capability. FEATURES • Iso

PHOTODARLINGTON OPTOCOUPLER

DESCRIPTION The MCA230/231/255 are industry standard optocouplers, consisting of a Gallium Arsenide infrared LED and a silicon phototdarlington. These optocouplers are constructed with a high voltage insu lation, double molded packaging process which offers 7.5 KV withstand test capability. FEAT

55 V, photodarlington optocoupler

MCA255 Darlington Output 6 Pin, Single

OPTICALLY COUPLED ISOLATOR PHOTODARLINGTON OUTPUT

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OPTICALLY COUPLED ISOLATOR PHOTODARLINGTON OUTPUT

DESCRIPTION The MCA230, MCA231, MCA255 series of optically coupled isolators consist of an infrared light emitting diode and NPN silicon photodarlington in a space efficient dual in line plastic package. FEATURES ● Options :- 10mm lead spread - add G after part no. Surface mount - add

OPTICALLY COUPLED ISOLATOR PHOTODARLINGTON OUTPUT

文件：724.09 Kbytes Page：3 Pages

PNP video transistors

DESCRIPTION PNP video transistor in a SOT128B (TO-202) plastic package. NPN complements: BFQ235 and BFQ235A. FEATURES • High breakdown voltages • Low output capacitance • High gain bandwidth • Good thermal stability • Gold metallization ensures excellent reliability.

MEDIUM CURRENT PLASTIC RECTIFIER(VOLTAGE - 200 to 1300 Volts CURRENT - 3.0 Amperes)

FEATURES ● Exce High surge current capability ● Plastic package has Underwriters Laboratory Flammability Classification 94V-O ● Low leakage ● Void-free molded in DO-201AD plastic package ● High current operation of 3 Amperes at TA=95 ¢J with no thermal runaway ● eds environmental standards o

N-CHANNEL BROADBAND RF POWER FET

The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode Designed for broadband commercial and industrial applications at frequencies to 54 MHz. The high gain, broadband performance and linear characterization of this device makes it ideal for large–signal, common source a

RF Power Field-Effect Transistor

The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode

Silicon NPN Transistor Horizontal Driver, Amp

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