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MC74VHC价格
参考价格：￥0.4038
型号：MC74VHC00DR2G 品牌：ONSemi 备注：这里有MC74VHC多少钱，2025年最近7天走势，今日出价，今日竞价，MC74VHC批发/采购报价，MC74VHC行情走势销售排行榜，MC74VHC报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
Quad 2-Input NAND Gate The MC74VHC00 is an advanced high speed CMOS 2–input NAND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffe | Motorola 摩托罗拉 |   | ||
Quad 2?묲nput NAND Gate The MC74VHC00 is an advanced high speed CMOS 2−input NAND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffe | ONSEMI 安森美半导体 | | ||
Quad 2-Input NAND Gate The MC74VHC00 is an advanced high speed CMOS 2–input NAND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffe | Motorola 摩托罗拉 | | ||
Quad 2?묲nput NAND Gate The MC74VHC00 is an advanced high speed CMOS 2−input NAND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffe | ONSEMI 安森美半导体 | | ||
Quad 2?묲nput NAND Gate The MC74VHC00 is an advanced high speed CMOS 2−input NAND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffe | ONSEMI 安森美半导体 | | ||
Quad 2-Input NAND Gate The MC74VHC00 is an advanced high speed CMOS 2–input NAND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffe | Motorola 摩托罗拉 | | ||
Quad 2?묲nput NAND Gate The MC74VHC00 is an advanced high speed CMOS 2−input NAND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffe | ONSEMI 安森美半导体 | | ||
Quad 2?묲nput NAND Gate The MC74VHC00 is an advanced high speed CMOS 2−input NAND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffe | ONSEMI 安森美半导体 | | ||
Quad 2?묲nput NAND Gate The MC74VHC00 is an advanced high speed CMOS 2−input NAND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffe | ONSEMI 安森美半导体 | | ||
Quad 2?묲nput NAND Gate The MC74VHC00 is an advanced high speed CMOS 2−input NAND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffe | ONSEMI 安森美半导体 | | ||
Quad 2-Input NAND Gate The MC74VHC00 is an advanced high speed CMOS 2–input NAND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffe | Motorola 摩托罗拉 | | ||
Quad 2?묲nput NAND Gate The MC74VHC00 is an advanced high speed CMOS 2−input NAND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffe | ONSEMI 安森美半导体 | | ||
Quad 2?묲nput NAND Gate The MC74VHC00 is an advanced high speed CMOS 2−input NAND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffe | ONSEMI 安森美半导体 | | ||
Quad 2?묲nput NOR Gate The MC74VHC02 is an advanced high speed CMOS 2−input NOR gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffe | ONSEMI 安森美半导体 | | ||
Quad 2-Input NOR Gate The MC74VHC02 is an advanced high speed CMOS 2–input NOR gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffe | Motorola 摩托罗拉 | | ||
Quad 2-Input NOR Gate The MC74VHC02 is an advanced high speed CMOS 2–input NOR gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffe | Motorola 摩托罗拉 | | ||
Quad 2?묲nput NOR Gate The MC74VHC02 is an advanced high speed CMOS 2−input NOR gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffe | ONSEMI 安森美半导体 | | ||
Quad 2?묲nput NOR Gate The MC74VHC02 is an advanced high speed CMOS 2−input NOR gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffe | ONSEMI 安森美半导体 | | ||
Quad 2-Input NOR Gate The MC74VHC02 is an advanced high speed CMOS 2–input NOR gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffe | Motorola 摩托罗拉 | | ||
Quad 2?묲nput NOR Gate The MC74VHC02 is an advanced high speed CMOS 2−input NOR gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffe | ONSEMI 安森美半导体 | | ||
Quad 2?묲nput NOR Gate The MC74VHC02 is an advanced high speed CMOS 2−input NOR gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffe | ONSEMI 安森美半导体 | | ||
Quad 2-Input NOR Gate The MC74VHC02 is an advanced high speed CMOS 2–input NOR gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffe | Motorola 摩托罗拉 | | ||
Hex Inverter Hex Inverter The MC74VHC04 is an advanced high speed CMOS inverter fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a | Motorola 摩托罗拉 | | ||
Hex Inverter Hex Inverter The MC74VHC04 is an advanced high speed CMOS inverter fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a | ONSEMI 安森美半导体 | | ||
Hex Inverter The MC74VHC04 is an advanced high speed CMOS inverter fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffer ou | ONSEMI 安森美半导体 | | ||
Hex Inverter The MC74VHC04 is an advanced high speed CMOS inverter fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffer ou | ONSEMI 安森美半导体 | | ||
Hex Inverter Hex Inverter The MC74VHC04 is an advanced high speed CMOS inverter fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a | Motorola 摩托罗拉 | | ||
Hex Inverter Hex Inverter The MC74VHC04 is an advanced high speed CMOS inverter fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a | ONSEMI 安森美半导体 | | ||
Hex Inverter The MC74VHC04 is an advanced high speed CMOS inverter fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffer ou | ONSEMI 安森美半导体 | | ||
Hex Inverter Hex Inverter The MC74VHC04 is an advanced high speed CMOS inverter fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a | Motorola 摩托罗拉 | | ||
Hex Inverter The MC74VHC04 is an advanced high speed CMOS inverter fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffer ou | ONSEMI 安森美半导体 | | ||
Hex Inverter Hex Inverter The MC74VHC04 is an advanced high speed CMOS inverter fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a | Motorola 摩托罗拉 | | ||
Quad 2?묲nput AND Gate Quad 2−Input AND Gate The MC74VHC08 is an advanced high speed CMOS 2−input AND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. The internal circuit is composed of th | ONSEMI 安森美半导体 | | ||
Quad 2-Input AND Gate Quad 2-Input AND Gate The MC74VHC08 is an advanced high speed CMOS 2–input AND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. The internal circuit is composed of th | Motorola 摩托罗拉 | | ||
Quad 2-Input AND Gate Quad 2-Input AND Gate The MC74VHC08 is an advanced high speed CMOS 2–input AND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. The internal circuit is composed of th | Motorola 摩托罗拉 | | ||
Quad 2?묲nput AND Gate Quad 2−Input AND Gate The MC74VHC08 is an advanced high speed CMOS 2−input AND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. The internal circuit is composed of th | ONSEMI 安森美半导体 | | ||
Quad 2?묲nput AND Gate Quad 2−Input AND Gate The MC74VHC08 is an advanced high speed CMOS 2−input AND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. The internal circuit is composed of th | ONSEMI 安森美半导体 | | ||
Quad 2-Input AND Gate Quad 2-Input AND Gate The MC74VHC08 is an advanced high speed CMOS 2–input AND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. The internal circuit is composed of th | Motorola 摩托罗拉 | | ||
Quad 2?묲nput AND Gate Quad 2−Input AND Gate The MC74VHC08 is an advanced high speed CMOS 2−input AND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. The internal circuit is composed of th | ONSEMI 安森美半导体 | | ||
Quad 2?묲nput AND Gate Quad 2−Input AND Gate The MC74VHC08 is an advanced high speed CMOS 2−input AND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. The internal circuit is composed of th | ONSEMI 安森美半导体 | | ||
Quad 2-Input AND Gate Quad 2-Input AND Gate The MC74VHC08 is an advanced high speed CMOS 2–input AND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. The internal circuit is composed of th | Motorola 摩托罗拉 | | ||
Quad 2?묲nput AND Gate Quad 2−Input AND Gate The MC74VHC08 is an advanced high speed CMOS 2−input AND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. The internal circuit is composed of th | ONSEMI 安森美半导体 | | ||
Quad 2?묲nput AND Gate Quad 2−Input AND Gate The MC74VHC08 is an advanced high speed CMOS 2−input AND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. The internal circuit is composed of th | ONSEMI 安森美半导体 | | ||
Quad Bus Buffer The MC74VHC125 is a high speed CMOS quad bus buffer fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. Features • High Speed: tPD = 3.8ns (Typ) at VCC = 5 V • Low Power Dissipati | ONSEMI 安森美半导体 | | ||
Quad Bus Buffer The MC74VHC125 is a high speed CMOS quad bus buffer fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. Features • High Speed: tPD = 3.8ns (Typ) at VCC = 5 V • Low Power Dissipati | ONSEMI 安森美半导体 | | ||
Quad Bus Buffer The MC74VHC125 is a high speed CMOS quad bus buffer fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. Features • High Speed: tPD = 3.8ns (Typ) at VCC = 5 V • Low Power Dissipati | ONSEMI 安森美半导体 | | ||
Quad Bus Buffer The MC74VHC125 is a high speed CMOS quad bus buffer fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. Features • High Speed: tPD = 3.8ns (Typ) at VCC = 5 V • Low Power Dissipati | ONSEMI 安森美半导体 | | ||
Quad Bus Buffer The MC74VHC126 is a high speed CMOS quad bus buffer fabricated with silicon gate CMOS technology. It achieves noninverting high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. • High Speed: tPD = 3.8 ns (Typ) at VCC = 5.0 V • Low Powe | ONSEMI 安森美半导体 | | ||
Quad Bus Buffer The MC74VHC126 is a high speed CMOS quad bus buffer fabricated with silicon gate CMOS technology. It achieves noninverting high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. • High Speed: tPD = 3.8 ns (Typ) at VCC = 5.0 V • Low Powe | ONSEMI 安森美半导体 | | ||
Quad Bus Buffer The MC74VHC126 is a high speed CMOS quad bus buffer fabricated with silicon gate CMOS technology. It achieves noninverting high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. • High Speed: tPD = 3.8 ns (Typ) at VCC = 5.0 V • Low Powe | ONSEMI 安森美半导体 | | ||
Quad Bus Buffer The MC74VHC126 is a high speed CMOS quad bus buffer fabricated with silicon gate CMOS technology. It achieves noninverting high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. • High Speed: tPD = 3.8 ns (Typ) at VCC = 5.0 V • Low Powe | ONSEMI 安森美半导体 | | ||
Quad 2?묲nput NAND Schmitt Trigger The MC74VHC132 is an advanced high speed CMOS Schmitt NAND trigger fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. Features • High Speed: tPD = 4.9 ns (Typ) at VCC = 5.0 V | ONSEMI 安森美半导体 | | ||
Quad 2-Input NAND Schmitt Trigger The MC74VHC132 is an advanced high speed CMOS Schmitt NAND trigger fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. • High Speed: tPD = 4.9ns (Typ) at VCC = 5V • Low Power | Motorola 摩托罗拉 | | ||
Quad 2-Input NAND Schmitt Trigger The MC74VHC132 is an advanced high speed CMOS Schmitt NAND trigger fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. • High Speed: tPD = 4.9ns (Typ) at VCC = 5V • Low Power | Motorola 摩托罗拉 | | ||
Quad 2?묲nput NAND Schmitt Trigger The MC74VHC132 is an advanced high speed CMOS Schmitt NAND trigger fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. Features • High Speed: tPD = 4.9 ns (Typ) at VCC = 5.0 V | ONSEMI 安森美半导体 | | ||
Quad 2?묲nput NAND Schmitt Trigger The MC74VHC132 is an advanced high speed CMOS Schmitt NAND trigger fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. Features • High Speed: tPD = 4.9 ns (Typ) at VCC = 5.0 V | ONSEMI 安森美半导体 | | ||
Quad 2?묲nput NAND Schmitt Trigger The MC74VHC132 is an advanced high speed CMOS Schmitt NAND trigger fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. Features • High Speed: tPD = 4.9 ns (Typ) at VCC = 5.0 V | ONSEMI 安森美半导体 | | ||
Quad 2?묲nput NAND Schmitt Trigger The MC74VHC132 is an advanced high speed CMOS Schmitt NAND trigger fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. Features • High Speed: tPD = 4.9 ns (Typ) at VCC = 5.0 V | ONSEMI 安森美半导体 | | ||
Quad 2-Input NAND Schmitt Trigger The MC74VHC132 is an advanced high speed CMOS Schmitt NAND trigger fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. • High Speed: tPD = 4.9ns (Typ) at VCC = 5V • Low Power | Motorola 摩托罗拉 | | ||
Quad 2?묲nput NAND Schmitt Trigger The MC74VHC132 is an advanced high speed CMOS Schmitt NAND trigger fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. Features • High Speed: tPD = 4.9 ns (Typ) at VCC = 5.0 V | ONSEMI 安森美半导体 | |
MC74VHC产品属性
- 类型
描述
- 型号
MC74VHC
- 制造商
Rochester Electronics LLC
- 功能描述
- Bulk
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON(安森美) |
2511 |
4560 |
电子元器件采购降本 30%!公司原厂直采,砍掉中间差价 |
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ON/安森美 |
2450+ |
SOP |
8850 |
只做原装正品假一赔十为客户做到零风险!! |
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onsemi |
25+ |
原厂封装 |
10000 |
||||
ON(安森美) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
ON(安森美) |
23+ |
14841 |
公司只做原装正品,假一赔十 |
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ON |
2016+ |
SOP |
3000 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
ONSEMI/安森美 |
2135+ |
SOP14 |
5000 |
原装现货 |
|||
MOTOLORA |
2025+ |
SOP14 |
4816 |
全新原厂原装产品、公司现货销售 |
|||
ON |
24+ |
TSSOP |
6980 |
原装现货,可开13%税票 |
|||
ON |
NEW |
SOP |
9562 |
代理全系列销售, 全新原装正品,价格优势,长期供应,量大可订 |
MC74VHC规格书下载地址
MC74VHC参数引脚图相关
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- MC74LVX74DTG
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- MC7400
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- MC72000
- MC71000
- MC7010
- MC700
- MC699
- MC697
- MC696
- MC693
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- P104
- P105
- P106
- P107
